Texas Instruments CSD18543Q3A
- Part Number:
- CSD18543Q3A
- Manufacturer:
- Texas Instruments
- Ventron No:
- 4538978-CSD18543Q3A
- Description:
- 60-V, N channel NexFET? power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm
- Datasheet:
- csd18543q3a
Texas Instruments CSD18543Q3A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18543Q3A.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Surface MountYES
- Number of Pins8
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureAVALANCHE RATED
- Terminal PositionDUAL
- Terminal FormFLAT
- Base Part NumberCSD18543
- Number of Elements1
- Number of Channels1
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation66W
- Case ConnectionDRAIN
- Turn On Delay Time9 ns
- Transistor ApplicationSWITCHING
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time8 ns
- Continuous Drain Current (ID)35A
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)55 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- Drain to Source Resistance8.1mOhm
- Feedback Cap-Max (Crss)6.2 pF
- Height900μm
- Length3.3mm
- Width3.3mm
- Thickness800μm
- RoHS StatusROHS3 Compliant
CSD18543Q3A Description
CSD18543Q3A Power MOSFET is designed to minimize losses in power conversion applications. CSD18543Q3A MOSFET has the following characteristic: Low-Thermal Resistance, Avalanche Rated, Lead Free, RoHS Compliant, Halogen Free. CSD18543Q3A IC is suitable for Solid State Relay Switch, DC-DC Conversion, Secondary Side Synchronous Rectifier, Isolated Converter Primary Side Switch, as well as Motor Control.
CSD18543Q3A Features
Ultra-Low Qg and Qgd
Low RDS(on)
Low-Thermal Resistance
Avalanche Rated
Lead Free
RoHS Compliant
Halogen Free
CSD18543Q3A Applications
Solid State Relay Switch
DC-DC Conversion
Secondary Side Synchronous Rectifier
Isolated Converter Primary Side Switch
Motor Control
CSD18543Q3A More Descriptions
60-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm 8-VSONP -55 to 150
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-PowerVDFN Surface Mount Tape & Reel (TR) 60V N CH MOSFET
60V N CH MOSFET / CSD18543Q3A 60-V N-Channel NexFET Power MOSFET
Trans MOSFET N-CH Si 60V 35A 8-Pin VSONP EP T/R
N-Channel NexFET Power MOSFET 60V 60A 8-Pin VSONP T/R
Power Field-Effect Transistor, 12A I(D), 60V, 0.0156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-PowerVDFN Surface Mount Tape & Reel (TR) 60V N CH MOSFET
60V N CH MOSFET / CSD18543Q3A 60-V N-Channel NexFET Power MOSFET
Trans MOSFET N-CH Si 60V 35A 8-Pin VSONP EP T/R
N-Channel NexFET Power MOSFET 60V 60A 8-Pin VSONP T/R
Power Field-Effect Transistor, 12A I(D), 60V, 0.0156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to CSD18543Q3A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureTerminal PositionTerminal FormBase Part NumberNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Polarity/Channel TypeTurn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Avalanche Energy Rating (Eas)FET TechnologyMax Junction Temperature (Tj)Drain to Source ResistanceFeedback Cap-Max (Crss)HeightLengthWidthThicknessRoHS StatusContact PlatingMountTransistor Element MaterialOperating TemperatureSeriesTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinLead FreeView Compare
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CSD18543Q3AACTIVE (Last Updated: 4 days ago)12 WeeksSurface Mount8-PowerVDFNYES8Tape & Reel (TR)e3yesActive1 (Unlimited)5EAR99Matte Tin (Sn)150°C-55°CAVALANCHE RATEDDUALFLATCSD1854311SingleENHANCEMENT MODE66WDRAIN9 nsSWITCHING60V4.5V 10V±20VN-CHANNEL8 ns35A20V55 mJMETAL-OXIDE SEMICONDUCTOR150°C8.1mOhm6.2 pF900μm3.3mm3.3mm800μmROHS3 Compliant------------------------
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ACTIVE (Last Updated: 5 days ago)6 WeeksSurface Mount8-PowerTDFN-8Tape & Reel (TR)e4yesActive1 (Unlimited)5EAR99---AVALANCHE RATEDDUALNO LEADCSD175761-SingleENHANCEMENT MODE3.1WDRAIN5 nsSWITCHING30V4.5V 10V±20V-23 ns100A20V------5mm6mm950μmROHS3 CompliantGoldSurface MountSILICON-55°C~150°C TJNexFET™MOSFET (Metal Oxide)260not_compliantNOT SPECIFIED3.1W Ta 125W TcN-Channel2m Ω @ 25A, 10V1.8V @ 250μA4430pF @ 15V100A Ta32nC @ 4.5V16ns3 ns30A0.0029Ohm400A30VContains Lead
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ACTIVE (Last Updated: 1 day ago)6 WeeksSurface Mount3-XFDFN-3Tape & Reel (TR)-yesActive1 (Unlimited)3EAR99----BOTTOMNO LEADCSD1738211SingleENHANCEMENT MODE500mWDRAIN59 nsSWITCHING30V1.8V 8V--279 ns2.3A10V--150°C--350μm1.035mm635μm-ROHS3 Compliant-Surface MountSILICON-55°C~150°C TJFemtoFET™MOSFET (Metal Oxide)---500mW TaN-Channel64m Ω @ 500mA, 8V1.2V @ 250μA347pF @ 15V2.3A Ta2.7nC @ 4.5V------Lead Free
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ACTIVE (Last Updated: 2 days ago)6 WeeksSurface Mount3-SMD, No LeadYES3Tape & Reel (TR)-yesActive1 (Unlimited)3EAR99----BOTTOM-CSD133801-SingleENHANCEMENT MODE---SWITCHING12V1.8V 4.5V8V--------12.5 pF-690μm600μm345μmROHS3 Compliant--SILICON-55°C~150°C TJFemtoFET™MOSFET (Metal Oxide)---500mW TaN-Channel76m Ω @ 400mA, 4.5V1.3V @ 250μA156pF @ 6V3.6A Ta1.2nC @ 4.5V--2.1A0.092Ohm-12V-
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