Diodes Incorporated BSS84DW-7
- Part Number:
- BSS84DW-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070011-BSS84DW-7
- Description:
- MOSFET 2P-CH 50V 0.13A SC70-6
- Datasheet:
- BSS84DW-7
Diodes Incorporated BSS84DW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS84DW-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn85Pb15)
- SubcategoryOther Transistors
- Voltage - Rated DC-50V
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Current Rating-130mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberBSS84DW
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time10 ns
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10 Ω @ 100mA, 5V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds45pF @ 25V
- Drain to Source Voltage (Vdss)50V
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)130mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.13A
- Drain to Source Breakdown Voltage-50V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BSS84DW-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet BSS84DW-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSS84DW-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet BSS84DW-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSS84DW-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BSS84DW-7 More Descriptions
Transistor - FET Dual P-Channel -50V 200mW
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2P-CH 50V 0.13A SC70-6
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2P-CH 50V 0.13A SC70-6
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