Cypress Semiconductor Corp CY7C1321KV18-250BZXCT

Name: CY7C1321KV18-250BZXCT
Brand: Cypress Semiconductor Corp
SKU: 3234433-CY7C1321KV18-250BZXCT
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CY7C1321KV18-250BZXCT

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 3234433-CY7C1321KV18-250BZXCT

Description:: IC SRAM 18MBIT 250MHZ 165FBGA

ECAD Model:

Datasheet:: CY7C1321KV18-250BZXCT

Specifications

Cypress Semiconductor Corp CY7C1321KV18-250BZXCT technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1321KV18-250BZXCT.

Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
165-LBGA
Surface Mount
YES
Number of Pins
165
Operating Temperature
0°C~70°C TA
Packaging
Tape & Reel (TR)
Published
2003
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
165
Technology
SRAM - Synchronous, DDR II
Voltage - Supply
1.7V~1.9V
Terminal Position
BOTTOM
Base Part Number
CY7C1321
Operating Supply Voltage
1.8V
Memory Size
18Mb 512K x 36
Number of Ports
1
Memory Type
Volatile
Clock Frequency
250MHz
Supply Current-Max
0.37mA
Access Time
450 ps
Memory Format
SRAM
Memory Interface
Parallel
Output Characteristics
3-STATE
Memory Width
36
Address Bus Width
19b
Density
18 Mb
Standby Current-Max
0.25A
I/O Type
COMMON
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

CY7C1321KV18-250BZXCT Overview
The CY7C1321 is a high-performance surface mount memory product with a voltage supply range of 1.7V to 1.9V. Its base part number is CY7C1321 and it operates at a supply voltage of 1.8V. With a memory size of 18Mb, this product offers a large storage capacity of 512K x 36. It features a single port and 3-STATE output characteristics, making it suitable for various applications. The memory width of 36 ensures efficient data transfer. With a maximum standby current of 0.25A, this product consumes minimal power. However, it does not offer radiation hardening capabilities. Overall, the CY7C1321 is a reliable and efficient memory solution for various electronic devices.

CY7C1321KV18-250BZXCT Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
I/O Type: COMMON

CY7C1321KV18-250BZXCT Applications
There are a lot of Cypress Semiconductor Corp CY7C1321KV18-250BZXCT Memory applications.

servers
cell phones
DVD disk buffer
supercomputers
eDRAM
main computer memory
eSRAM
networks
graphics card
embedded logic

CY7C1321KV18-250BZXCT More Descriptions

SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA T/R
DDR-II CIO, 18 Mbit Density, BGA-165, RoHSCypress Semiconductor SCT
1.7V~1.9V 18Mbit LBGA-165 SRAM ROHS
IC SRAM 18MBIT PARALLEL 165FBGA
SRAM 18Mb 250Mhz 1.8V DDR-II SRAM

Product Comparison

The three parts on the right have similar specifications to CY7C1321KV18-250BZXCT.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Voltage - Supply

Terminal Position

Base Part Number

Operating Supply Voltage

Memory Size

Number of Ports

Memory Type

Clock Frequency

Supply Current-Max

Access Time

Memory Format

Memory Interface

Output Characteristics

Memory Width

Address Bus Width

Density

Standby Current-Max

I/O Type

Radiation Hardening

RoHS Status

Mount

JESD-609 Code

ECCN Code

Terminal Finish

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Power Supplies

Nominal Supply Current

Organization

Write Cycle Time - Word, Page

Access Time (Max)

Sync/Async

Word Size

Length

Height Seated (Max)

Additional Feature

Frequency

Standby Voltage-Min

Output Enable

Lead Free

View Compare
CY7C1321KV18-250BZXCT

Cypress Semiconductor Corp

13 Weeks

Surface Mount

165-LBGA

YES

165

0°C~70°C TA

Tape & Reel (TR)

2003

Active

3 (168 Hours)

165

SRAM - Synchronous, DDR II

1.7V~1.9V

BOTTOM

CY7C1321

1.8V

18Mb 512K x 36

1

Volatile

250MHz

0.37mA

450 ps

SRAM

Parallel

3-STATE

36

19b

18 Mb

0.25A

COMMON

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
CY7C0241-55AXI

Cypress Semiconductor Corp

-

Surface Mount

100-LQFP

-

100

-40°C~85°C TA

Tray

2004

Obsolete

3 (168 Hours)

100

SRAM - Dual Port, Asynchronous

4.5V~5.5V

QUAD

CY7C0241

5V

72Kb 4K x 18

2

Volatile

-

-

-

SRAM

Parallel

3-STATE

18

24b

72 kb

0.015A

COMMON

-

ROHS3 Compliant

Surface Mount

e3

EAR99

Matte Tin (Sn)

260

1

5V

0.5mm

unknown

20

100

Not Qualified

5V

260mA

4KX18

55ns

55 ns

Asynchronous

18b

14mm

1.6mm

-

-

-

-

-

CY7C1321KV18-250BZXCT vs CY7C0241-55AXI
CY7C024-25JXI

Cypress Semiconductor Corp

-

Surface Mount

84-LCC (J-Lead)

-

84

-40°C~85°C TA

Tube

2004

Obsolete

3 (168 Hours)

84

SRAM - Dual Port, Asynchronous

4.5V~5.5V

QUAD

CY7C024

5V

64Kb 4K x 16

2

Volatile

-

-

-

SRAM

Parallel

3-STATE

16

12b

64 kb

0.015A

COMMON

-

ROHS3 Compliant

Surface Mount

e3

EAR99

Matte Tin (Sn)

260

1

5V

-

unknown

20

84

Not Qualified

5V

290mA

4KX16

25ns

-

Asynchronous

16b

-

5.08mm

-

-

-

-

-

CY7C1321KV18-250BZXCT vs CY7C024-25JXI
CY7C0251-15AC

Cypress Semiconductor Corp

-

Surface Mount

100-LQFP

-

100

0°C~70°C TA

Tray

2001

Obsolete

3 (168 Hours)

100

SRAM - Dual Port, Asynchronous

4.5V~5.5V

QUAD

CY7C0251

5V

144Kb 8K x 18

2

Volatile

-

-

-

SRAM

Parallel

3-STATE

18

13b

144 kb

0.015A

COMMON

-

Non-RoHS Compliant

Surface Mount

e0

EAR99

TIN LEAD

240

1

5V

0.5mm

not_compliant

30

100

Not Qualified

5V

300mA

8KX18

15ns

15 ns

Asynchronous

18b

14mm

1.6mm

INTERRUPT FLAG

15GHz

2V

YES

Contains Lead

CY7C1321KV18-250BZXCT vs CY7C0251-15AC