MITSUBISHI CM200DY-12H
- Part Number:
- CM200DY-12H
- Manufacturer:
- MITSUBISHI
- Ventron No:
- 5661635-CM200DY-12H
- Description:
- HIGH POWER SWITCHING USE INSULATED TYPE
- Datasheet:
- CM200DY-12H
The CM200DY-12H is HIGH POWER SWITCHING USE INSULATED TYPE , it is part of series. they are designed to work as Modules.CM200DY-12H with pin details manufactured by MITSUBISHI. The CM200DY-12H is available in Package,it is part of the electronic component Chips.that includes Series. they are designed to operate as Modules.it is with Operating Temperature .CM200DY-12H with original stock manufactured by MITSUBISHI. The CM200DY-12H is available in Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of CM200DY-12His designed to work in , it's Operating Temperature is .The CM200DY-12H is available in Package, is part of the Modules and belong to Discrete Semiconductor Products.CM200DY-12H with EDA / CAD Models manufactured by MITSUBISHI. The CM200DY-12H is available in Package, is part of the Discrete Semiconductor Products.The CM200DY-12H is Modules with package manufactured by MITSUBISHI. The CM200DY-12H is available in Package, is part of the HIGH POWER SWITCHING USE INSULATED TYPE.
CM200DY-12H More Descriptions
IGBT MOD DUAL 600V 200A H SER
IGBT POWER TRANSISTOR MODULE
IGBT MODULE, DUAL, 600V, 200A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:780W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to 150°C; Transistor Case Style:Module; No. of Pins:7; Current Ic Continuous a Max:200A; Package / Case:Module; Power Dissipation Max:780W; Power Dissipation Pd:780W; Transistor Type:IGBT Module
IGBT POWER TRANSISTOR MODULE
IGBT MODULE, DUAL, 600V, 200A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:780W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to 150°C; Transistor Case Style:Module; No. of Pins:7; Current Ic Continuous a Max:200A; Package / Case:Module; Power Dissipation Max:780W; Power Dissipation Pd:780W; Transistor Type:IGBT Module
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