Cypress Semiconductor Corp CY14V116N-BZ30XI

Name: CY14V116N-BZ30XI
Brand: Cypress Semiconductor Corp
SKU: 3229523-CY14V116N-BZ30XI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CY14V116N-BZ30XI

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 3229523-CY14V116N-BZ30XI

Description:: IC NVSRAM 16MBIT 30NS 165FBGA

ECAD Model:

Datasheet:: CY14V116N-BZ30XI

Specifications

Cypress Semiconductor Corp CY14V116N-BZ30XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14V116N-BZ30XI.

Factory Lead Time
7 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
165-LBGA
Number of Pins
165
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2005
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
165
ECCN Code
3A991.B.2.B
HTS Code
8542.32.00.41
Technology
NVSRAM (Non-Volatile SRAM)
Voltage - Supply
1.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
1mm
Reflow Temperature-Max (s)
NOT SPECIFIED
Operating Supply Voltage
3V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
16Mb 1M x 16
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Memory Format
NVSRAM
Memory Interface
Parallel
Data Bus Width
16b
Organization
1MX16
Memory Width
16
Write Cycle Time - Word, Page
30ns
Density
16 Mb
Access Time (Max)
30 ns
Height Seated (Max)
1.4mm
Length
17mm
RoHS Status
ROHS3 Compliant

Description

CY14V116N-BZ30XI Overview
This particular component is manufactured by Cypress Semiconductor Corp and falls under the category of Memory chips. It is designed with a contact plating of Copper, Silver, and Tin, and is packaged in a tray. This specific model was first published in 2005 and is currently still in active production. It has a Moisture Sensitivity Level (MSL) rating of 3, meaning it can withstand exposure to moisture for up to 168 hours without being damaged. The component has a single function and a terminal pitch of 1mm. Its memory size is 16Mb, specifically 1M x 16, and it utilizes a parallel memory interface. The maximum access time for this chip is 30 nanoseconds.

CY14V116N-BZ30XI Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:3V

CY14V116N-BZ30XI Applications
There are a lot of Cypress Semiconductor Corp CY14V116N-BZ30XI Memory applications.

networking
eDRAM
cell phones
Camcorders
eSRAM
hard disk drive (HDD)
main computer memory
printers
personal digital assistants
Cache memory

CY14V116N-BZ30XI More Descriptions

CY14V116N Series 16 Mb (1024 K × 16) 3.6 V Surface Mount nvSRAM - FBGA-165
NVRAM NVSRAM Parallel 16Mbit 3V/3.3V 165-Pin FBGA Tray
NON-VOLATILE SRAM, 1MX16, 30NS P

Product Comparison

The three parts on the right have similar specifications to CY14V116N-BZ30XI.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reflow Temperature-Max (s)

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Memory Type

Operating Mode

Memory Format

Memory Interface

Data Bus Width

Organization

Memory Width

Write Cycle Time - Word, Page

Density

Access Time (Max)

Height Seated (Max)

Length

RoHS Status

Surface Mount

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Memory Density

Width

Reach Compliance Code

Pin Count

Qualification Status

Supplier Device Package

Access Time

View Compare
CY14V116N-BZ30XI

Cypress Semiconductor Corp

7 Weeks

Copper, Silver, Tin

Surface Mount

Surface Mount

165-LBGA

165

-40°C~85°C TA

Tray

2005

Active

3 (168 Hours)

165

3A991.B.2.B

8542.32.00.41

NVSRAM (Non-Volatile SRAM)

1.7V~3.6V

BOTTOM

NOT SPECIFIED

1

3V

1mm

NOT SPECIFIED

3V

3.6V

2.7V

16Mb 1M x 16

Non-Volatile

ASYNCHRONOUS

NVSRAM

Parallel

16b

1MX16

16

30ns

16 Mb

30 ns

1.4mm

17mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-
CY14B116N-BA25XI

Cypress Semiconductor Corp

26 Weeks

-

-

Surface Mount

60-LFBGA

-

-40°C~85°C TA

Tray

-

Active

3 (168 Hours)

60

3A991.A.2

8542.90.00.00

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

NOT SPECIFIED

1

3V

0.75mm

-

-

3.6V

2.7V

16Mb 1M x 16

Non-Volatile

ASYNCHRONOUS

NVSRAM

Parallel

-

1MX16

16

25ns

-

25 ns

1.2mm

18mm

ROHS3 Compliant

YES

NOT SPECIFIED

R-PBGA-B60

16777216 bit

10mm

-

-

-

-

-

CY14V116N-BZ30XI vs CY14B116N-BA25XI
CY14B104L-ZS45XI

ON Semiconductor

-

-

-

Surface Mount

44-TSOP (0.400, 10.16mm Width)

-

-40°C~85°C TA

Tube

-

Obsolete

3 (168 Hours)

44

-

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

DUAL

-

1

3V

0.8mm

-

-

3.6V

2.7V

4Mb 512K x 8

Non-Volatile

ASYNCHRONOUS

NVSRAM

Parallel

-

512KX8

8

45ns

-

45 ns

1.194mm

18.415mm

ROHS3 Compliant

YES

-

R-PDSO-G44

4194304 bit

10.16mm

unknown

44

COMMERCIAL

-

-

CY14V116N-BZ30XI vs CY14B104L-ZS45XI
CY14B104L-BA45XC

ON Semiconductor

-

-

-

Surface Mount

48-TFBGA

-

0°C~70°C TA

Tube

-

Obsolete

3 (168 Hours)

-

-

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

-

-

-

-

-

-

-

-

-

4Mb 512K x 8

Non-Volatile

-

NVSRAM

Parallel

-

-

-

45ns

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

48-FBGA (6x10)

45ns

CY14V116N-BZ30XI vs CY14B104L-BA45XC