Cypress Semiconductor Corp CY7C1612KV18-300BZXC
- Part Number:
- CY7C1612KV18-300BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3229166-CY7C1612KV18-300BZXC
- Description:
- IC SRAM 144MBIT 300MHZ 165FBGA
- Datasheet:
- CY7C1612KV18-300BZXC
Cypress Semiconductor Corp CY7C1612KV18-300BZXC technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1612KV18-300BZXC.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case165-LBGA
- Number of Pins165
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2003
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations165
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeaturePIPELINED ARCHITECTURE
- TechnologySRAM - Synchronous, QDR II
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)40
- Base Part NumberCY7C1612
- Pin Count165
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.9V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size144Mb 8M x 18
- Number of Ports2
- Nominal Supply Current910mA
- Memory TypeVolatile
- Clock Frequency300MHz
- Access Time450 ps
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization8MX18
- Memory Width18
- Address Bus Width22b
- Density144 Mb
- Sync/AsyncSynchronous
- Word Size18b
- Height Seated (Max)1.4mm
- Length17mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
CY7C1612KV18-300BZXC Overview
This product is packaged in a tray and has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand exposure to moisture for up to 168 hours. The terminal finish is Tin/Silver/Copper (Sn/Ag/Cu) and the terminal pitch is 1mm. It has a pin count of 165 and a minimum supply voltage of 1.7V. The organization of the memory is 8MX18, with a memory width of 18. The maximum seated height is 1.4mm and it is not radiation hardened.
CY7C1612KV18-300BZXC Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
CY7C1612KV18-300BZXC Applications
There are a lot of Cypress Semiconductor Corp CY7C1612KV18-300BZXC Memory applications.
personal digital assistants
Camcorders
personal computers
nonvolatile BIOS memory
mainframes
multimedia computers
cell phones
eSRAM
eDRAM
data buffer
This product is packaged in a tray and has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand exposure to moisture for up to 168 hours. The terminal finish is Tin/Silver/Copper (Sn/Ag/Cu) and the terminal pitch is 1mm. It has a pin count of 165 and a minimum supply voltage of 1.7V. The organization of the memory is 8MX18, with a memory width of 18. The maximum seated height is 1.4mm and it is not radiation hardened.
CY7C1612KV18-300BZXC Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
CY7C1612KV18-300BZXC Applications
There are a lot of Cypress Semiconductor Corp CY7C1612KV18-300BZXC Memory applications.
personal digital assistants
Camcorders
personal computers
nonvolatile BIOS memory
mainframes
multimedia computers
cell phones
eSRAM
eDRAM
data buffer
CY7C1612KV18-300BZXC More Descriptions
SRAM Chip Sync Dual 1.8V 144M-bit 8M x 18 0.45ns 165-Pin FBGA Tray
IC SRAM 144MBIT PARALLEL 165FBGA
QDR SRAM, 8MX18, 0.45NS PBGA165
IC SRAM 144MBIT PARALLEL 165FBGA
QDR SRAM, 8MX18, 0.45NS PBGA165
The three parts on the right have similar specifications to CY7C1612KV18-300BZXC.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthAddress Bus WidthDensitySync/AsyncWord SizeHeight Seated (Max)LengthRadiation HardeningRoHS StatusSurface MountECCN CodeHTS CodeJESD-30 CodeQualification StatusMemory DensityAccess Time (Max)WidthLead FreeReach Compliance CodeFrequencyTime@Peak Reflow Temperature-Max (s)Power SuppliesOutput CharacteristicsWrite Cycle Time - Word, PageStandby Current-MaxI/O TypeSupply Current-MaxStandby Voltage-MinView Compare
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CY7C1612KV18-300BZXCSurface MountSurface Mount165-LBGA1650°C~70°C TATray2003e1Obsolete3 (168 Hours)165Tin/Silver/Copper (Sn/Ag/Cu)PIPELINED ARCHITECTURESRAM - Synchronous, QDR II1.7V~1.9VBOTTOM26011.8V1mm40CY7C16121651.8V1.9V1.7V144Mb 8M x 182910mAVolatile300MHz450 psSRAMParallel8MX181822b144 MbSynchronous18b1.4mm17mmNoROHS3 Compliant--------------------
-
-Surface Mount176-LQFP--40°C~85°C TATray2003-Obsolete3 (168 Hours)176-PIPELINED ARCHITECTURESRAM - Dual Port, Synchronous3.135V~3.465VQUAD-13.3V0.5mm-CY7C0852176-3.465V3.135V4.5Mb 128K x 36--Volatile133MHz-SRAMParallel128KX3636----1.6mm24mm-ROHS3 CompliantYES3A991.B.2.A8542.32.00.41S-PQFP-G176Not Qualified4718592 bit4.4 ns24mmLead Free----------
-
Surface MountSurface Mount84-LCC (J-Lead)840°C~70°C TATray2004e3Obsolete3 (168 Hours)84Matte Tin (Sn)-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V--CY7C024845V--64Kb 4K x 162230mAVolatile--SRAMParallel4KX161624b64 kbAsynchronous16b5.08mm--ROHS3 Compliant-EAR99--Not Qualified-55 ns-Lead Freeunknown55GHz205V3-STATE55ns0.015ACOMMON--
-
-Surface Mount100-LQFP-0°C~70°C TATray2004e3Obsolete3 (168 Hours)100Matte Tin (Sn)-SRAM - Dual Port, Asynchronous3V~3.6VQUAD26013.3V0.5mm-CY7C038100-3.6V3V1.152Mb 64K x 182-Volatile--SRAMParallel64KX1818----1.6mm14mm-ROHS3 CompliantYES3A991.B.2.A8542.32.00.41S-PQFP-G100Not Qualified1179648 bit15 ns14mmLead Freeunknown-203.3V3-STATE15ns0.00005ACOMMON0.185mA2V
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