Cypress Semiconductor Corp CY7C1069G30-10BVXI
- Part Number:
- CY7C1069G30-10BVXI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3717586-CY7C1069G30-10BVXI
- Description:
- IC SRAM 16MBIT 10NS 48VFBGA
- Datasheet:
- CY7C1069G30-10BVXI
Cypress Semiconductor Corp CY7C1069G30-10BVXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1069G30-10BVXI.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case48-VFBGA
- Surface MountYES
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN Code3A991.B.2.A
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply2.2V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size16Mb 2M x 8
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization2MX8
- Memory Width8
- Write Cycle Time - Word, Page10ns
- Memory Density16777216 bit
- Access Time (Max)10 ns
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
CY7C1069G30-10BVXI Overview
This particular component is manufactured by Cypress Semiconductor Corp. and falls under the category of Memory chips. It comes in a 48-VFBGA package or case and has an operating temperature range of -40°C to 85°C. The packaging for this chip is in a tray form. The required voltage supply for this chip ranges from 2.2V to 3.6V. The peak reflow temperature is not specified. It has one function and uses a parallel memory interface. The write cycle time for both word and page is 10 nanoseconds. The memory density for this chip is 16777216 bits. It is also compliant with the RoHS3 standard.
CY7C1069G30-10BVXI Features
Package / Case: 48-VFBGA
48 Pins
CY7C1069G30-10BVXI Applications
There are a lot of Cypress Semiconductor Corp CY7C1069G30-10BVXI Memory applications.
nonvolatile BIOS memory
data buffer
embedded logic
networking
Cache memory
hard disk drive (HDD)
mainframes
networks
workstations,
main computer memory
This particular component is manufactured by Cypress Semiconductor Corp. and falls under the category of Memory chips. It comes in a 48-VFBGA package or case and has an operating temperature range of -40°C to 85°C. The packaging for this chip is in a tray form. The required voltage supply for this chip ranges from 2.2V to 3.6V. The peak reflow temperature is not specified. It has one function and uses a parallel memory interface. The write cycle time for both word and page is 10 nanoseconds. The memory density for this chip is 16777216 bits. It is also compliant with the RoHS3 standard.
CY7C1069G30-10BVXI Features
Package / Case: 48-VFBGA
48 Pins
CY7C1069G30-10BVXI Applications
There are a lot of Cypress Semiconductor Corp CY7C1069G30-10BVXI Memory applications.
nonvolatile BIOS memory
data buffer
embedded logic
networking
Cache memory
hard disk drive (HDD)
mainframes
networks
workstations,
main computer memory
CY7C1069G30-10BVXI More Descriptions
SRAM Chip Async Single 3V 16M-Bit 2M x 8 10ns 48-Pin VFBGA Tray
Async Srams/Tray |Cypress Infineon Technologies CY7C1069G30-10BVXI
IC SRAM 16MBIT PARALLEL 48VFBGA
Async Srams/Tray |Cypress Infineon Technologies CY7C1069G30-10BVXI
IC SRAM 16MBIT PARALLEL 48VFBGA
The three parts on the right have similar specifications to CY7C1069G30-10BVXI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Supply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Height Seated (Max)LengthWidthRoHS StatusMountJESD-609 CodeTerminal FinishReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusOperating Supply VoltagePower SuppliesNumber of PortsNominal Supply CurrentOutput CharacteristicsAddress Bus WidthDensityStandby Current-MaxI/O TypeSync/AsyncWord SizeFrequencyLead FreeAdditional FeatureStandby Voltage-MinOutput EnableView Compare
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CY7C1069G30-10BVXI13 WeeksSurface Mount48-VFBGAYES48-40°C~85°C TATray2006Active3 (168 Hours)483A991.B.2.A8542.32.00.41SRAM - Asynchronous2.2V~3.6VBOTTOMNOT SPECIFIED13V0.75mmNOT SPECIFIED3.6V2.2V16Mb 2M x 8VolatileSRAMParallel2MX8810ns16777216 bit10 ns1mm8mm6mmROHS3 Compliant-------------------------
-
-Surface Mount84-LCC (J-Lead)-84-40°C~85°C TATube2004Obsolete3 (168 Hours)84EAR99-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V----64Kb 4K x 16VolatileSRAMParallel4KX161625ns--5.08mm--ROHS3 CompliantSurface Mounte3Matte Tin (Sn)unknown20CY7C02484Not Qualified5V5V2290mA3-STATE12b64 kb0.015ACOMMONAsynchronous16b-----
-
-Surface Mount84-LCC (J-Lead)-840°C~70°C TATray2004Obsolete3 (168 Hours)84EAR99-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V----64Kb 4K x 16VolatileSRAMParallel4KX161655ns-55 ns5.08mm--ROHS3 CompliantSurface Mounte3Matte Tin (Sn)unknown20CY7C02484Not Qualified5V5V2230mA3-STATE24b64 kb0.015ACOMMONAsynchronous16b55GHzLead Free---
-
-Surface Mount100-LQFP-1000°C~70°C TATray2001Obsolete3 (168 Hours)100EAR99-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD24015V0.5mm---144Kb 8K x 18VolatileSRAMParallel8KX181815ns-15 ns1.6mm14mm-Non-RoHS CompliantSurface Mounte0TIN LEADnot_compliant30CY7C0251100Not Qualified5V5V2300mA3-STATE13b144 kb0.015ACOMMONAsynchronous18b15GHzContains LeadINTERRUPT FLAG2VYES
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