Cypress Semiconductor Corp CY7C1170KV18-550BZC
- Part Number:
- CY7C1170KV18-550BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3236939-CY7C1170KV18-550BZC
- Description:
- IC SRAM 18MBIT 550MHZ 165FBGA
- Datasheet:
- CY7C1170KV18-550BZC
Cypress Semiconductor Corp CY7C1170KV18-550BZC technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1170KV18-550BZC.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case165-LBGA
- Number of Pins165
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2003
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations165
- TechnologySRAM - Synchronous, DDR II
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Reach Compliance Codenot_compliant
- Base Part NumberCY7C1170
- Qualification StatusNot Qualified
- Operating Supply Voltage1.8V
- Memory Size18Mb 512K x 36
- Number of Ports1
- Nominal Supply Current820mA
- Memory TypeVolatile
- Clock Frequency550MHz
- Access Time450 ps
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width36
- Address Bus Width18b
- Density18 Mb
- Standby Current-Max0.34A
- I/O TypeCOMMON
- Sync/AsyncSynchronous
- Word Size36b
- RoHS StatusNon-RoHS Compliant
CY7C1170KV18-550BZC Overview
This product is a surface mount with a tray packaging, first published in 2003. It has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand up to 168 hours of exposure to moisture. It has 165 terminations and utilizes SRAM technology with synchronous DDR II . The voltage supply for this product is between 1.7V to 1.9V. It has a parallel memory interface with a memory width of 36. The maximum standby current for this product is 0.34A.
CY7C1170KV18-550BZC Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
I/O Type: COMMON
CY7C1170KV18-550BZC Applications
There are a lot of Cypress Semiconductor Corp
CY7C1170KV18-550BZC Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
This product is a surface mount with a tray packaging, first published in 2003. It has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand up to 168 hours of exposure to moisture. It has 165 terminations and utilizes SRAM technology with synchronous DDR II . The voltage supply for this product is between 1.7V to 1.9V. It has a parallel memory interface with a memory width of 36. The maximum standby current for this product is 0.34A.
CY7C1170KV18-550BZC Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
I/O Type: COMMON
CY7C1170KV18-550BZC Applications
There are a lot of Cypress Semiconductor Corp
CY7C1170KV18-550BZC Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
CY7C1170KV18-550BZC More Descriptions
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
Surface Mount CY7C1170 Tray SRAM - Synchronous DDR II ic memory 550MHz 450ps 820mA 18Mb
DDR-II CIO, 18 Mbit Density, BGA-165Cypress Semiconductor SCT
SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
IC SRAM 18MBIT PARALLEL 165FBGA
QDR SRAM, 1MX18, 0.45NS, CMOS, P
Surface Mount CY7C1170 Tray SRAM - Synchronous DDR II ic memory 550MHz 450ps 820mA 18Mb
DDR-II CIO, 18 Mbit Density, BGA-165Cypress Semiconductor SCT
SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
IC SRAM 18MBIT PARALLEL 165FBGA
QDR SRAM, 1MX18, 0.45NS, CMOS, P
The three parts on the right have similar specifications to CY7C1170KV18-550BZC.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionReach Compliance CodeBase Part NumberQualification StatusOperating Supply VoltageMemory SizeNumber of PortsNominal Supply CurrentMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxI/O TypeSync/AsyncWord SizeRoHS StatusJESD-609 CodeECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountPower SuppliesOrganizationWrite Cycle Time - Word, PageAccess Time (Max)LengthHeight Seated (Max)Surface MountHTS CodeJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Supply Current-MaxMemory DensityStandby Voltage-MinWidthLead FreeView Compare
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CY7C1170KV18-550BZC13 WeeksSurface MountSurface Mount165-LBGA1650°C~70°C TATray2003Active3 (168 Hours)165SRAM - Synchronous, DDR II1.7V~1.9VBOTTOMnot_compliantCY7C1170Not Qualified1.8V18Mb 512K x 361820mAVolatile550MHz450 psSRAMParallel3-STATE3618b18 Mb0.34ACOMMONSynchronous36bNon-RoHS Compliant--------------------------
-
-Surface MountSurface Mount100-LQFP100-40°C~85°C TATray2004Obsolete3 (168 Hours)100SRAM - Dual Port, Asynchronous4.5V~5.5VQUADunknownCY7C0241Not Qualified5V72Kb 4K x 182260mAVolatile--SRAMParallel3-STATE1824b72 kb0.015ACOMMONAsynchronous18bROHS3 Compliante3EAR99Matte Tin (Sn)26015V0.5mm201005V4KX1855ns55 ns14mm1.6mm----------
-
-Surface MountSurface Mount84-LCC (J-Lead)84-40°C~85°C TATube2004Obsolete3 (168 Hours)84SRAM - Dual Port, Asynchronous4.5V~5.5VQUADunknownCY7C024Not Qualified5V64Kb 4K x 162290mAVolatile--SRAMParallel3-STATE1612b64 kb0.015ACOMMONAsynchronous16bROHS3 Compliante3EAR99Matte Tin (Sn)26015V-20845V4KX1625ns--5.08mm----------
-
--Surface Mount100-LQFP-0°C~70°C TATray2004Obsolete3 (168 Hours)100SRAM - Dual Port, Asynchronous3V~3.6VQUADunknownCY7C038Not Qualified-1.152Mb 64K x 182-Volatile--SRAMParallel3-STATE18--0.00005ACOMMON--ROHS3 Compliante33A991.B.2.AMatte Tin (Sn)26013.3V0.5mm201003.3V64KX1815ns15 ns14mm1.6mmYES8542.32.00.41S-PQFP-G1003.6V3V0.185mA1179648 bit2V14mmLead Free
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