CY14B104LA-BA45XIT

Cypress Semiconductor Corp CY14B104LA-BA45XIT

Part Number:
CY14B104LA-BA45XIT
Manufacturer:
Cypress Semiconductor Corp
Ventron No:
3234446-CY14B104LA-BA45XIT
Description:
IC NVSRAM 4MBIT 45NS 48FBGA
ECAD Model:
Datasheet:
CY14B104LA-BA45XIT

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Specifications
Cypress Semiconductor Corp CY14B104LA-BA45XIT technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B104LA-BA45XIT.
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Copper, Silver, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    48-TFBGA
  • Number of Pins
    48
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e1
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    48
  • ECCN Code
    3A991.B.2.A
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • HTS Code
    8542.32.00.41
  • Subcategory
    SRAMs
  • Technology
    NVSRAM (Non-Volatile SRAM)
  • Voltage - Supply
    2.7V~3.6V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    3V
  • Terminal Pitch
    0.75mm
  • Reflow Temperature-Max (s)
    30
  • Base Part Number
    CY14B104
  • Pin Count
    48
  • Qualification Status
    Not Qualified
  • Operating Supply Voltage
    3V
  • Supply Voltage-Max (Vsup)
    3.6V
  • Supply Voltage-Min (Vsup)
    2.7V
  • Memory Size
    4Mb 512K x 8
  • Nominal Supply Current
    52mA
  • Memory Type
    Non-Volatile
  • Operating Mode
    ASYNCHRONOUS
  • Memory Format
    NVSRAM
  • Memory Interface
    Parallel
  • Data Bus Width
    8b
  • Organization
    512KX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    45ns
  • Density
    4 Mb
  • Standby Current-Max
    0.005A
  • Access Time (Max)
    45 ns
  • Word Size
    8b
  • Height Seated (Max)
    1.2mm
  • Length
    10mm
  • RoHS Status
    ROHS3 Compliant
Description
CY14B104LA-BA45XIT Overview
Cypress Semiconductor Corp is a well-known brand in the semiconductor industry, known for its high-quality and reliable products. One of their popular offerings is the Memory chip, which falls under the Memory category. This specific chip is designed to meet the JESD-609 Code e1, indicating its compliance with industry standards and regulations. It also has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand exposure to moisture for up to 168 hours without any adverse effects on its performance. This is an important parameter to consider, especially for electronic components that may be exposed to varying environmental conditions. The chip has a total of 48 terminations, making it suitable for a wide range of applications. It can handle a peak reflow temperature of 260 degrees Celsius, ensuring its durability and stability even under high temperatures. The Supply Voltage for this chip is 3V, making it compatible with most electronic devices. It also has a Nominal Supply Current of 52mA, indicating its low power consumption and efficiency. This makes it a suitable option for devices that require minimal power consumption, such as portable electronics. In terms of its operating mode, this Memory chip operates in an ASYNCHRONOUS manner, meaning it can function independently without the need for external synchronization. This makes it a versatile and convenient choice for various applications. The Memory chip has a width of 8, indicating its ability to store and process data in 8-bit increments. This is an important parameter to consider when selecting a memory chip, as it determines the amount of data that can be stored and accessed at a time. When it comes to power consumption, the chip has a standby current of 0.005A, making it an energy-efficient option. This is beneficial for devices that require long periods of standby time, as it helps conserve battery life. Lastly, the chip has a maximum seated height of 1.2mm, making it a compact and space-saving component. This is an important parameter, especially for devices with limited space for electronic components. Overall, the Cypress Semiconductor Corp Memory chip offers a wide range of parameters that make it a versatile and reliable option for various applications. Its compliance with industry standards, low power consumption, and compact size make it a popular choice among electronic manufacturers. With its high performance and durability, this chip is sure to meet the demands of the ever-evolving technology industry.

CY14B104LA-BA45XIT Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3V

CY14B104LA-BA45XIT Applications
There are a lot of Cypress Semiconductor Corp CY14B104LA-BA45XIT Memory applications.

mainframes
hard disk drive (HDD)
personal computers
Camcorders
eDRAM
personal digital assistants
multimedia computers
eSRAM
DVD disk buffer
cell phones
CY14B104LA-BA45XIT More Descriptions
Nvram Nvsram Parallel 4MBIT 3V 48-PIN Fbga T/r / IC Nvsram 4MBIT 45NS 48FBGA
Nonvolatile SRAM, BGA-48, RoHSCypress Semiconductor SCT
Product Description Demo for Development.
Product Comparison
The three parts on the right have similar specifications to CY14B104LA-BA45XIT.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Nominal Supply Current
    Memory Type
    Operating Mode
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Density
    Standby Current-Max
    Access Time (Max)
    Word Size
    Height Seated (Max)
    Length
    RoHS Status
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Lead Free
    Surface Mount
    JESD-30 Code
    Memory Density
    Width
    Supplier Device Package
    Access Time
    View Compare
  • CY14B104LA-BA45XIT
    CY14B104LA-BA45XIT
    16 Weeks
    Copper, Silver, Tin
    Surface Mount
    Surface Mount
    48-TFBGA
    48
    -40°C~85°C TA
    Tape & Reel (TR)
    2011
    e1
    Active
    3 (168 Hours)
    48
    3A991.B.2.A
    Tin/Silver/Copper (Sn/Ag/Cu)
    8542.32.00.41
    SRAMs
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    260
    1
    3V
    0.75mm
    30
    CY14B104
    48
    Not Qualified
    3V
    3.6V
    2.7V
    4Mb 512K x 8
    52mA
    Non-Volatile
    ASYNCHRONOUS
    NVSRAM
    Parallel
    8b
    512KX8
    8
    45ns
    4 Mb
    0.005A
    45 ns
    8b
    1.2mm
    10mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CY14B101L-SP35XI
    -
    -
    Surface Mount
    Surface Mount
    48-BSSOP (0.295, 7.50mm Width)
    48
    -40°C~85°C TA
    Tube
    2009
    e4
    Obsolete
    3 (168 Hours)
    48
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    8542.32.00.41
    SRAMs
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    DUAL
    260
    1
    3V
    0.635mm
    -
    CY14B101
    48
    Not Qualified
    3.3V
    3.6V
    2.7V
    1Mb 128K x 8
    60mA
    Non-Volatile
    ASYNCHRONOUS
    NVSRAM
    Parallel
    8b
    128KX8
    8
    35ns
    1 Mb
    0.003A
    35 ns
    8b
    2.794mm
    15.875mm
    ROHS3 Compliant
    unknown
    20
    Lead Free
    -
    -
    -
    -
    -
    -
  • CY14B116N-BA25XIT
    26 Weeks
    -
    -
    Surface Mount
    60-LFBGA
    -
    -40°C~85°C TA
    Tape & Reel (TR)
    -
    -
    Active
    3 (168 Hours)
    60
    3A991.A.2
    -
    8542.90.00.00
    -
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    NOT SPECIFIED
    1
    3V
    0.75mm
    -
    -
    -
    -
    -
    3.6V
    2.7V
    16Mb 1M x 16
    -
    Non-Volatile
    ASYNCHRONOUS
    NVSRAM
    Parallel
    -
    1MX16
    16
    25ns
    -
    -
    25 ns
    -
    1.2mm
    18mm
    ROHS3 Compliant
    -
    NOT SPECIFIED
    -
    YES
    R-PBGA-B60
    16777216 bit
    10mm
    -
    -
  • CY14B104L-BA45XC
    -
    -
    -
    Surface Mount
    48-TFBGA
    -
    0°C~70°C TA
    Tube
    -
    -
    Obsolete
    3 (168 Hours)
    -
    -
    -
    -
    -
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4Mb 512K x 8
    -
    Non-Volatile
    -
    NVSRAM
    Parallel
    -
    -
    -
    45ns
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    48-FBGA (6x10)
    45ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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