Cypress Semiconductor Corp CY62177EV18LL-70BAXI
- Part Number:
- CY62177EV18LL-70BAXI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3228768-CY62177EV18LL-70BAXI
- Description:
- IC SRAM 32MBIT 70NS 48FBGA
- Datasheet:
- CY62177EV18LL-70BAXI
Cypress Semiconductor Corp CY62177EV18LL-70BAXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY62177EV18LL-70BAXI.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Surface MountYES
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2001
- SeriesMoBL®
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- Terminal FinishTIN SILVER COPPER
- TechnologySRAM - Asynchronous
- Voltage - Supply1.65V~2.25V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.75mm
- Reflow Temperature-Max (s)40
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)2.25V
- Memory Size32Mb 4M x 8 2M x 16
- Number of Ports1
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Memory Width16
- Write Cycle Time - Word, Page70ns
- Address Bus Width21b
- Density32 Mb
- Access Time (Max)70 ns
- Length9.5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CY62177EV18LL-70BAXI Overview
This product is designed for surface mounting and has an operating temperature range of -40°C to 85°C. It has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand exposure to moisture for up to 168 hours. The product has 48 terminations and can withstand a peak reflow temperature of 260°C. The maximum supply voltage is 2.25V and it is a volatile memory type. The write cycle time for a word or page is 70ns and it has a density of 32 Mb. This product is not radiation hardened.
CY62177EV18LL-70BAXI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:1.8V
CY62177EV18LL-70BAXI Applications
There are a lot of Cypress Semiconductor Corp CY62177EV18LL-70BAXI Memory applications.
mainframes
Cache memory
Camcorders
main computer memory
printers
data buffer
supercomputers
embedded logic
nonvolatile BIOS memory
DVD disk buffer
This product is designed for surface mounting and has an operating temperature range of -40°C to 85°C. It has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand exposure to moisture for up to 168 hours. The product has 48 terminations and can withstand a peak reflow temperature of 260°C. The maximum supply voltage is 2.25V and it is a volatile memory type. The write cycle time for a word or page is 70ns and it has a density of 32 Mb. This product is not radiation hardened.
CY62177EV18LL-70BAXI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:1.8V
CY62177EV18LL-70BAXI Applications
There are a lot of Cypress Semiconductor Corp CY62177EV18LL-70BAXI Memory applications.
mainframes
Cache memory
Camcorders
main computer memory
printers
data buffer
supercomputers
embedded logic
nonvolatile BIOS memory
DVD disk buffer
CY62177EV18LL-70BAXI More Descriptions
SRAM - Asynchronous Memory IC 32Mb (4M x 8, 2M x 16) Parallel 70ns 48-FBGA (8x9.
SRAM Chip Async Single 1.8V 32M-Bit 4M/2M x 8/16-Bit 70ns 48-Pin FBGA Tray
IC SRAM 32MBIT PARALLEL 48FBGA
SRAM 32Mb, 1.8V, 70ns MoBL SRAM
SRAM Chip Async Single 1.8V 32M-Bit 4M/2M x 8/16-Bit 70ns 48-Pin FBGA Tray
IC SRAM 32MBIT PARALLEL 48FBGA
SRAM 32Mb, 1.8V, 70ns MoBL SRAM
The three parts on the right have similar specifications to CY62177EV18LL-70BAXI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Operating Supply VoltageSupply Voltage-Max (Vsup)Memory SizeNumber of PortsMemory TypeMemory FormatMemory InterfaceMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityAccess Time (Max)LengthRadiation HardeningRoHS StatusLead FreePbfree CodeReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusSupply Voltage-Min (Vsup)OrganizationMemory DensityHeight Seated (Max)WidthView Compare
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CY62177EV18LL-70BAXI13 WeeksSurface Mount48-TFBGAYES48-40°C~85°C TATray2001MoBL®e1Active3 (168 Hours)48TIN SILVER COPPERSRAM - Asynchronous1.65V~2.25VBOTTOM26011.8V0.75mm401.8V2.25V32Mb 4M x 8 2M x 161VolatileSRAMParallel1670ns21b32 Mb70 ns9.5mmNoROHS3 CompliantLead Free------------
-
13 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)---40°C~85°C TATape & Reel (TR)-MoBL®-Active3 (168 Hours)--SRAM - Asynchronous1.65V~2.2V--------4Mb 256K x 16-VolatileSRAMParallel-55ns-----ROHS3 Compliant------------
-
-Surface Mount44-TSOP (0.400, 10.16mm Width)YES--40°C~85°C TATube-MoBL®e4Obsolete3 (168 Hours)32NICKEL PALLADIUM GOLDSRAM - Asynchronous2.2V~3.6VDUAL26013V1.27mm--3.6V2Mb 256K x 8-VolatileSRAMParallel845ns--45 ns20.95mm-ROHS3 Compliant-yesunknown2032R-PDSO-G32COMMERCIAL2.2V256KX82097152 bit1.2mm10.16mm
-
-Surface Mount32-TFSOP (0.724, 18.40mm Width)YES--40°C~125°C TATube-MoBL®e3/e4Obsolete3 (168 Hours)32MATTE TIN/NICKEL PALLADIUM GOLDSRAM - Asynchronous4.5V~5.5VDUAL26015V0.5mm--5.5V1Mb 128K x 8-VolatileSRAMParallel870ns--70 ns18.4mm-ROHS3 Compliant-yesunknown2032R-PDSO-G32COMMERCIAL4.5V128KX81048576 bit1.2mm8mm
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