Cypress Semiconductor Corp CY7C199CN-25PXC
- Part Number:
- CY7C199CN-25PXC
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3240141-CY7C199CN-25PXC
- Description:
- IC SRAM 256KBIT 25NS 28DIP
- Datasheet:
- CY7C199CN
Cypress Semiconductor Corp CY7C199CN-25PXC technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C199CN-25PXC.
- Mounting TypeThrough Hole
- Package / Case28-DIP (0.300, 7.62mm)
- Surface MountNO
- Operating Temperature0°C~70°C TA
- PackagingTube
- Published2003
- JESD-609 Codee4
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations28
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage5V
- Terminal Pitch2.54mm
- Reach Compliance Codeunknown
- Frequency25GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCY7C199
- Pin Count28
- JESD-30 CodeR-PDIP-T28
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)5.5V
- Power Supplies5V
- Supply Voltage-Min (Vsup)4.5V
- Memory Size256Kb 32K x 8
- Memory TypeVolatile
- Supply Current-Max0.075mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization32KX8
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page25ns
- Standby Current-Max0.0005A
- Memory Density262144 bit
- Access Time (Max)25 ns
- I/O TypeCOMMON
- Standby Voltage-Min4.5V
- Height Seated (Max)4.82mm
- Length34.67mm
- Width7.62mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CY7C199CN-25PXC Overview
This product is a 28-DIP (0.300, 7.62mm) package with a tube packaging, published in 2003. It utilizes SRAM - Asynchronous technology and has a pin count of 28. The memory size is 256Kb 32K x 8 and has a write cycle time of 25ns for both word and page. With a memory density of 262144 bit, it has a maximum access time of 25ns. The standby voltage-min is 4.5V. This product is designed to provide high-speed and reliable data storage for various electronic devices. Its compact size and efficient performance make it suitable for a wide range of applications in the technology industry.
CY7C199CN-25PXC Features
Package / Case: 28-DIP (0.300, 7.62mm)
I/O Type: COMMON
Freguency at 25GHz
25GHz terminals
CY7C199CN-25PXC Applications
There are a lot of Cypress Semiconductor Corp
CY7C199CN-25PXC Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
This product is a 28-DIP (0.300, 7.62mm) package with a tube packaging, published in 2003. It utilizes SRAM - Asynchronous technology and has a pin count of 28. The memory size is 256Kb 32K x 8 and has a write cycle time of 25ns for both word and page. With a memory density of 262144 bit, it has a maximum access time of 25ns. The standby voltage-min is 4.5V. This product is designed to provide high-speed and reliable data storage for various electronic devices. Its compact size and efficient performance make it suitable for a wide range of applications in the technology industry.
CY7C199CN-25PXC Features
Package / Case: 28-DIP (0.300, 7.62mm)
I/O Type: COMMON
Freguency at 25GHz
25GHz terminals
CY7C199CN-25PXC Applications
There are a lot of Cypress Semiconductor Corp
CY7C199CN-25PXC Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
CY7C199CN-25PXC More Descriptions
IC SRAM 256KBIT PARALLEL 28DIP
The three parts on the right have similar specifications to CY7C199CN-25PXC.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityAccess Time (Max)I/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusLead FreeMountNumber of PinsOperating Supply VoltageNumber of PortsNominal Supply CurrentAddress Bus WidthDensitySync/AsyncWord SizeFactory Lead TimePbfree CodeAdditional FeatureRadiation HardeningView Compare
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CY7C199CN-25PXCThrough Hole28-DIP (0.300, 7.62mm)NO0°C~70°C TATube2003e4Obsolete1 (Unlimited)28EAR99Nickel/Palladium/Gold (Ni/Pd/Au)8542.32.00.41SRAM - Asynchronous4.5V~5.5VDUALNOT SPECIFIED15V2.54mmunknown25GHzNOT SPECIFIEDCY7C19928R-PDIP-T28Not Qualified5.5V5V4.5V256Kb 32K x 8Volatile0.075mASRAMParallel32KX83-STATE825ns0.0005A262144 bit25 nsCOMMON4.5V4.82mm34.67mm7.62mmROHS3 CompliantLead Free--------------
-
Surface Mount84-LCC (J-Lead)--40°C~85°C TATube2004e3Obsolete3 (168 Hours)84EAR99Matte Tin (Sn)-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V-unknown-20CY7C02484-Not Qualified-5V-64Kb 4K x 16Volatile-SRAMParallel4KX163-STATE1625ns0.015A--COMMON-5.08mm--ROHS3 Compliant-Surface Mount845V2290mA12b64 kbAsynchronous16b----
-
Surface Mount144-LQFP-0°C~70°C TATape & Reel (TR)1997e3Obsolete3 (168 Hours)144-Matte Tin (Sn)-SRAM - Dual Port, Asynchronous3V~3.6VQUAD26013.3V0.5mm-15GHz30CY7C057---3.465V-3.135V1.152Mb 32K x 36Volatile-SRAMParallel-3-STATE3615ns0.00005A-15 nsCOMMON2V1.6mm--ROHS3 CompliantLead FreeSurface Mount1443.3V2360mA30b1.1 MbAsynchronous36b8 WeeksyesAUTOMATIC POWER-DOWNNo
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Surface Mount100-LQFPYES0°C~70°C TATray2004e3Obsolete3 (168 Hours)1003A991.B.2.AMatte Tin (Sn)8542.32.00.41SRAM - Dual Port, Asynchronous3V~3.6VQUAD26013.3V0.5mmunknown-20CY7C038100S-PQFP-G100Not Qualified3.6V3.3V3V1.152Mb 64K x 18Volatile0.185mASRAMParallel64KX183-STATE1815ns0.00005A1179648 bit15 nsCOMMON2V1.6mm14mm14mmROHS3 CompliantLead Free---2---------
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