Cypress Semiconductor Corp CY62146G30-45ZSXA
- Part Number:
- CY62146G30-45ZSXA
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3234278-CY62146G30-45ZSXA
- Description:
- IC SRAM 4MBIT 45NS 44TSOP
- Datasheet:
- CY62146G30-45ZSXA
Cypress Semiconductor Corp CY62146G30-45ZSXA technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY62146G30-45ZSXA.
- Factory Lead Time18 Weeks
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2012
- SeriesMoBL®
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations44
- ECCN Code3A991.B.2.A
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply2.2V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.8mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCY62146
- JESD-30 CodeR-PDSO-G44
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size4Mb 256K x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization256KX16
- Memory Width16
- Write Cycle Time - Word, Page45ns
- Memory Density4194304 bit
- Access Time (Max)45 ns
- Height Seated (Max)1.194mm
- Length18.415mm
- Width10.16mm
- RoHS StatusROHS3 Compliant
CY62146G30-45ZSXA Overview
This specific component is manufactured by Cypress Semiconductor Corp. It is classified as a Memory chip and falls under the Memory category. The packaging for this part is in the form of a tray and it was first released in 2012. It is part of the MoBL® series and has a Moisture Sensitivity Level (MSL) of 3, with a maximum exposure time of 168 hours. The supply voltage for this chip is 3V and it is designated with the JESD-30 Code R-PDSO-G44. The minimum supply voltage is 2.2V and the maximum access time is 45 nanoseconds. The width of this component is 10.16mm. It is also compliant with the Restriction of Hazardous Substances Directive (RoHS) and meets the third version of the directive (ROHS3).
CY62146G30-45ZSXA Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
CY62146G30-45ZSXA Applications
There are a lot of Cypress Semiconductor Corp CY62146G30-45ZSXA Memory applications.
data buffer
printers
nonvolatile BIOS memory
DVD disk buffer
Cache memory
cell phones
personal digital assistants
eSRAM
networking
telecommunications
This specific component is manufactured by Cypress Semiconductor Corp. It is classified as a Memory chip and falls under the Memory category. The packaging for this part is in the form of a tray and it was first released in 2012. It is part of the MoBL® series and has a Moisture Sensitivity Level (MSL) of 3, with a maximum exposure time of 168 hours. The supply voltage for this chip is 3V and it is designated with the JESD-30 Code R-PDSO-G44. The minimum supply voltage is 2.2V and the maximum access time is 45 nanoseconds. The width of this component is 10.16mm. It is also compliant with the Restriction of Hazardous Substances Directive (RoHS) and meets the third version of the directive (ROHS3).
CY62146G30-45ZSXA Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
CY62146G30-45ZSXA Applications
There are a lot of Cypress Semiconductor Corp CY62146G30-45ZSXA Memory applications.
data buffer
printers
nonvolatile BIOS memory
DVD disk buffer
Cache memory
cell phones
personal digital assistants
eSRAM
networking
telecommunications
CY62146G30-45ZSXA More Descriptions
SRAM Chip Async Single 2.5V/3V/3.3V 4M-bit 256K x 16 45ns Automotive 44-Pin TSOP-II Tray
4-Mbit (256K words × 16 bit) Static RAM, with Error-Correcting Code (ECC)
Asynchronous SRAM, 4096 Kb Density, 45 ns Speed, SOP-44, RoHSCypress Semiconductor SCT
2.2V~3.6V 4Mbit TSOP-44 SRAM ROHS
IC SRAM 4MBIT PARALLEL 44TSOP II
4-Mbit (256K words × 16 bit) Static RAM, with Error-Correcting Code (ECC)
Asynchronous SRAM, 4096 Kb Density, 45 ns Speed, SOP-44, RoHSCypress Semiconductor SCT
2.2V~3.6V 4Mbit TSOP-44 SRAM ROHS
IC SRAM 4MBIT PARALLEL 44TSOP II
The three parts on the right have similar specifications to CY62146G30-45ZSXA.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Height Seated (Max)LengthWidthRoHS StatusJESD-609 CodePbfree CodeTerminal FinishReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusView Compare
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CY62146G30-45ZSXA18 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)YES-40°C~85°C TATray2012MoBL®Active3 (168 Hours)443A991.B.2.A8542.32.00.41SRAM - Asynchronous2.2V~3.6VDUALNOT SPECIFIED13V0.8mmNOT SPECIFIEDCY62146R-PDSO-G443.6V2.2V4Mb 256K x 16VolatileSRAMParallel256KX161645ns4194304 bit45 ns1.194mm18.415mm10.16mmROHS3 Compliant--------
-
-Surface Mount48-VFBGAYES-40°C~125°C TATray-MoBL®Obsolete3 (168 Hours)48--SRAM - Asynchronous2.2V~3.6VBOTTOM26013V0.75mm--R-PBGA-B483.6V2.2V1Mb 64K x 16VolatileSRAMParallel64KX161655ns1048576 bit55 ns1mm8mm6mmROHS3 Compliante1yesTIN SILVER COPPERunknown2048COMMERCIAL
-
13 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATape & Reel (TR)-MoBL®Active3 (168 Hours)---SRAM - Asynchronous1.65V~2.2V----------4Mb 256K x 16VolatileSRAMParallel--55ns-----ROHS3 Compliant-------
-
-Surface Mount32-TFSOP (0.724, 18.40mm Width)YES-40°C~125°C TATube-MoBL®Obsolete3 (168 Hours)32--SRAM - Asynchronous4.5V~5.5VDUAL26015V0.5mm--R-PDSO-G325.5V4.5V1Mb 128K x 8VolatileSRAMParallel128KX8870ns1048576 bit70 ns1.2mm18.4mm8mmROHS3 Compliante3/e4yesMATTE TIN/NICKEL PALLADIUM GOLDunknown2032COMMERCIAL
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