Texas Instruments CSD17585F5T
- Part Number:
- CSD17585F5T
- Manufacturer:
- Texas Instruments
- Ventron No:
- 4538918-CSD17585F5T
- Description:
- 30-V, N channel NexFET? power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection
- ECAD Model:
-
- Datasheet:
- csd17585f5
Texas Instruments CSD17585F5T technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17585F5T.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- Mounting TypeSurface Mount
- Package / Case3-SMD, No Lead
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesFemtoFET™
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Base Part NumberCSD17585
- Number of Elements1
- Power Dissipation-Max500mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs27m Ω @ 900mA, 10V
- Vgs(th) (Max) @ Id1.7V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds380pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.9A Ta
- Gate Charge (Qg) (Max) @ Vgs5.1nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)20V
- Feedback Cap-Max (Crss)7.4 pF
- Length1.49mm
- Width730μm
- Thickness338μm
- RoHS StatusROHS3 Compliant
CSD17585F5T Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 380pF @ 15V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
CSD17585F5T Features
a 30V drain to source voltage (Vdss)
CSD17585F5T Applications
There are a lot of Texas Instruments
CSD17585F5T applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 380pF @ 15V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
CSD17585F5T Features
a 30V drain to source voltage (Vdss)
CSD17585F5T Applications
There are a lot of Texas Instruments
CSD17585F5T applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
CSD17585F5T More Descriptions
30-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection
MOSFET, N-CH, 30V, 5.9A, PICOSTAR; Polarité transistor: Canal N; Courant de drain Id: 5.9A; Tension Vds max..: 30V; Résistance Rds(on): 0.022ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.3V; Dissipation de puissance P
Mosfet, N-Ch, 30V, 5.9A, Picostar; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.022Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD17585F5T
MOSFET, N-CH, 30V, 5.9A, PICOSTAR; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:1.4W; Transistor Case Style:PICOSTAR; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:FemtoFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
MOSFET, N-CH, 30V, 5.9A, PICOSTAR; Polarité transistor: Canal N; Courant de drain Id: 5.9A; Tension Vds max..: 30V; Résistance Rds(on): 0.022ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.3V; Dissipation de puissance P
Mosfet, N-Ch, 30V, 5.9A, Picostar; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.022Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD17585F5T
MOSFET, N-CH, 30V, 5.9A, PICOSTAR; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:1.4W; Transistor Case Style:PICOSTAR; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:FemtoFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to CSD17585F5T.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionBase Part NumberNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Feedback Cap-Max (Crss)LengthWidthThicknessRoHS StatusContact PlatingMountJESD-609 CodeAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power DissipationCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinLead FreePin CountView Compare
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CSD17585F5TACTIVE (Last Updated: 2 days ago)6 WeeksSurface Mount3-SMD, No LeadYES3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™yesActive1 (Unlimited)3EAR99MOSFET (Metal Oxide)BOTTOMCSD175851500mW TaSingleENHANCEMENT MODEN-ChannelSWITCHING27m Ω @ 900mA, 10V1.7V @ 250μA380pF @ 15V5.9A Ta5.1nC @ 10V30V4.5V 10V20V7.4 pF1.49mm730μm338μmROHS3 Compliant----------------------- -
ACTIVE (Last Updated: 5 days ago)6 WeeksSurface Mount8-PowerTDFN-8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)5EAR99MOSFET (Metal Oxide)DUALCSD1757613.1W Ta 125W TcSingleENHANCEMENT MODEN-ChannelSWITCHING2m Ω @ 25A, 10V1.8V @ 250μA4430pF @ 15V100A Ta32nC @ 4.5V30V4.5V 10V±20V-5mm6mm950μmROHS3 CompliantGoldSurface Mounte4AVALANCHE RATEDNO LEAD260not_compliantNOT SPECIFIED3.1WDRAIN5 ns16ns3 ns23 ns100A20V30A0.0029Ohm400A30VContains Lead-
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ACTIVE (Last Updated: 1 day ago)6 WeeksSurface Mount3-XFDFN-3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™yesActive1 (Unlimited)3EAR99MOSFET (Metal Oxide)BOTTOMCSD174841500mW TaSingleENHANCEMENT MODEN-ChannelSWITCHING121m Ω @ 500mA, 8V1.1V @ 250μA195pF @ 15V3A Ta1.2nC @ 4.5V30V1.8V 8V-2.9 pF1.035mm635μm200μmROHS3 Compliant-Surface Mount--NO LEAD-----3 ns1ns4 ns11 ns3A12V3A0.27Ohm--Lead Free3
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ACTIVE (Last Updated: 2 days ago)6 WeeksSurface Mount3-SMD, No LeadYES3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™yesActive1 (Unlimited)3EAR99MOSFET (Metal Oxide)BOTTOMCSD133801500mW TaSingleENHANCEMENT MODEN-ChannelSWITCHING76m Ω @ 400mA, 4.5V1.3V @ 250μA156pF @ 6V3.6A Ta1.2nC @ 4.5V12V1.8V 4.5V8V12.5 pF690μm600μm345μmROHS3 Compliant----------------2.1A0.092Ohm-12V--
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40-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm
-
12-V, N channel NexFET? power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection
-
30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm
-
25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm
-
40-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm
-
30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6mm, 128 mOhm, gate ESD protection
-
30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection
-
12-V, N channel NexFET? power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
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