CY14B104NA-BA25XI

Cypress Semiconductor Corp CY14B104NA-BA25XI

Part Number:
CY14B104NA-BA25XI
Manufacturer:
Cypress Semiconductor Corp
Ventron No:
3230216-CY14B104NA-BA25XI
Description:
IC NVSRAM 4MBIT 25NS 48FBGA
ECAD Model:
Datasheet:
CY14B104NA-BA25XI

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Specifications
Cypress Semiconductor Corp CY14B104NA-BA25XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B104NA-BA25XI.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Copper, Silver, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    48-TFBGA
  • Number of Pins
    48
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Published
    2011
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    48
  • ECCN Code
    3A991.B.2.A
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • HTS Code
    8542.32.00.41
  • Subcategory
    SRAMs
  • Technology
    NVSRAM (Non-Volatile SRAM)
  • Voltage - Supply
    2.7V~3.6V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    3V
  • Terminal Pitch
    0.75mm
  • Reflow Temperature-Max (s)
    30
  • Base Part Number
    CY14B104
  • Pin Count
    48
  • Operating Supply Voltage
    3V
  • Supply Voltage-Max (Vsup)
    3.6V
  • Supply Voltage-Min (Vsup)
    2.7V
  • Memory Size
    4Mb 256K x 16
  • Nominal Supply Current
    70mA
  • Memory Type
    Non-Volatile
  • Memory Format
    NVSRAM
  • Memory Interface
    Parallel
  • Data Bus Width
    16b
  • Organization
    256KX16
  • Memory Width
    16
  • Write Cycle Time - Word, Page
    25ns
  • Density
    4 Mb
  • Standby Current-Max
    0.005A
  • Access Time (Max)
    25 ns
  • Word Size
    16b
  • Height Seated (Max)
    1.2mm
  • Length
    10mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CY14B104NA-BA25XI Overview
From a technical standpoint, the brand of this part, Cypress Semiconductor Corp, is a well-known and reputable company in the semiconductor industry. As a Memory chip, it falls under the Memory category, which is a crucial component in various electronic devices. The package/case of this chip is 48-TFBGA, which stands for Thin Fine Ball Grid Array, a type of surface-mount packaging that allows for a higher number of pins and a smaller footprint. This makes it ideal for applications where space is limited, such as in mobile devices or compact electronic systems. In terms of specifications, the part is currently in Active status, meaning it is readily available for purchase and production. The voltage supply for this chip ranges from 2.7V to 3.6V, providing a stable and reliable power source for its operations. Its terminal position is at the bottom, indicating the orientation for proper installation on a circuit board. The base part number for this chip is CY14B104, which is a unique identifier used for ordering and referencing purposes. Its maximum supply voltage (Vsup) is 3.6V, ensuring that the chip operates within safe limits. With a memory size of 4Mb 256K x 16, this chip can store a significant amount of data, making it suitable for applications that require large memory capacity. One of the critical parameters of this chip is its nominal supply current, which is 70mA. This indicates the amount of current needed for the chip to function correctly, and it is crucial to ensure that the power supply can meet this requirement. Additionally, the data bus width of this chip is 16b, meaning it can process 16 bits of data at a time, making it efficient for data transfer and storage. When it comes to performance, this chip boasts a write cycle time of 25ns for both word and page operations. This means that it can write data to its memory in just 25 nanoseconds, providing high-speed data processing and storage capabilities. Overall, the Cypress Semiconductor Corp Memory chip offers impressive technical specifications and parameters, making it a reliable and efficient choice for various electronic applications.

CY14B104NA-BA25XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3V

CY14B104NA-BA25XI Applications
There are a lot of Cypress Semiconductor Corp CY14B104NA-BA25XI Memory applications.

DVD disk buffer
multimedia computers
personal digital assistants
main computer memory
printers
supercomputers
workstations,
hard disk drive (HDD)
data buffer
personal computers
CY14B104NA-BA25XI More Descriptions
CY14B104NA Series 4-Mb (512K × 8/256K × 16) 3.6 V nvSRAM - FBGA-48
Non Volatile Srams/Tray |Cypress Infineon Technologies CY14B104NA-BA25XI
NVRAM NVSRAM Parallel 4M-Bit 3V 48-Pin FBGA Tray
2.7V~3.6V 4Mbit TFBGA-48 SRAM ROHS
IC NVSRAM 4MBIT PARALLEL 48FBGA
NVRAM 4Mb 3V 25ns 256K x 16 nvSRAM
Product Comparison
The three parts on the right have similar specifications to CY14B104NA-BA25XI.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Nominal Supply Current
    Memory Type
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Density
    Standby Current-Max
    Access Time (Max)
    Word Size
    Height Seated (Max)
    Length
    Radiation Hardening
    RoHS Status
    Lead Free
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Operating Mode
    Surface Mount
    JESD-30 Code
    Memory Density
    Width
    View Compare
  • CY14B104NA-BA25XI
    CY14B104NA-BA25XI
    12 Weeks
    Copper, Silver, Tin
    Surface Mount
    Surface Mount
    48-TFBGA
    48
    -40°C~85°C TA
    Tray
    2011
    e1
    yes
    Active
    3 (168 Hours)
    48
    3A991.B.2.A
    Tin/Silver/Copper (Sn/Ag/Cu)
    8542.32.00.41
    SRAMs
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    260
    1
    3V
    0.75mm
    30
    CY14B104
    48
    3V
    3.6V
    2.7V
    4Mb 256K x 16
    70mA
    Non-Volatile
    NVSRAM
    Parallel
    16b
    256KX16
    16
    25ns
    4 Mb
    0.005A
    25 ns
    16b
    1.2mm
    10mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CY14B101L-SP35XI
    -
    -
    Surface Mount
    Surface Mount
    48-BSSOP (0.295, 7.50mm Width)
    48
    -40°C~85°C TA
    Tube
    2009
    e4
    -
    Obsolete
    3 (168 Hours)
    48
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    8542.32.00.41
    SRAMs
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    DUAL
    260
    1
    3V
    0.635mm
    -
    CY14B101
    48
    3.3V
    3.6V
    2.7V
    1Mb 128K x 8
    60mA
    Non-Volatile
    NVSRAM
    Parallel
    8b
    128KX8
    8
    35ns
    1 Mb
    0.003A
    35 ns
    8b
    2.794mm
    15.875mm
    -
    ROHS3 Compliant
    Lead Free
    unknown
    20
    Not Qualified
    ASYNCHRONOUS
    -
    -
    -
    -
  • CY14B116N-BA25XI
    26 Weeks
    -
    -
    Surface Mount
    60-LFBGA
    -
    -40°C~85°C TA
    Tray
    -
    -
    -
    Active
    3 (168 Hours)
    60
    3A991.A.2
    -
    8542.90.00.00
    -
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    NOT SPECIFIED
    1
    3V
    0.75mm
    -
    -
    -
    -
    3.6V
    2.7V
    16Mb 1M x 16
    -
    Non-Volatile
    NVSRAM
    Parallel
    -
    1MX16
    16
    25ns
    -
    -
    25 ns
    -
    1.2mm
    18mm
    -
    ROHS3 Compliant
    -
    -
    NOT SPECIFIED
    -
    ASYNCHRONOUS
    YES
    R-PBGA-B60
    16777216 bit
    10mm
  • CY14B104L-ZS45XI
    -
    -
    -
    Surface Mount
    44-TSOP (0.400, 10.16mm Width)
    -
    -40°C~85°C TA
    Tube
    -
    -
    -
    Obsolete
    3 (168 Hours)
    44
    -
    -
    -
    -
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    DUAL
    -
    1
    3V
    0.8mm
    -
    -
    44
    -
    3.6V
    2.7V
    4Mb 512K x 8
    -
    Non-Volatile
    NVSRAM
    Parallel
    -
    512KX8
    8
    45ns
    -
    -
    45 ns
    -
    1.194mm
    18.415mm
    -
    ROHS3 Compliant
    -
    unknown
    -
    COMMERCIAL
    ASYNCHRONOUS
    YES
    R-PDSO-G44
    4194304 bit
    10.16mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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