BSS84DW-7

Diodes Incorporated BSS84DW-7

Part Number:
BSS84DW-7
Manufacturer:
Diodes Incorporated
Ventron No:
3070011-BSS84DW-7
Description:
MOSFET 2P-CH 50V 0.13A SC70-6
ECAD Model:
Datasheet:
BSS84DW-7

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Specifications
Diodes Incorporated BSS84DW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS84DW-7.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Weight
    6.010099mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn85Pb15)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -50V
  • Max Power Dissipation
    300mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    235
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -130mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    BSS84DW
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300mW
  • Turn On Delay Time
    10 ns
  • FET Type
    2 P-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10 Ω @ 100mA, 5V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    45pF @ 25V
  • Drain to Source Voltage (Vdss)
    50V
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    130mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.13A
  • Drain to Source Breakdown Voltage
    -50V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1mm
  • Length
    2.2mm
  • Width
    1.35mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
BSS84DW-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet BSS84DW-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSS84DW-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BSS84DW-7 More Descriptions
Transistor - FET Dual P-Channel -50V 200mW
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2P-CH 50V 0.13A SC70-6
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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