Cypress Semiconductor Corp CY7C2665KV18-550BZI
- Part Number:
- CY7C2665KV18-550BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3229218-CY7C2665KV18-550BZI
- Description:
- IC SRAM 144MBIT 550MHZ 165FBGA
- Datasheet:
- CY7C2665KV18-550BZI
Cypress Semiconductor Corp CY7C2665KV18-550BZI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C2665KV18-550BZI.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case165-LBGA
- Number of Pins165
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2003
- JESD-609 Codee0
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations165
- Terminal FinishTin/Lead/Silver (Sn/Pb/Ag)
- Additional FeaturePIPELINED ARCHITECTURE
- TechnologySRAM - Synchronous, QDR II
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)220
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberCY7C2665
- Pin Count165
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.9V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size144Mb 4M x 36
- Number of Ports2
- Nominal Supply Current1.52A
- Memory TypeVolatile
- Clock Frequency550MHz
- Access Time450 ps
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization4MX36
- Output Characteristics3-STATE
- Memory Width36
- Address Bus Width20b
- Density144 Mb
- Standby Current-Max0.5A
- I/O TypeSEPARATE
- Sync/AsyncSynchronous
- Word Size36b
- Standby Voltage-Min1.7V
- Height Seated (Max)1.4mm
- Length17mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
CY7C2665KV18-550BZI Overview
The product being described is a high-performance integrated circuit with a published date of 2003. It has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand exposure to moisture for up to 168 hours without any damage. With 165 terminations, this product offers a high level of connectivity. Its additional feature, PIPELINED ARCHITECTURE, allows for efficient data processing. The peak reflow temperature for this product is 220 degrees Celsius. It boasts a single function and a density of 144 Mb, making it a powerful and versatile option. The I/O type is SEPARATE, providing flexibility in terms of input and output connections. With a word size of 36b and a length of 17mm, this product offers a compact yet powerful solution for various applications.
CY7C2665KV18-550BZI Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: SEPARATE
CY7C2665KV18-550BZI Applications
There are a lot of Cypress Semiconductor Corp
CY7C2665KV18-550BZI Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The product being described is a high-performance integrated circuit with a published date of 2003. It has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand exposure to moisture for up to 168 hours without any damage. With 165 terminations, this product offers a high level of connectivity. Its additional feature, PIPELINED ARCHITECTURE, allows for efficient data processing. The peak reflow temperature for this product is 220 degrees Celsius. It boasts a single function and a density of 144 Mb, making it a powerful and versatile option. The I/O type is SEPARATE, providing flexibility in terms of input and output connections. With a word size of 36b and a length of 17mm, this product offers a compact yet powerful solution for various applications.
CY7C2665KV18-550BZI Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: SEPARATE
CY7C2665KV18-550BZI Applications
There are a lot of Cypress Semiconductor Corp
CY7C2665KV18-550BZI Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
CY7C2665KV18-550BZI More Descriptions
CY7C2665KV18 Series 144-Mbit (4M x 36) 1.8 V 0.45 ns QDR® II SRAM FBGA-165
SRAM Chip Sync Dual 1.8V 144M-Bit 4M x 36 0.45ns 165-Pin FBGA Tray
Qdr Ii Plus Sram, 4Mx36, 0.45Ns, Cmos, Pbga165 |Cypress Infineon Technologies CY7C2665KV18-550BZI
IC SRAM 144MBIT PARALLEL 165FBGA
SRAM 144Mb (4Mx36) QDR II QDR II SRAM
SRAM Chip Sync Dual 1.8V 144M-Bit 4M x 36 0.45ns 165-Pin FBGA Tray
Qdr Ii Plus Sram, 4Mx36, 0.45Ns, Cmos, Pbga165 |Cypress Infineon Technologies CY7C2665KV18-550BZI
IC SRAM 144MBIT PARALLEL 165FBGA
SRAM 144Mb (4Mx36) QDR II QDR II SRAM
The three parts on the right have similar specifications to CY7C2665KV18-550BZI.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxI/O TypeSync/AsyncWord SizeStandby Voltage-MinHeight Seated (Max)LengthRadiation HardeningRoHS StatusLead FreeECCN CodeReach Compliance CodeQualification StatusPower SuppliesWrite Cycle Time - Word, PageSurface MountHTS CodeJESD-30 CodeSupply Current-MaxMemory DensityAccess Time (Max)WidthView Compare
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CY7C2665KV18-550BZI13 WeeksSurface MountSurface Mount165-LBGA165-40°C~85°C TATray2003e0Active3 (168 Hours)165Tin/Lead/Silver (Sn/Pb/Ag)PIPELINED ARCHITECTURESRAM - Synchronous, QDR II1.7V~1.9VBOTTOM22011.8V1mm30CY7C26651651.8V1.9V1.7V144Mb 4M x 3621.52AVolatile550MHz450 psSRAMParallel4MX363-STATE3620b144 Mb0.5ASEPARATESynchronous36b1.7V1.4mm17mmNoNon-RoHS Compliant--------------
-
-Surface MountSurface Mount172-LFBGA1720°C~70°C TATray2003e1Obsolete3 (168 Hours)172Tin/Silver/Copper (Sn/Ag/Cu)PIPELINED ARCHITECTURESRAM - Dual Port, Synchronous3.135V~3.465VBOTTOM26013.3V1mm40CY7C08511723.3V3.465V3.135V2Mb 64K x 362300mAVolatile167MHz4 nsSRAMParallel64KX363-STATE3632b2 Mb0.075ACOMMONSynchronous36b3.14V-15mmNoROHS3 CompliantLead Free------------
-
-Surface MountSurface Mount84-LCC (J-Lead)84-40°C~85°C TATube2004e3Obsolete3 (168 Hours)84Matte Tin (Sn)-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V-20CY7C024845V--64Kb 4K x 162290mAVolatile--SRAMParallel4KX163-STATE1612b64 kb0.015ACOMMONAsynchronous16b-5.08mm--ROHS3 Compliant-EAR99unknownNot Qualified5V25ns-------
-
--Surface Mount100-LQFP-0°C~70°C TATray2004e3Obsolete3 (168 Hours)100Matte Tin (Sn)-SRAM - Dual Port, Asynchronous3V~3.6VQUAD26013.3V0.5mm20CY7C038100-3.6V3V1.152Mb 64K x 182-Volatile--SRAMParallel64KX183-STATE18--0.00005ACOMMON--2V1.6mm14mm-ROHS3 CompliantLead Free3A991.B.2.AunknownNot Qualified3.3V15nsYES8542.32.00.41S-PQFP-G1000.185mA1179648 bit15 ns14mm
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