Cypress Semiconductor Corp CY14B104LA-BA45XIT
- Part Number:
- CY14B104LA-BA45XIT
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3234446-CY14B104LA-BA45XIT
- Description:
- IC NVSRAM 4MBIT 45NS 48FBGA
- Datasheet:
- CY14B104LA-BA45XIT
Cypress Semiconductor Corp CY14B104LA-BA45XIT technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B104LA-BA45XIT.
- Factory Lead Time16 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN Code3A991.B.2.A
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8542.32.00.41
- SubcategorySRAMs
- TechnologyNVSRAM (Non-Volatile SRAM)
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Reflow Temperature-Max (s)30
- Base Part NumberCY14B104
- Pin Count48
- Qualification StatusNot Qualified
- Operating Supply Voltage3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size4Mb 512K x 8
- Nominal Supply Current52mA
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatNVSRAM
- Memory InterfaceParallel
- Data Bus Width8b
- Organization512KX8
- Memory Width8
- Write Cycle Time - Word, Page45ns
- Density4 Mb
- Standby Current-Max0.005A
- Access Time (Max)45 ns
- Word Size8b
- Height Seated (Max)1.2mm
- Length10mm
- RoHS StatusROHS3 Compliant
CY14B104LA-BA45XIT Overview
Cypress Semiconductor Corp is a well-known brand in the semiconductor industry, known for its high-quality and reliable products. One of their popular offerings is the Memory chip, which falls under the Memory category. This specific chip is designed to meet the JESD-609 Code e1, indicating its compliance with industry standards and regulations. It also has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand exposure to moisture for up to 168 hours without any adverse effects on its performance. This is an important parameter to consider, especially for electronic components that may be exposed to varying environmental conditions. The chip has a total of 48 terminations, making it suitable for a wide range of applications. It can handle a peak reflow temperature of 260 degrees Celsius, ensuring its durability and stability even under high temperatures. The Supply Voltage for this chip is 3V, making it compatible with most electronic devices. It also has a Nominal Supply Current of 52mA, indicating its low power consumption and efficiency. This makes it a suitable option for devices that require minimal power consumption, such as portable electronics. In terms of its operating mode, this Memory chip operates in an ASYNCHRONOUS manner, meaning it can function independently without the need for external synchronization. This makes it a versatile and convenient choice for various applications. The Memory chip has a width of 8, indicating its ability to store and process data in 8-bit increments. This is an important parameter to consider when selecting a memory chip, as it determines the amount of data that can be stored and accessed at a time. When it comes to power consumption, the chip has a standby current of 0.005A, making it an energy-efficient option. This is beneficial for devices that require long periods of standby time, as it helps conserve battery life. Lastly, the chip has a maximum seated height of 1.2mm, making it a compact and space-saving component. This is an important parameter, especially for devices with limited space for electronic components. Overall, the Cypress Semiconductor Corp Memory chip offers a wide range of parameters that make it a versatile and reliable option for various applications. Its compliance with industry standards, low power consumption, and compact size make it a popular choice among electronic manufacturers. With its high performance and durability, this chip is sure to meet the demands of the ever-evolving technology industry.
CY14B104LA-BA45XIT Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3V
CY14B104LA-BA45XIT Applications
There are a lot of Cypress Semiconductor Corp CY14B104LA-BA45XIT Memory applications.
mainframes
hard disk drive (HDD)
personal computers
Camcorders
eDRAM
personal digital assistants
multimedia computers
eSRAM
DVD disk buffer
cell phones
Cypress Semiconductor Corp is a well-known brand in the semiconductor industry, known for its high-quality and reliable products. One of their popular offerings is the Memory chip, which falls under the Memory category. This specific chip is designed to meet the JESD-609 Code e1, indicating its compliance with industry standards and regulations. It also has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand exposure to moisture for up to 168 hours without any adverse effects on its performance. This is an important parameter to consider, especially for electronic components that may be exposed to varying environmental conditions. The chip has a total of 48 terminations, making it suitable for a wide range of applications. It can handle a peak reflow temperature of 260 degrees Celsius, ensuring its durability and stability even under high temperatures. The Supply Voltage for this chip is 3V, making it compatible with most electronic devices. It also has a Nominal Supply Current of 52mA, indicating its low power consumption and efficiency. This makes it a suitable option for devices that require minimal power consumption, such as portable electronics. In terms of its operating mode, this Memory chip operates in an ASYNCHRONOUS manner, meaning it can function independently without the need for external synchronization. This makes it a versatile and convenient choice for various applications. The Memory chip has a width of 8, indicating its ability to store and process data in 8-bit increments. This is an important parameter to consider when selecting a memory chip, as it determines the amount of data that can be stored and accessed at a time. When it comes to power consumption, the chip has a standby current of 0.005A, making it an energy-efficient option. This is beneficial for devices that require long periods of standby time, as it helps conserve battery life. Lastly, the chip has a maximum seated height of 1.2mm, making it a compact and space-saving component. This is an important parameter, especially for devices with limited space for electronic components. Overall, the Cypress Semiconductor Corp Memory chip offers a wide range of parameters that make it a versatile and reliable option for various applications. Its compliance with industry standards, low power consumption, and compact size make it a popular choice among electronic manufacturers. With its high performance and durability, this chip is sure to meet the demands of the ever-evolving technology industry.
CY14B104LA-BA45XIT Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3V
CY14B104LA-BA45XIT Applications
There are a lot of Cypress Semiconductor Corp CY14B104LA-BA45XIT Memory applications.
mainframes
hard disk drive (HDD)
personal computers
Camcorders
eDRAM
personal digital assistants
multimedia computers
eSRAM
DVD disk buffer
cell phones
CY14B104LA-BA45XIT More Descriptions
Nvram Nvsram Parallel 4MBIT 3V 48-PIN Fbga T/r / IC Nvsram 4MBIT 45NS 48FBGA
Nonvolatile SRAM, BGA-48, RoHSCypress Semiconductor SCT
Product Description Demo for Development.
Nonvolatile SRAM, BGA-48, RoHSCypress Semiconductor SCT
Product Description Demo for Development.
The three parts on the right have similar specifications to CY14B104LA-BA45XIT.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNominal Supply CurrentMemory TypeOperating ModeMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthWrite Cycle Time - Word, PageDensityStandby Current-MaxAccess Time (Max)Word SizeHeight Seated (Max)LengthRoHS StatusReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Lead FreeSurface MountJESD-30 CodeMemory DensityWidthSupplier Device PackageAccess TimeView Compare
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CY14B104LA-BA45XIT16 WeeksCopper, Silver, TinSurface MountSurface Mount48-TFBGA48-40°C~85°C TATape & Reel (TR)2011e1Active3 (168 Hours)483A991.B.2.ATin/Silver/Copper (Sn/Ag/Cu)8542.32.00.41SRAMsNVSRAM (Non-Volatile SRAM)2.7V~3.6VBOTTOM26013V0.75mm30CY14B10448Not Qualified3V3.6V2.7V4Mb 512K x 852mANon-VolatileASYNCHRONOUSNVSRAMParallel8b512KX8845ns4 Mb0.005A45 ns8b1.2mm10mmROHS3 Compliant----------
-
--Surface MountSurface Mount48-BSSOP (0.295, 7.50mm Width)48-40°C~85°C TATube2009e4Obsolete3 (168 Hours)48EAR99Nickel/Palladium/Gold (Ni/Pd/Au)8542.32.00.41SRAMsNVSRAM (Non-Volatile SRAM)2.7V~3.6VDUAL26013V0.635mm-CY14B10148Not Qualified3.3V3.6V2.7V1Mb 128K x 860mANon-VolatileASYNCHRONOUSNVSRAMParallel8b128KX8835ns1 Mb0.003A35 ns8b2.794mm15.875mmROHS3 Compliantunknown20Lead Free------
-
26 Weeks--Surface Mount60-LFBGA--40°C~85°C TATape & Reel (TR)--Active3 (168 Hours)603A991.A.2-8542.90.00.00-NVSRAM (Non-Volatile SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED13V0.75mm-----3.6V2.7V16Mb 1M x 16-Non-VolatileASYNCHRONOUSNVSRAMParallel-1MX161625ns--25 ns-1.2mm18mmROHS3 Compliant-NOT SPECIFIED-YESR-PBGA-B6016777216 bit10mm--
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---Surface Mount48-TFBGA-0°C~70°C TATube--Obsolete3 (168 Hours)-----NVSRAM (Non-Volatile SRAM)2.7V~3.6V------------4Mb 512K x 8-Non-Volatile-NVSRAMParallel---45ns------Non-RoHS Compliant-------48-FBGA (6x10)45ns
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