Nexperia USA Inc. BUK7M17-80EX

Name: BUK7M17-80EX
Brand: Nexperia USA Inc.
SKU: 2485273-BUK7M17-80EX
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK7M17-80EX

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2485273-BUK7M17-80EX

Description:: MOSFET N-CH 80V MLFPAK

ECAD Model:

Datasheet:: BUK7M17-80EX

Specifications

Nexperia USA Inc. BUK7M17-80EX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK7M17-80EX.

Factory Lead Time
26 Weeks
Mounting Type
Surface Mount
Package / Case
SOT-1210, 8-LFPAK33
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
R-PSSO-G4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
79W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
17m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2031pF @ 25V
Current - Continuous Drain (Id) @ 25°C
43A Tc
Gate Charge (Qg) (Max) @ Vgs
29.6nC @ 10V
Drain to Source Voltage (Vdss)
80V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
43A
Drain-source On Resistance-Max
0.017Ohm
Pulsed Drain Current-Max (IDM)
173A
DS Breakdown Voltage-Min
80V
Avalanche Energy Rating (Eas)
47.4 mJ
RoHS Status
ROHS3 Compliant

Description

BUK7M17-80EX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 47.4 mJ.A device's maximum input capacitance is 2031pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 43A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 173A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 80V.To operate this transistor, you need to apply a 80V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

BUK7M17-80EX Features
the avalanche energy rating (Eas) is 47.4 mJ
based on its rated peak drain current 173A.
a 80V drain to source voltage (Vdss)

BUK7M17-80EX Applications
There are a lot of Nexperia USA Inc.
BUK7M17-80EX applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

BUK7M17-80EX More Descriptions

BUK7M17-80E - N-channel 80 V, 17 mΩ standard level MOSFET in LFPAK33
Mosfet, Aec-Q101, N-Ch, 80V, Sot-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.014Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Nexperia BUK7M17-80EX
Trans MOSFET N-CH 80V 43A 8-Pin LFPAK-33 T/R
ELITE PROGRAM PART - BUK7M17-80E/SOT1210/mLFPAK
Power Field-Effect Transistor, 43A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to BUK7M17-80EX.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Reference Standard

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Contact Plating

Number of Pins

JESD-609 Code

ECCN Code

Subcategory

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

FET Feature

Radiation Hardening

View Compare
BUK7M17-80EX

Nexperia USA Inc.

26 Weeks

Surface Mount

SOT-1210, 8-LFPAK33

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101

2016

Active

1 (Unlimited)

4

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

8

AEC-Q101; IEC-60134

R-PSSO-G4

1

SINGLE WITH BUILT-IN DIODE

79W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

17m Ω @ 10A, 10V

4V @ 1mA

2031pF @ 25V

43A Tc

29.6nC @ 10V

80V

10V

±20V

43A

0.017Ohm

173A

80V

47.4 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK7575-55A,127

Nexperia USA Inc.

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

Obsolete

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

62W Tc

-

-

N-Channel

-

75mOhm @ 10A, 10V

4V @ 1mA

483pF @ 25V

20.3A Tc

-

55V

10V

±20V

-

-

-

-

-

ROHS3 Compliant

TO-220AB

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BUK7M17-80EX vs BUK7575-55A,127
BUK7107-40ATC,118

Nexperia USA Inc.

-

Surface Mount

TO-263-5, D2Pak (4 Leads Tab), TO-263BB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2008

Obsolete

1 (Unlimited)

4

MOSFET (Metal Oxide)

-

GULL WING

-

-

5

-

R-PSSO-G4

1

-

272W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

7m Ω @ 50A, 10V

4V @ 1mA

4500pF @ 25V

75A Tc

108nC @ 10V

-

10V

±20V

-

0.007Ohm

-

-

1400 mJ

RoHS Compliant

-

Tin

5

e3

EAR99

FET General Purpose Power

Single

272W

2 μs

5.7μs

6.8 μs

8.9 μs

140A

20V

40V

40V

Temperature Sensing Diode

No

BUK7M17-80EX vs BUK7107-40ATC,118
BUK7508-55A,127

Nexperia USA Inc.

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

Obsolete

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

254W Tc

-

-

N-Channel

-

8mOhm @ 25A, 10V

4V @ 1mA

4.352pF @ 25V

75A Tc

-

55V

10V

±20V

-

-

-

-

-

ROHS3 Compliant

TO-220AB

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BUK7M17-80EX vs BUK7508-55A,127