Cree/Wolfspeed CGH09120F
- Part Number:
- CGH09120F
- Manufacturer:
- Cree/Wolfspeed
- Ventron No:
- 3813528-CGH09120F
- Description:
- RF MOSFET HEMT 28V 440095
- Datasheet:
- CGH09120F
Cree/Wolfspeed CGH09120F technical specifications, attributes, parameters and parts with similar specifications to Cree/Wolfspeed CGH09120F.
- Factory Lead Time8 Weeks
- Package / Case440095
- Supplier Device Package440095
- PackagingTray
- SeriesGaN
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated84V
- Frequency2.5GHz
- Current - Test1.2A
- Transistor TypeHEMT
- Gain21.5dB
- Power - Output120W
- Voltage - Test28V
- RoHS StatusRoHS Compliant
CGH09120F Overview
This product is manufactured by Cree/Wolfspeed and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet CGH09120F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of CGH09120F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Cree/Wolfspeed and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet CGH09120F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of CGH09120F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
CGH09120F More Descriptions
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSMWolfspeed
Trans RF MOSFET N-CH 120V 12A 3-Pin Case 440095
Aerospace & Defense, 28 V, 2.5 GHz, 120W, Flange, RoHSWolfspeed SCT
120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSMWolfspeed
Trans RF MOSFET N-CH 120V 12A 3-Pin Case 440095
Aerospace & Defense, 28 V, 2.5 GHz, 120W, Flange, RoHSWolfspeed SCT
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