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CSD18510KTT

Texas Instruments CSD18510KTT

Part Number:
CSD18510KTT
Manufacturer:
Texas Instruments
Ventron No:
4538913-CSD18510KTT
Description:
40-V, N channel NexFET? power MOSFET, single D2PAK, 1.7 mOhm
ECAD Model:
Datasheet:
csd18510ktt

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Specifications
Texas Instruments CSD18510KTT technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18510KTT.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-4, D2Pak (3 Leads Tab), TO-263AA
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD18510
  • Number of Elements
    1
  • Power Dissipation-Max
    250W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.7m Ω @ 100A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    11400pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    274A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    153nC @ 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    200A
  • Drain-source On Resistance-Max
    0.0026Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • DS Breakdown Voltage-Min
    40V
  • Feedback Cap-Max (Crss)
    551 pF
  • Height
    4.83mm
  • Length
    10.18mm
  • Width
    8.41mm
  • Thickness
    4.44mm
  • RoHS Status
    ROHS3 Compliant
Description
CSD18510KTT    Description
 This 40-V, 1.4-mΩ, D 2PAK (TO-263) NexFET power MOSFET is designed to minimize losses in power conversion applications.
CSD18510KTT     Features
1? Ultra-Low Qg and Qgd ? Low-Thermal Resistance ? Avalanche Rated ? Lead-Free Terminal Plating ? RoHS Compliant ? Halogen Free ? D 2PAK Plastic Package
CSD18510KTT     Applications
? Secondary Side Synchronous Rectifier ? Motor Control

CSD18510KTT More Descriptions
40-V, N channel NexFET™ power MOSFET, single D2PAK, 1.7 mOhm 2-DDPAK/TO-263 -55 to 175
AVR, 8KB FLASH, 512B EE, 512B SRAM - 20MHz, SOIC, IND TEMP, Green, 1.8-5.5V
Trans MOSFET N-CH Si 40V 200A 4-Pin(3 Tab) TO-263 T/R
Product Comparison
The three parts on the right have similar specifications to CSD18510KTT.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Thickness
    RoHS Status
    Contact Plating
    Mount
    Terminal Position
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Lead Free
    Pin Count
    Number of Channels
    Power Dissipation
    Max Junction Temperature (Tj)
    View Compare
  • CSD18510KTT
    CSD18510KTT
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    12 Weeks
    Surface Mount
    TO-263-4, D2Pak (3 Leads Tab), TO-263AA
    YES
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    2 (1 Year)
    2
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    GULL WING
    260
    not_compliant
    NOT SPECIFIED
    CSD18510
    1
    250W Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    1.7m Ω @ 100A, 10V
    2.3V @ 250μA
    11400pF @ 20V
    274A Tc
    153nC @ 10V
    40V
    4.5V 10V
    ±20V
    200A
    0.0026Ohm
    400A
    40V
    551 pF
    4.83mm
    10.18mm
    8.41mm
    4.44mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD16570Q5B
    CSD16570Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Surface Mount
    8-PowerTDFN
    -
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD16570
    1
    3.2W Ta 195W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    -
    0.59m Ω @ 50A, 10V
    1.9V @ 250μA
    14000pF @ 12V
    100A Ta
    250nC @ 10V
    25V
    4.5V 10V
    ±20V
    59A
    -
    400A
    25V
    1290 pF
    -
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Gold
    Surface Mount
    DUAL
    5 ns
    43ns
    72 ns
    156 ns
    100A
    20V
    Contains Lead
    -
    -
    -
    -
    CSD18510KTT vs CSD16570Q5B
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    NO LEAD
    -
    -
    -
    CSD17484
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    30V
    1.8V 8V
    -
    3A
    0.27Ohm
    -
    -
    2.9 pF
    -
    1.035mm
    635μm
    200μm
    ROHS3 Compliant
    -
    Surface Mount
    BOTTOM
    3 ns
    1ns
    4 ns
    11 ns
    3A
    12V
    Lead Free
    3
    -
    -
    -
    CSD18510KTT vs CSD17484F4
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    NO LEAD
    -
    -
    -
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    30V
    1.8V 8V
    -
    -
    -
    -
    -
    -
    350μm
    1.035mm
    635μm
    -
    ROHS3 Compliant
    -
    Surface Mount
    BOTTOM
    59 ns
    -
    -
    279 ns
    2.3A
    10V
    Lead Free
    -
    1
    500mW
    150°C
    CSD18510KTT vs CSD17382F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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