Cypress Semiconductor Corp CY14V256LA-BA35XI
- Part Number:
- CY14V256LA-BA35XI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3235875-CY14V256LA-BA35XI
- Description:
- IC NVSRAM 256KBIT 35NS 48FBGA
- Datasheet:
- CY14V256LA-BA35XI
Cypress Semiconductor Corp CY14V256LA-BA35XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14V256LA-BA35XI.
- Factory Lead Time16 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2009
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN Code3A991.B.2.A
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8542.32.00.41
- SubcategorySRAMs
- TechnologyNVSRAM (Non-Volatile SRAM)
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.75mm
- Reflow Temperature-Max (s)30
- Base Part NumberCY14V256
- Qualification StatusNot Qualified
- Operating Supply Voltage3.3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)3V
- Memory Size256Kb 32K x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Supply Current-Max0.06mA
- Memory FormatNVSRAM
- Memory InterfaceParallel
- Data Bus Width8b
- Organization32KX8
- Memory Width8
- Write Cycle Time - Word, Page35ns
- Density256 kb
- Standby Current-Max0.008A
- Access Time (Max)35 ns
- Word Size8b
- Height Seated (Max)1.2mm
- Length10mm
- RoHS StatusROHS3 Compliant
CY14V256LA-BA35XI Overview
The packaging for the CY14V256 base part number is a tray with a total of 48 terminations. The terminal finish options for this memory type are tin, silver, or copper, with the corresponding HTS code being 8542.32.00.41. This non-volatile memory has a width of 8 and requires an operating supply voltage of 3.3V, with a minimum supply voltage of 3V. The maximum seated height for this packaging is 1.2mm, making it a compact and efficient option for electronic devices. With its small size and versatile voltage options, the CY14V256 is a reliable and convenient choice for various applications.
CY14V256LA-BA35XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3.3V
CY14V256LA-BA35XI Applications
There are a lot of Cypress Semiconductor Corp CY14V256LA-BA35XI Memory applications.
servers
personal computers
eDRAM
mainframes
graphics card
personal digital assistants
eSRAM
multimedia computers
data buffer
telecommunications
The packaging for the CY14V256 base part number is a tray with a total of 48 terminations. The terminal finish options for this memory type are tin, silver, or copper, with the corresponding HTS code being 8542.32.00.41. This non-volatile memory has a width of 8 and requires an operating supply voltage of 3.3V, with a minimum supply voltage of 3V. The maximum seated height for this packaging is 1.2mm, making it a compact and efficient option for electronic devices. With its small size and versatile voltage options, the CY14V256 is a reliable and convenient choice for various applications.
CY14V256LA-BA35XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3.3V
CY14V256LA-BA35XI Applications
There are a lot of Cypress Semiconductor Corp CY14V256LA-BA35XI Memory applications.
servers
personal computers
eDRAM
mainframes
graphics card
personal digital assistants
eSRAM
multimedia computers
data buffer
telecommunications
CY14V256LA-BA35XI More Descriptions
Non Volatile Srams/Tray |Cypress Infineon Technologies CY14V256LA-BA35XI
NVRAM NVSRAM Parallel 256K-Bit 3.3V 48-Pin FBGA Tray
NVRAM 256Kb 35ns 32K x 8 nvSRAM
NVRAM NVSRAM Parallel 256K-Bit 3.3V 48-Pin FBGA Tray
NVRAM 256Kb 35ns 32K x 8 nvSRAM
The three parts on the right have similar specifications to CY14V256LA-BA35XI.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeSupply Current-MaxMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthWrite Cycle Time - Word, PageDensityStandby Current-MaxAccess Time (Max)Word SizeHeight Seated (Max)LengthRoHS StatusSurface MountTime@Peak Reflow Temperature-Max (s)JESD-30 CodeMemory DensityWidthPower SuppliesReach Compliance CodePin CountView Compare
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CY14V256LA-BA35XI16 WeeksCopper, Silver, TinSurface MountSurface Mount48-TFBGA48-40°C~85°C TATray2009e1yesActive3 (168 Hours)483A991.B.2.ATin/Silver/Copper (Sn/Ag/Cu)8542.32.00.41SRAMsNVSRAM (Non-Volatile SRAM)2.7V~3.6VBOTTOM26013.3V0.75mm30CY14V256Not Qualified3.3V3.6V3V256Kb 32K x 8Non-VolatileASYNCHRONOUS0.06mANVSRAMParallel8b32KX8835ns256 kb0.008A35 ns8b1.2mm10mmROHS3 Compliant---------
-
26 Weeks--Surface Mount60-LFBGA--40°C~85°C TATape & Reel (TR)---Active3 (168 Hours)603A991.A.2-8542.90.00.00-NVSRAM (Non-Volatile SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED13V0.75mm----3.6V2.7V16Mb 1M x 16Non-VolatileASYNCHRONOUS-NVSRAMParallel-1MX161625ns--25 ns-1.2mm18mmROHS3 CompliantYESNOT SPECIFIEDR-PBGA-B6016777216 bit10mm---
-
11 Weeks--Surface Mount48-TFBGA--40°C~85°C TATape & Reel (TR)2011e1-Last Time Buy3 (168 Hours)483A991.B.2.ATin/Silver/Copper (Sn/Ag/Cu)8542.32.00.41SRAMsNVSRAM (Non-Volatile SRAM)2.7V~3.6VBOTTOM26013V0.75mm-CY14B104Not Qualified-3.6V2.7V4Mb 256K x 16Non-VolatileASYNCHRONOUS0.07mANVSRAMParallel-256KX161625ns-0.005A25 ns-1.2mm10mmNon-RoHS CompliantYES30R-PBGA-B484194304 bit6mm3/3.3V--
-
---Surface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATube---Obsolete3 (168 Hours)44----NVSRAM (Non-Volatile SRAM)2.7V~3.6VDUAL-13V0.8mm--COMMERCIAL-3.6V2.7V4Mb 512K x 8Non-VolatileASYNCHRONOUS-NVSRAMParallel-512KX8845ns--45 ns-1.194mm18.415mmROHS3 CompliantYES-R-PDSO-G444194304 bit10.16mm-unknown44
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