CSD18501Q5A

Texas Instruments CSD18501Q5A

Part Number:
CSD18501Q5A
Manufacturer:
Texas Instruments
Ventron No:
2478222-CSD18501Q5A
Description:
MOSFET N-CH 40V 8SON
ECAD Model:
Datasheet:
csd18501q5a

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Specifications
Texas Instruments CSD18501Q5A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18501Q5A.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 hours ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD18501
  • Number of Elements
    1
  • Power Dissipation-Max
    3.1W Ta 150W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.1W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    4.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.2m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3840pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    22A Ta 100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 10V
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3.4 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    100A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    22A
  • Drain-source On Resistance-Max
    0.0043Ohm
  • Drain to Source Breakdown Voltage
    40V
  • Feedback Cap-Max (Crss)
    23 pF
  • Height
    1.1mm
  • Length
    4.9mm
  • Width
    6mm
  • Thickness
    1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
CSD18501Q5A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3840pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [22A] according to its drain current.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

CSD18501Q5A Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.8V


CSD18501Q5A Applications
There are a lot of Texas Instruments
CSD18501Q5A applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
CSD18501Q5A More Descriptions
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm 8-VSONP -55 to 150
TEXAS INSTRUMENTS TL16C550CPTG4 UART Interface, 1 Channel, 1 Mbps, 3 V, 3.6 V, LQFP, 48 Pins
Mosfet, N-Ch, 40V, 100A, Vson-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0025Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD18501Q5A
Product Comparison
The three parts on the right have similar specifications to CSD18501Q5A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Terminal Form
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Lead Free
    Number of Channels
    Max Junction Temperature (Tj)
    Surface Mount
    View Compare
  • CSD18501Q5A
    CSD18501Q5A
    ACTIVE (Last Updated: 6 hours ago)
    6 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD18501
    1
    3.1W Ta 150W Tc
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    4.7 ns
    N-Channel
    SWITCHING
    3.2m Ω @ 25A, 10V
    2.3V @ 250μA
    3840pF @ 20V
    22A Ta 100A Tc
    50nC @ 10V
    10ns
    4.5V 10V
    ±20V
    3.4 ns
    20 ns
    100A
    1.8V
    20V
    22A
    0.0043Ohm
    40V
    23 pF
    1.1mm
    4.9mm
    6mm
    1mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD17576
    1
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    5 ns
    N-Channel
    SWITCHING
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    16ns
    4.5V 10V
    ±20V
    3 ns
    23 ns
    100A
    -
    20V
    30A
    0.0029Ohm
    -
    -
    -
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    NO LEAD
    not_compliant
    NOT SPECIFIED
    30V
    400A
    30V
    Contains Lead
    -
    -
    -
  • CSD17382F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    DRAIN
    59 ns
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    1.8V 8V
    -
    -
    279 ns
    2.3A
    -
    10V
    -
    -
    -
    -
    350μm
    1.035mm
    635μm
    -
    -
    -
    ROHS3 Compliant
    NO LEAD
    -
    -
    30V
    -
    -
    Lead Free
    1
    150°C
    -
  • CSD13380F3
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    -
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD13380
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    2.1A
    0.092Ohm
    -
    12.5 pF
    -
    690μm
    600μm
    345μm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    12V
    -
    12V
    -
    -
    -
    YES
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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