Cypress Semiconductor Corp CY7C1320KV18-250BZI

Name: CY7C1320KV18-250BZI
Brand: Cypress Semiconductor Corp
SKU: 3228618-CY7C1320KV18-250BZI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CY7C1320KV18-250BZI

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 3228618-CY7C1320KV18-250BZI

Description:: IC SRAM 18MBIT 250MHZ 165FBGA

ECAD Model:

Datasheet:: CY7C1320KV18-250BZI

Specifications

Cypress Semiconductor Corp CY7C1320KV18-250BZI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1320KV18-250BZI.

Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
165-LBGA
Number of Pins
165
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2003
JESD-609 Code
e0
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
165
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
PIPELINED ARCHITECTURE
Technology
SRAM - Synchronous, DDR II
Voltage - Supply
1.7V~1.9V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
235
Number of Functions
1
Supply Voltage
1.8V
Time@Peak Reflow Temperature-Max (s)
20
Base Part Number
CY7C1320
Pin Count
165
Operating Supply Voltage
1.8V
Memory Size
18Mb 512K x 36
Number of Ports
1
Nominal Supply Current
460mA
Memory Type
Volatile
Clock Frequency
250MHz
Access Time
450 ps
Memory Format
SRAM
Memory Interface
Parallel
Output Characteristics
3-STATE
Memory Width
36
Address Bus Width
19b
Density
18 Mb
Standby Current-Max
0.25A
I/O Type
COMMON
Sync/Async
Synchronous
Word Size
36b
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

CY7C1320KV18-250BZI Overview
The JESD-609 Code for the CY7C1320 is e0, indicating that it meets the industry standards for moisture sensitivity. With a Moisture Sensitivity Level (MSL) of 3, this device can withstand exposure to ambient humidity for up to 168 hours before reflow. This particular chip has 165 terminations and 1 function, making it a versatile option for various applications. When it comes to reflow, the CY7C1320 has a maximum time of 20 seconds at peak temperature. As a volatile memory type with a parallel interface, this chip offers fast data access and processing. Additionally, with a single port and a COMMON I/O type, it is suitable for a wide range of memory applications.

CY7C1320KV18-250BZI Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: COMMON

CY7C1320KV18-250BZI Applications
There are a lot of Cypress Semiconductor Corp
CY7C1320KV18-250BZI Memory applications.

servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM

CY7C1320KV18-250BZI More Descriptions

SRAM Chip Sync Single 1.8V 18M-bit 512K x 36 0.45ns 165-Pin FBGA Tray
e0 Surface Mount CY7C1320 Tray ic memory 250MHz 450ps 460mA 18Mb
DDR-II CIO, 18 Mbit Density, BGA-165Cypress Semiconductor SCT
1.7V~1.9V 18Mbit LBGA-165 SRAM ROHS
IC SRAM 18MBIT PARALLEL 165FBGA
SRAM 18Mb 250Mhz 1.8 DDR-II SRAM
DUAL-PORT SRAM, 16KX8, 20NS, CMO

Product Comparison

The three parts on the right have similar specifications to CY7C1320KV18-250BZI.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Operating Supply Voltage

Memory Size

Number of Ports

Nominal Supply Current

Memory Type

Clock Frequency

Access Time

Memory Format

Memory Interface

Output Characteristics

Memory Width

Address Bus Width

Density

Standby Current-Max

I/O Type

Sync/Async

Word Size

Radiation Hardening

RoHS Status

ECCN Code

Reach Compliance Code

Qualification Status

Power Supplies

Organization

Write Cycle Time - Word, Page

Height Seated (Max)

Pbfree Code

Terminal Pitch

Frequency

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Access Time (Max)

Standby Voltage-Min

Lead Free

Surface Mount

HTS Code

JESD-30 Code

Supply Current-Max

Memory Density

Length

Width

View Compare
CY7C1320KV18-250BZI

Cypress Semiconductor Corp

13 Weeks

Surface Mount

Surface Mount

165-LBGA

165

-40°C~85°C TA

Tray

2003

e0

Active

3 (168 Hours)

165

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE

SRAM - Synchronous, DDR II

1.7V~1.9V

BOTTOM

235

1

1.8V

20

CY7C1320

165

1.8V

18Mb 512K x 36

1

460mA

Volatile

250MHz

450 ps

SRAM

Parallel

3-STATE

36

19b

18 Mb

0.25A

COMMON

Synchronous

36b

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
CY7C024-25JXI

Cypress Semiconductor Corp

-

Surface Mount

Surface Mount

84-LCC (J-Lead)

84

-40°C~85°C TA

Tube

2004

e3

Obsolete

3 (168 Hours)

84

Matte Tin (Sn)

-

SRAM - Dual Port, Asynchronous

4.5V~5.5V

QUAD

260

1

5V

20

CY7C024

84

5V

64Kb 4K x 16

2

290mA

Volatile

-

-

SRAM

Parallel

3-STATE

16

12b

64 kb

0.015A

COMMON

Asynchronous

16b

-

ROHS3 Compliant

EAR99

unknown

Not Qualified

5V

4KX16

25ns

5.08mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

CY7C1320KV18-250BZI vs CY7C024-25JXI
CY7C057V-15AXCT

Cypress Semiconductor Corp

8 Weeks

Surface Mount

Surface Mount

144-LQFP

144

0°C~70°C TA

Tape & Reel (TR)

1997

e3

Obsolete

3 (168 Hours)

144

Matte Tin (Sn)

AUTOMATIC POWER-DOWN

SRAM - Dual Port, Asynchronous

3V~3.6V

QUAD

260

1

3.3V

30

CY7C057

-

3.3V

1.152Mb 32K x 36

2

360mA

Volatile

-

-

SRAM

Parallel

3-STATE

36

30b

1.1 Mb

0.00005A

COMMON

Asynchronous

36b

No

ROHS3 Compliant

-

-

-

-

-

15ns

1.6mm

yes

0.5mm

15GHz

3.465V

3.135V

15 ns

2V

Lead Free

-

-

-

-

-

-

-

CY7C1320KV18-250BZI vs CY7C057V-15AXCT
CY7C038V-15AXC

Cypress Semiconductor Corp

-

-

Surface Mount

100-LQFP

-

0°C~70°C TA

Tray

2004

e3

Obsolete

3 (168 Hours)

100

Matte Tin (Sn)

-

SRAM - Dual Port, Asynchronous

3V~3.6V

QUAD

260

1

3.3V

20

CY7C038

100

-

1.152Mb 64K x 18

2

-

Volatile

-

-

SRAM

Parallel

3-STATE

18

-

-

0.00005A

COMMON

-

-

-

ROHS3 Compliant

3A991.B.2.A

unknown

Not Qualified

3.3V

64KX18

15ns

1.6mm

-

0.5mm

-

3.6V

3V

15 ns

2V

Lead Free

YES

8542.32.00.41

S-PQFP-G100

0.185mA

1179648 bit

14mm

14mm

CY7C1320KV18-250BZI vs CY7C038V-15AXC