Cypress Semiconductor Corp CY7C1612KV18-300BZXI
- Part Number:
- CY7C1612KV18-300BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3237181-CY7C1612KV18-300BZXI
- Description:
- IC SRAM 144MBIT 300MHZ 165FBGA
- Datasheet:
- CY7C1612KV18-300BZXI
Cypress Semiconductor Corp CY7C1612KV18-300BZXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1612KV18-300BZXI.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case165-LBGA
- Number of Pins165
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2003
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations165
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeaturePIPELINED ARCHITECTURE
- TechnologySRAM - Synchronous, QDR II
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)40
- Base Part NumberCY7C1612
- Pin Count165
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.9V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size144Mb 8M x 18
- Number of Ports2
- Nominal Supply Current910mA
- Memory TypeVolatile
- Clock Frequency300MHz
- Access Time450 ps
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization8MX18
- Output Characteristics3-STATE
- Memory Width18
- Address Bus Width22b
- Density144 Mb
- Standby Current-Max0.39A
- I/O TypeSEPARATE
- Sync/AsyncSynchronous
- Word Size18b
- Standby Voltage-Min1.7V
- Height Seated (Max)1.4mm
- Length17mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
CY7C1612KV18-300BZXI Overview
The product is currently in an active status and uses SRAM technology, specifically QDR II. The voltage supply for this product ranges from 1.7V to 1.9V, with a terminal position located at the bottom. The supply voltage is specifically 1.8V. This product is classified as volatile memory, with a memory format of SRAM and a parallel memory interface. The I/O type is separate and the product operates synchronously.
CY7C1612KV18-300BZXI Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: SEPARATE
CY7C1612KV18-300BZXI Applications
There are a lot of Cypress Semiconductor Corp CY7C1612KV18-300BZXI Memory applications.
cell phones
hard disk drive (HDD)
workstations,
servers
eSRAM
multimedia computers
Cache memory
networks
telecommunications
graphics card
The product is currently in an active status and uses SRAM technology, specifically QDR II. The voltage supply for this product ranges from 1.7V to 1.9V, with a terminal position located at the bottom. The supply voltage is specifically 1.8V. This product is classified as volatile memory, with a memory format of SRAM and a parallel memory interface. The I/O type is separate and the product operates synchronously.
CY7C1612KV18-300BZXI Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: SEPARATE
CY7C1612KV18-300BZXI Applications
There are a lot of Cypress Semiconductor Corp CY7C1612KV18-300BZXI Memory applications.
cell phones
hard disk drive (HDD)
workstations,
servers
eSRAM
multimedia computers
Cache memory
networks
telecommunications
graphics card
CY7C1612KV18-300BZXI More Descriptions
SRAM - Synchronous, QDR II Memory IC 144Mb (8M x 18) Parallel 300 MHz 165-FBGA (15x17)
Synchronous SRAM, QDR-II, 147456 Kb Density, 300 MHz Frequency, BGA-165, RoHSCypress Semiconductor SCT
SRAM Chip Sync Dual 1.8V 144M-bit 8M x 18 0.45ns 165-Pin FBGA Tray
Synchronous SRAM, QDR-II, 147456 Kb Density, 300 MHz Frequency, BGA-165, RoHSCypress Semiconductor SCT
SRAM Chip Sync Dual 1.8V 144M-bit 8M x 18 0.45ns 165-Pin FBGA Tray
The three parts on the right have similar specifications to CY7C1612KV18-300BZXI.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxI/O TypeSync/AsyncWord SizeStandby Voltage-MinHeight Seated (Max)LengthRadiation HardeningRoHS StatusTime@Peak Reflow Temperature-Max (s)Lead FreeSurface MountECCN CodeHTS CodeReach Compliance CodeJESD-30 CodeQualification StatusPower SuppliesSupply Current-MaxWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)WidthFrequencyOutput EnableView Compare
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CY7C1612KV18-300BZXI13 WeeksSurface MountSurface Mount165-LBGA165-40°C~85°C TATray2003e1Active3 (168 Hours)165Tin/Silver/Copper (Sn/Ag/Cu)PIPELINED ARCHITECTURESRAM - Synchronous, QDR II1.7V~1.9VBOTTOM26011.8V1mm40CY7C16121651.8V1.9V1.7V144Mb 8M x 182910mAVolatile300MHz450 psSRAMParallel8MX183-STATE1822b144 Mb0.39ASEPARATESynchronous18b1.7V1.4mm17mmNoROHS3 Compliant-----------------
-
-Surface MountSurface Mount172-LFBGA1720°C~70°C TATray2003e1Obsolete3 (168 Hours)172Tin/Silver/Copper (Sn/Ag/Cu)PIPELINED ARCHITECTURESRAM - Dual Port, Synchronous3.135V~3.465VBOTTOM26013.3V1mm-CY7C08511723.3V3.465V3.135V2Mb 64K x 362300mAVolatile167MHz4 nsSRAMParallel64KX363-STATE3632b2 Mb0.075ACOMMONSynchronous36b3.14V-15mmNoROHS3 Compliant40Lead Free--------------
-
--Surface Mount100-LQFP-0°C~70°C TATray2004e3Obsolete3 (168 Hours)100Matte Tin (Sn)-SRAM - Dual Port, Asynchronous3V~3.6VQUAD26013.3V0.5mm-CY7C038100-3.6V3V1.152Mb 64K x 182-Volatile--SRAMParallel64KX183-STATE18--0.00005ACOMMON--2V1.6mm14mm-ROHS3 Compliant20Lead FreeYES3A991.B.2.A8542.32.00.41unknownS-PQFP-G100Not Qualified3.3V0.185mA15ns1179648 bit15 ns14mm--
-
-Surface MountSurface Mount100-LQFP1000°C~70°C TATray2001e0Obsolete3 (168 Hours)100TIN LEADINTERRUPT FLAGSRAM - Dual Port, Asynchronous4.5V~5.5VQUAD24015V0.5mm-CY7C02511005V--144Kb 8K x 182300mAVolatile--SRAMParallel8KX183-STATE1813b144 kb0.015ACOMMONAsynchronous18b2V1.6mm14mm-Non-RoHS Compliant30Contains Lead-EAR99-not_compliant-Not Qualified5V-15ns-15 ns-15GHzYES
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