Texas Instruments CSD18501Q5A
- Part Number:
- CSD18501Q5A
- Manufacturer:
- Texas Instruments
- Ventron No:
- 2478222-CSD18501Q5A
- Description:
- MOSFET N-CH 40V 8SON
- Datasheet:
- csd18501q5a
Texas Instruments CSD18501Q5A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18501Q5A.
- Lifecycle StatusACTIVE (Last Updated: 6 hours ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesNexFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Base Part NumberCSD18501
- Number of Elements1
- Power Dissipation-Max3.1W Ta 150W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.1W
- Case ConnectionDRAIN
- Turn On Delay Time4.7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.2m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id2.3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3840pF @ 20V
- Current - Continuous Drain (Id) @ 25°C22A Ta 100A Tc
- Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3.4 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)100A
- Threshold Voltage1.8V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)22A
- Drain-source On Resistance-Max0.0043Ohm
- Drain to Source Breakdown Voltage40V
- Feedback Cap-Max (Crss)23 pF
- Height1.1mm
- Length4.9mm
- Width6mm
- Thickness1mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
CSD18501Q5A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3840pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [22A] according to its drain current.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
CSD18501Q5A Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.8V
CSD18501Q5A Applications
There are a lot of Texas Instruments
CSD18501Q5A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3840pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [22A] according to its drain current.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
CSD18501Q5A Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.8V
CSD18501Q5A Applications
There are a lot of Texas Instruments
CSD18501Q5A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
CSD18501Q5A More Descriptions
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm 8-VSONP -55 to 150
TEXAS INSTRUMENTS TL16C550CPTG4 UART Interface, 1 Channel, 1 Mbps, 3 V, 3.6 V, LQFP, 48 Pins
Mosfet, N-Ch, 40V, 100A, Vson-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0025Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD18501Q5A
TEXAS INSTRUMENTS TL16C550CPTG4 UART Interface, 1 Channel, 1 Mbps, 3 V, 3.6 V, LQFP, 48 Pins
Mosfet, N-Ch, 40V, 100A, Vson-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0025Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD18501Q5A
The three parts on the right have similar specifications to CSD18501Q5A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Base Part NumberNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthThicknessREACH SVHCRadiation HardeningRoHS StatusTerminal FormReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinLead FreeNumber of ChannelsMax Junction Temperature (Tj)Surface MountView Compare
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CSD18501Q5AACTIVE (Last Updated: 6 hours ago)6 WeeksTinSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJCut Tape (CT)NexFET™e3yesActive1 (Unlimited)5EAR99AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)DUAL260CSD1850113.1W Ta 150W TcSingleENHANCEMENT MODE3.1WDRAIN4.7 nsN-ChannelSWITCHING3.2m Ω @ 25A, 10V2.3V @ 250μA3840pF @ 20V22A Ta 100A Tc50nC @ 10V10ns4.5V 10V±20V3.4 ns20 ns100A1.8V20V22A0.0043Ohm40V23 pF1.1mm4.9mm6mm1mmNo SVHCNoROHS3 Compliant-----------
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ACTIVE (Last Updated: 5 days ago)6 WeeksGoldSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)5EAR99AVALANCHE RATED-MOSFET (Metal Oxide)DUAL260CSD1757613.1W Ta 125W TcSingleENHANCEMENT MODE3.1WDRAIN5 nsN-ChannelSWITCHING2m Ω @ 25A, 10V1.8V @ 250μA4430pF @ 15V100A Ta32nC @ 4.5V16ns4.5V 10V±20V3 ns23 ns100A-20V30A0.0029Ohm---5mm6mm950μm--ROHS3 CompliantNO LEADnot_compliantNOT SPECIFIED30V400A30VContains Lead---
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ACTIVE (Last Updated: 1 day ago)6 Weeks-Surface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™-yesActive1 (Unlimited)3EAR99--MOSFET (Metal Oxide)BOTTOM-CSD173821500mW TaSingleENHANCEMENT MODE500mWDRAIN59 nsN-ChannelSWITCHING64m Ω @ 500mA, 8V1.2V @ 250μA347pF @ 15V2.3A Ta2.7nC @ 4.5V-1.8V 8V--279 ns2.3A-10V----350μm1.035mm635μm---ROHS3 CompliantNO LEAD--30V--Lead Free1150°C-
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ACTIVE (Last Updated: 2 days ago)6 Weeks--Surface Mount3-SMD, No Lead3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™-yesActive1 (Unlimited)3EAR99--MOSFET (Metal Oxide)BOTTOM-CSD133801500mW TaSingleENHANCEMENT MODE---N-ChannelSWITCHING76m Ω @ 400mA, 4.5V1.3V @ 250μA156pF @ 6V3.6A Ta1.2nC @ 4.5V-1.8V 4.5V8V-----2.1A0.092Ohm-12.5 pF-690μm600μm345μm--ROHS3 Compliant---12V-12V---YES
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