Diodes Incorporated BSS8402DW-7-F
- Part Number:
- BSS8402DW-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2473250-BSS8402DW-7-F
- Description:
- MOSFET N/P-CH 60V/50V SC70-6
- Datasheet:
- BSS8402DW-7-F
Diodes Incorporated BSS8402DW-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS8402DW-7-F.
- Factory Lead Time16 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance10Ohm
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation200mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating115mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBSS8402DW
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation200mW
- Turn On Delay Time10 ns
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 50mA, 5V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C115mA 130mA
- Drain to Source Voltage (Vdss)60V 50V
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)115mA
- Threshold Voltage2.5V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.13A
- Dual Supply Voltage60V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs2.5 V
- Feedback Cap-Max (Crss)5 pF
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSS8402DW-7-F Description
The BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET BSS8402DW-7-F has been designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the regulator BSS8402DW-7-F in the SOT-363-6 package with 200mW Power Dissipation.
BSS8402DW-7-F Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Totally Lead-Free & Fully RoHS Compliant
BSS8402DW-7-F Applications
General Purpose Interfacing Switch Power Management Functions Analog Switch
The BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET BSS8402DW-7-F has been designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the regulator BSS8402DW-7-F in the SOT-363-6 package with 200mW Power Dissipation.
BSS8402DW-7-F Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Totally Lead-Free & Fully RoHS Compliant
BSS8402DW-7-F Applications
General Purpose Interfacing Switch Power Management Functions Analog Switch
BSS8402DW-7-F More Descriptions
Transistor: P-MOSFET, unipolar, -60V, -115mA, 13.5ohm, 200mW, -55 150 deg.C, SMD, SOT363(SC8
Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A 6-Pin SOT-363 T/R / MOSFET N/P-CH 60V/50V SC70-6
MOSFET, NP, CH, 60V, SOT-363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:115mA; Source Voltage Vds:60V; On Resistance
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, NP, CH, 60V, SOT-363; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 13.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 115mA; Continuous Drain Current Id, P Channel: -130mA; Current Id Max: 800mA; Drain Source Voltage Vds, N Channel: 60V; Drain Source Voltage Vds, P Channel: -50V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 3.2ohm; On Resistance Rds(on), P Channel: 10ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A 6-Pin SOT-363 T/R / MOSFET N/P-CH 60V/50V SC70-6
MOSFET, NP, CH, 60V, SOT-363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:115mA; Source Voltage Vds:60V; On Resistance
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, NP, CH, 60V, SOT-363; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 13.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 115mA; Continuous Drain Current Id, P Channel: -130mA; Current Id Max: 800mA; Drain Source Voltage Vds, N Channel: 60V; Drain Source Voltage Vds, P Channel: -50V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 3.2ohm; On Resistance Rds(on), P Channel: 10ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
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