Nexperia USA Inc. BUK9Y7R6-40E,115

Name: BUK9Y7R6-40E,115
Brand: Nexperia USA Inc.
SKU: 3586372-BUK9Y7R6-40E,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK9Y7R6-40E,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 3586372-BUK9Y7R6-40E,115

Description:: MOSFET N-CH 40V LFPAK

ECAD Model:

Datasheet:: BUK9Y7R6-40E,115

Specifications

Nexperia USA Inc. BUK9Y7R6-40E,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9Y7R6-40E,115.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Surface Mount
YES
Number of Pins
4
Material
Plastic
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
Tin (Sn)
Color
Black
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Pin Count
4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
95W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
11.3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2403pF @ 25V
Current - Continuous Drain (Id) @ 25°C
79A Tc
Gate Charge (Qg) (Max) @ Vgs
16.4nC @ 5V
Rise Time
20.9ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±10V
Fall Time (Typ)
16.6 ns
Turn-Off Delay Time
22.7 ns
Continuous Drain Current (ID)
79A
JEDEC-95 Code
MO-235
Gate to Source Voltage (Vgs)
15V
Max Dual Supply Voltage
40V
Drain-source On Resistance-Max
0.0076Ohm
Drain to Source Breakdown Voltage
40V
Diameter
44.958mm
Height
21.1074mm
RoHS Status
ROHS3 Compliant

Description

BUK9Y7R6-40E,115 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2403pF @ 25V.This device conducts a continuous drain current (ID) of 79A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 22.7 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11.3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 15V.With 40V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

BUK9Y7R6-40E,115 Features
a continuous drain current (ID) of 79A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 22.7 ns

BUK9Y7R6-40E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y7R6-40E,115 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

BUK9Y7R6-40E,115 More Descriptions

BUK9Y7R6-40E - N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56
Trans MOSFET N-CH 40V 79A Automotive 5-Pin(4 Tab) LFPAK T/R
Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:79A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:95W; No. of Pins:4Pins RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to BUK9Y7R6-40E,115.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Color

Additional Feature

Technology

Terminal Form

Reach Compliance Code

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Diameter

Height

RoHS Status

Supplier Device Package

Drain to Source Voltage (Vdss)

Transistor Element Material

ECCN Code

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
BUK9Y7R6-40E,115

Nexperia USA Inc.

12 Weeks

Surface Mount

SC-100, SOT-669

YES

4

Plastic

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101

2013

e3

Active

1 (Unlimited)

4

Tin (Sn)

Black

AVALANCHE RATED

MOSFET (Metal Oxide)

GULL WING

not_compliant

4

1

1

95W Tc

Single

ENHANCEMENT MODE

DRAIN

11.3 ns

N-Channel

SWITCHING

6m Ω @ 20A, 10V

2.1V @ 1mA

2403pF @ 25V

79A Tc

16.4nC @ 5V

20.9ns

5V 10V

±10V

16.6 ns

22.7 ns

79A

MO-235

15V

40V

0.0076Ohm

40V

44.958mm

21.1074mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK9515-60E,127

NXP USA Inc.

-

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

-

Obsolete

3 (168 Hours)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

96W Tc

-

-

-

-

N-Channel

-

13mOhm @ 15A, 10V

2.1V @ 1mA

2.651pF @ 25V

54A Tc

20.5nC @ 5V

-

5V 10V

±10V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

TO-220AB

60V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BUK9Y7R6-40E,115 vs BUK9515-60E,127
BUK9516-75B,127

NXP USA Inc.

-

Through Hole

TO-220-3

NO

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

2000

e3

Obsolete

1 (Unlimited)

3

Tin (Sn)

-

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

-

-

3

1

-

157W Tc

-

ENHANCEMENT MODE

DRAIN

-

N-Channel

SWITCHING

14m Ω @ 25A, 10V

2V @ 1mA

4034pF @ 25V

67A Tc

35nC @ 5V

-

4.5V 10V

±15V

-

-

-

TO-220AB

-

-

0.018Ohm

-

-

-

ROHS3 Compliant

-

75V

SILICON

EAR99

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

67A

270A

75V

140 mJ

BUK9Y7R6-40E,115 vs BUK9516-75B,127
BUK9520-55A,127

NXP USA Inc.

-

Through Hole

TO-220-3

NO

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

2010

e3

Obsolete

1 (Unlimited)

3

Matte Tin (Sn)

-

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

-

-

3

1

-

118W Tc

-

ENHANCEMENT MODE

DRAIN

-

N-Channel

SWITCHING

18m Ω @ 25A, 10V

2V @ 1mA

2210pF @ 25V

54A Tc

-

-

4.5V 10V

±10V

-

-

-

TO-220AB

-

-

0.021Ohm

-

-

-

ROHS3 Compliant

-

55V

SILICON

EAR99

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

54A

217A

55V

115 mJ

BUK9Y7R6-40E,115 vs BUK9520-55A,127