Cypress Semiconductor Corp CY14V104LA-BA45XI

Name: CY14V104LA-BA45XI
Brand: Cypress Semiconductor Corp
SKU: 3238574-CY14V104LA-BA45XI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CY14V104LA-BA45XI

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 3238574-CY14V104LA-BA45XI

Description:: IC NVSRAM 4MBIT 45NS 48FBGA

ECAD Model:

Datasheet:: CY14V104LA-BA45XI

Specifications

Cypress Semiconductor Corp CY14V104LA-BA45XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14V104LA-BA45XI.

Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
48-TFBGA
Number of Pins
48
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2007
JESD-609 Code
e1
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
ECCN Code
3A991.B.2.A
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8542.32.00.41
Subcategory
SRAMs
Technology
NVSRAM (Non-Volatile SRAM)
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
3.3V
Terminal Pitch
0.75mm
Reflow Temperature-Max (s)
30
Base Part Number
CY14V104
Pin Count
48
Operating Supply Voltage
3.3V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
3V
Memory Size
4Mb 512K x 8
Nominal Supply Current
52mA
Memory Type
Non-Volatile
Memory Format
NVSRAM
Memory Interface
Parallel
Data Bus Width
8b
Organization
512KX8
Memory Width
8
Write Cycle Time - Word, Page
45ns
Density
4 Mb
Standby Current-Max
0.008A
Access Time (Max)
45 ns
Word Size
8b
Height Seated (Max)
1.2mm
Length
10mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

CY14V104LA-BA45XI Overview
This product features a surface mount mounting type, making it easy to install and suitable for a variety of applications. It has been assigned a JESD-609 code of e1, indicating its compliance with industry standards. With a moisture sensitivity level of 3 (168 hours), this product is designed to withstand humid environments without compromising its performance. The nominal supply current is 52mA, ensuring efficient power consumption. This product also boasts a non-volatile memory type and a parallel memory interface, providing reliable and fast data storage. Its write cycle time for both word and page is 45ns, and it has a density of 4 Mb and a word size of 8b. With a length of 10mm, this product is compact and versatile for various design requirements.

CY14V104LA-BA45XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3.3V

CY14V104LA-BA45XI Applications
There are a lot of Cypress Semiconductor Corp CY14V104LA-BA45XI Memory applications.

hard disk drive (HDD)
nonvolatile BIOS memory
cell phones
embedded logic
personal digital assistants
networks
networking
supercomputers
workstations,
Camcorders

CY14V104LA-BA45XI More Descriptions

Non Volatile Srams/Tray |Cypress Infineon Technologies CY14V104LA-BA45XI
NVRAM NVSRAM Parallel 4M-Bit 3.3V 48-Pin FBGA Tray
IC NVSRAM 4MBIT PARALLEL 48FBGA
4-Mbit (512 K × 8 / 256 K × 16) nvSRAM
NVRAM 1Mb 45ns 512K x 8 nvSRAM

Product Comparison

The three parts on the right have similar specifications to CY14V104LA-BA45XI.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reflow Temperature-Max (s)

Base Part Number

Pin Count

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Nominal Supply Current

Memory Type

Memory Format

Memory Interface

Data Bus Width

Organization

Memory Width

Write Cycle Time - Word, Page

Density

Standby Current-Max

Access Time (Max)

Word Size

Height Seated (Max)

Length

Radiation Hardening

RoHS Status

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Operating Mode

Lead Free

Surface Mount

JESD-30 Code

Power Supplies

Supply Current-Max

Memory Density

Width

View Compare
CY14V104LA-BA45XI

Cypress Semiconductor Corp

10 Weeks

Surface Mount

Surface Mount

48-TFBGA

48

-40°C~85°C TA

Tray

2007

e1

Active

3 (168 Hours)

48

3A991.B.2.A

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

260

1

3.3V

0.75mm

30

CY14V104

48

3.3V

3.6V

3V

4Mb 512K x 8

52mA

Non-Volatile

NVSRAM

Parallel

8b

512KX8

8

45ns

4 Mb

0.008A

45 ns

8b

1.2mm

10mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
CY14B101L-SP35XI

Cypress Semiconductor Corp

-

Surface Mount

Surface Mount

48-BSSOP (0.295, 7.50mm Width)

48

-40°C~85°C TA

Tube

2009

e4

Obsolete

3 (168 Hours)

48

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

DUAL

260

1

3V

0.635mm

-

CY14B101

48

3.3V

3.6V

2.7V

1Mb 128K x 8

60mA

Non-Volatile

NVSRAM

Parallel

8b

128KX8

8

35ns

1 Mb

0.003A

35 ns

8b

2.794mm

15.875mm

-

ROHS3 Compliant

unknown

20

Not Qualified

ASYNCHRONOUS

Lead Free

-

-

-

-

-

-

CY14V104LA-BA45XI vs CY14B101L-SP35XI
CY14B104NA-BA25IT

Cypress Semiconductor Corp

11 Weeks

-

Surface Mount

48-TFBGA

-

-40°C~85°C TA

Tape & Reel (TR)

2011

e1

Last Time Buy

3 (168 Hours)

48

3A991.B.2.A

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

260

1

3V

0.75mm

-

CY14B104

-

-

3.6V

2.7V

4Mb 256K x 16

-

Non-Volatile

NVSRAM

Parallel

-

256KX16

16

25ns

-

0.005A

25 ns

-

1.2mm

10mm

-

Non-RoHS Compliant

-

30

Not Qualified

ASYNCHRONOUS

-

YES

R-PBGA-B48

3/3.3V

0.07mA

4194304 bit

6mm

CY14V104LA-BA45XI vs CY14B104NA-BA25IT
CY14B104L-ZS45XI

ON Semiconductor

-

-

Surface Mount

44-TSOP (0.400, 10.16mm Width)

-

-40°C~85°C TA

Tube

-

-

Obsolete

3 (168 Hours)

44

-

-

-

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

DUAL

-

1

3V

0.8mm

-

-

44

-

3.6V

2.7V

4Mb 512K x 8

-

Non-Volatile

NVSRAM

Parallel

-

512KX8

8

45ns

-

-

45 ns

-

1.194mm

18.415mm

-

ROHS3 Compliant

unknown

-

COMMERCIAL

ASYNCHRONOUS

-

YES

R-PDSO-G44

-

-

4194304 bit

10.16mm

CY14V104LA-BA45XI vs CY14B104L-ZS45XI