CSD18543Q3A

Texas Instruments CSD18543Q3A

Part Number:
CSD18543Q3A
Manufacturer:
Texas Instruments
Ventron No:
4538978-CSD18543Q3A
Description:
60-V, N channel NexFET? power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm
ECAD Model:
Datasheet:
csd18543q3a

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Specifications
Texas Instruments CSD18543Q3A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18543Q3A.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Surface Mount
    YES
  • Number of Pins
    8
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    AVALANCHE RATED
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Base Part Number
    CSD18543
  • Number of Elements
    1
  • Number of Channels
    1
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    66W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9 ns
  • Transistor Application
    SWITCHING
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    8 ns
  • Continuous Drain Current (ID)
    35A
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    55 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Resistance
    8.1mOhm
  • Feedback Cap-Max (Crss)
    6.2 pF
  • Height
    900μm
  • Length
    3.3mm
  • Width
    3.3mm
  • Thickness
    800μm
  • RoHS Status
    ROHS3 Compliant
Description

CSD18543Q3A Description


CSD18543Q3A Power MOSFET is designed to minimize losses in power conversion applications. CSD18543Q3A MOSFET has the following characteristic: Low-Thermal Resistance, Avalanche Rated, Lead Free, RoHS Compliant, Halogen Free. CSD18543Q3A IC is suitable for Solid State Relay Switch, DC-DC Conversion, Secondary Side Synchronous Rectifier, Isolated Converter Primary Side Switch, as well as Motor Control.


CSD18543Q3A Features


Ultra-Low Qg and Qgd
Low RDS(on)
Low-Thermal Resistance
Avalanche Rated
Lead Free
RoHS Compliant
Halogen Free


CSD18543Q3A Applications


Solid State Relay Switch
DC-DC Conversion
Secondary Side Synchronous Rectifier
Isolated Converter Primary Side Switch
Motor Control
CSD18543Q3A More Descriptions
60-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm 8-VSONP -55 to 150
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-PowerVDFN Surface Mount Tape & Reel (TR) 60V N CH MOSFET
60V N CH MOSFET / CSD18543Q3A 60-V N-Channel NexFET Power MOSFET
Trans MOSFET N-CH Si 60V 35A 8-Pin VSONP EP T/R
N-Channel NexFET Power MOSFET 60V 60A 8-Pin VSONP T/R
Power Field-Effect Transistor, 12A I(D), 60V, 0.0156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to CSD18543Q3A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Terminal Position
    Terminal Form
    Base Part Number
    Number of Elements
    Number of Channels
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Polarity/Channel Type
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Avalanche Energy Rating (Eas)
    FET Technology
    Max Junction Temperature (Tj)
    Drain to Source Resistance
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Thickness
    RoHS Status
    Contact Plating
    Mount
    Transistor Element Material
    Operating Temperature
    Series
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Lead Free
    View Compare
  • CSD18543Q3A
    CSD18543Q3A
    ACTIVE (Last Updated: 4 days ago)
    12 Weeks
    Surface Mount
    8-PowerVDFN
    YES
    8
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    150°C
    -55°C
    AVALANCHE RATED
    DUAL
    FLAT
    CSD18543
    1
    1
    Single
    ENHANCEMENT MODE
    66W
    DRAIN
    9 ns
    SWITCHING
    60V
    4.5V 10V
    ±20V
    N-CHANNEL
    8 ns
    35A
    20V
    55 mJ
    METAL-OXIDE SEMICONDUCTOR
    150°C
    8.1mOhm
    6.2 pF
    900μm
    3.3mm
    3.3mm
    800μm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Surface Mount
    8-PowerTDFN
    -
    8
    Tape & Reel (TR)
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    -
    -
    AVALANCHE RATED
    DUAL
    NO LEAD
    CSD17576
    1
    -
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    5 ns
    SWITCHING
    30V
    4.5V 10V
    ±20V
    -
    23 ns
    100A
    20V
    -
    -
    -
    -
    -
    -
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Gold
    Surface Mount
    SILICON
    -55°C~150°C TJ
    NexFET™
    MOSFET (Metal Oxide)
    260
    not_compliant
    NOT SPECIFIED
    3.1W Ta 125W Tc
    N-Channel
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    16ns
    3 ns
    30A
    0.0029Ohm
    400A
    30V
    Contains Lead
  • CSD17382F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    Tape & Reel (TR)
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    -
    -
    BOTTOM
    NO LEAD
    CSD17382
    1
    1
    Single
    ENHANCEMENT MODE
    500mW
    DRAIN
    59 ns
    SWITCHING
    30V
    1.8V 8V
    -
    -
    279 ns
    2.3A
    10V
    -
    -
    150°C
    -
    -
    350μm
    1.035mm
    635μm
    -
    ROHS3 Compliant
    -
    Surface Mount
    SILICON
    -55°C~150°C TJ
    FemtoFET™
    MOSFET (Metal Oxide)
    -
    -
    -
    500mW Ta
    N-Channel
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    -
    -
    -
    -
    -
    Lead Free
  • CSD13380F3
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    Surface Mount
    3-SMD, No Lead
    YES
    3
    Tape & Reel (TR)
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    -
    -
    BOTTOM
    -
    CSD13380
    1
    -
    Single
    ENHANCEMENT MODE
    -
    -
    -
    SWITCHING
    12V
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    -
    -
    -
    12.5 pF
    -
    690μm
    600μm
    345μm
    ROHS3 Compliant
    -
    -
    SILICON
    -55°C~150°C TJ
    FemtoFET™
    MOSFET (Metal Oxide)
    -
    -
    -
    500mW Ta
    N-Channel
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    -
    2.1A
    0.092Ohm
    -
    12V
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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