Cypress Semiconductor Corp CY7C1061G30-10ZSXIT
- Part Number:
- CY7C1061G30-10ZSXIT
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3236622-CY7C1061G30-10ZSXIT
- Description:
- IC SRAM 16MBIT 10NS 54TSOP
- Datasheet:
- CY7C1061G30-10ZSXIT
Cypress Semiconductor Corp CY7C1061G30-10ZSXIT technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1061G30-10ZSXIT.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case54-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Published2012
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations54
- ECCN Code3A991.B.2.B
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply2.2V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.8mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G54
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size16Mb 1M x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization1MX16
- Memory Width16
- Write Cycle Time - Word, Page10ns
- Memory Density16777216 bit
- Access Time (Max)10 ns
- Height Seated (Max)1.2mm
- Length22.415mm
- Width10.16mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CY7C1061G30-10ZSXIT Overview
The manufacturer of this component is Cypress Semiconductor Corp. It is a type of Memory chip, which falls under the Memory category. The package or case size is 54-TSOP (0.400, 10.16mm width), and it is currently in the Active status. It has 54 terminations and falls under the ECCN Code 3A991.B.2.B and HTS Code 8542.32.00.41. The supply voltage for this chip is 3V, with a minimum supply voltage of 2.2V. It has an organization of 1MX16, and the write cycle time for a word or page is 10 nanoseconds. The maximum height when seated is 1.2mm.
CY7C1061G30-10ZSXIT Features
Package / Case: 54-TSOP (0.400, 10.16mm Width)
CY7C1061G30-10ZSXIT Applications
There are a lot of Cypress Semiconductor Corp CY7C1061G30-10ZSXIT Memory applications.
networking
Camcorders
hard disk drive (HDD)
telecommunications
DVD disk buffer
data buffer
graphics card
eSRAM
eDRAM
personal digital assistants
The manufacturer of this component is Cypress Semiconductor Corp. It is a type of Memory chip, which falls under the Memory category. The package or case size is 54-TSOP (0.400, 10.16mm width), and it is currently in the Active status. It has 54 terminations and falls under the ECCN Code 3A991.B.2.B and HTS Code 8542.32.00.41. The supply voltage for this chip is 3V, with a minimum supply voltage of 2.2V. It has an organization of 1MX16, and the write cycle time for a word or page is 10 nanoseconds. The maximum height when seated is 1.2mm.
CY7C1061G30-10ZSXIT Features
Package / Case: 54-TSOP (0.400, 10.16mm Width)
CY7C1061G30-10ZSXIT Applications
There are a lot of Cypress Semiconductor Corp CY7C1061G30-10ZSXIT Memory applications.
networking
Camcorders
hard disk drive (HDD)
telecommunications
DVD disk buffer
data buffer
graphics card
eSRAM
eDRAM
personal digital assistants
CY7C1061G30-10ZSXIT More Descriptions
SRAM Chip Async Single 2.5V/3.3V 16M-bit 1M x 16 10ns 54-Pin TSOP-II T/R
Async Srams/Reel |Cypress Infineon Technologies CY7C1061G30-10ZSXIT
2.2V~3.6V 16Mbit TSOPII-54 SRAM ROHS
Standard SRAM, 1MX16, 10ns, CMOS, PDSO54
Async Srams/Reel |Cypress Infineon Technologies CY7C1061G30-10ZSXIT
2.2V~3.6V 16Mbit TSOPII-54 SRAM ROHS
Standard SRAM, 1MX16, 10ns, CMOS, PDSO54
The three parts on the right have similar specifications to CY7C1061G30-10ZSXIT.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Height Seated (Max)LengthWidthRoHS StatusLead FreeMountNumber of PinsJESD-609 CodeTerminal FinishReach Compliance CodeFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusOperating Supply VoltagePower SuppliesNumber of PortsNominal Supply CurrentOutput CharacteristicsAddress Bus WidthDensityStandby Current-MaxI/O TypeSync/AsyncWord SizeAdditional FeatureStandby Voltage-MinRadiation HardeningView Compare
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CY7C1061G30-10ZSXIT13 WeeksSurface Mount54-TSOP (0.400, 10.16mm Width)YES-40°C~85°C TATape & Reel (TR)2012yesActive3 (168 Hours)543A991.B.2.B8542.32.00.41SRAM - Asynchronous2.2V~3.6VDUALNOT SPECIFIED13V0.8mmNOT SPECIFIEDR-PDSO-G543.6V2.2V16Mb 1M x 16VolatileSRAMParallel1MX161610ns16777216 bit10 ns1.2mm22.415mm10.16mmROHS3 CompliantLead Free-------------------------
-
-Surface Mount84-LCC (J-Lead)-0°C~70°C TATray2004-Obsolete3 (168 Hours)84EAR99-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V-----64Kb 4K x 16VolatileSRAMParallel4KX161655ns-55 ns5.08mm--ROHS3 CompliantLead FreeSurface Mount84e3Matte Tin (Sn)unknown55GHz20CY7C02484Not Qualified5V5V2230mA3-STATE24b64 kb0.015ACOMMONAsynchronous16b---
-
8 WeeksSurface Mount144-LQFP-0°C~70°C TATape & Reel (TR)1997yesObsolete3 (168 Hours)144--SRAM - Dual Port, Asynchronous3V~3.6VQUAD26013.3V0.5mm--3.465V3.135V1.152Mb 32K x 36VolatileSRAMParallel-3615ns-15 ns1.6mm--ROHS3 CompliantLead FreeSurface Mount144e3Matte Tin (Sn)-15GHz30CY7C057--3.3V-2360mA3-STATE30b1.1 Mb0.00005ACOMMONAsynchronous36bAUTOMATIC POWER-DOWN2VNo
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-Surface Mount100-LQFPYES-40°C~85°C TATray-yesObsolete3 (168 Hours)100--SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V0.5mm-S-PQFP-G1005.5V4.5V64Kb 4K x 16VolatileSRAMParallel4KX161625ns65536 bit25 ns1.6mm14mm14mmROHS3 Compliant---e3/e4MATTE TIN/NICKEL PALLADIUM GOLDunknown-20-100COMMERCIAL--------------
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