BSS8402DW-7-F

Diodes Incorporated BSS8402DW-7-F

Part Number:
BSS8402DW-7-F
Manufacturer:
Diodes Incorporated
Ventron No:
2473250-BSS8402DW-7-F
Description:
MOSFET N/P-CH 60V/50V SC70-6
ECAD Model:
Datasheet:
BSS8402DW-7-F

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Specifications
Diodes Incorporated BSS8402DW-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS8402DW-7-F.
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Weight
    6.010099mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    10Ohm
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    200mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    115mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BSS8402DW
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    200mW
  • Turn On Delay Time
    10 ns
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5 Ω @ 50mA, 5V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    115mA 130mA
  • Drain to Source Voltage (Vdss)
    60V 50V
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    115mA
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.13A
  • Dual Supply Voltage
    60V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    2.5 V
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    1mm
  • Length
    2.2mm
  • Width
    1.35mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BSS8402DW-7-F Description
The BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET BSS8402DW-7-F has been designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the regulator BSS8402DW-7-F in the SOT-363-6 package with 200mW Power Dissipation.

BSS8402DW-7-F Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Totally Lead-Free & Fully RoHS Compliant 

BSS8402DW-7-F Applications
General Purpose Interfacing Switch Power Management Functions Analog Switch
BSS8402DW-7-F More Descriptions
Transistor: P-MOSFET, unipolar, -60V, -115mA, 13.5ohm, 200mW, -55 150 deg.C, SMD, SOT363(SC8
Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A 6-Pin SOT-363 T/R / MOSFET N/P-CH 60V/50V SC70-6
MOSFET, NP, CH, 60V, SOT-363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:115mA; Source Voltage Vds:60V; On Resistance
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, NP, CH, 60V, SOT-363; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 13.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 115mA; Continuous Drain Current Id, P Channel: -130mA; Current Id Max: 800mA; Drain Source Voltage Vds, N Channel: 60V; Drain Source Voltage Vds, P Channel: -50V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 3.2ohm; On Resistance Rds(on), P Channel: 10ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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