Infineon Technologies BSO612CV

Name: BSO612CV
Brand: Infineon Technologies
SKU: 2475305-BSO612CV
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSO612CV

Manufacturer:: Infineon Technologies

Ventron No:: 2475305-BSO612CV

Description:: MOSFET N/P-CH 60V 3A/2A 8SOIC

ECAD Model:

Datasheet:: BSO612CV

Specifications

Infineon Technologies BSO612CV technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSO612CV.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
1999
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
AVALANCHE RATED
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Current Rating
3A
Base Part Number
BSO612
Pin Count
8
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
FET Type
N and P-Channel
Rds On (Max) @ Id, Vgs
120m Ω @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds
340pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3A 2A
Gate Charge (Qg) (Max) @ Vgs
15.5nC @ 10V
Rise Time
60ns
Drain to Source Voltage (Vdss)
60V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
95 ns
Turn-Off Delay Time
145 ns
Continuous Drain Current (ID)
2A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
3A
Drain-source On Resistance-Max
0.12Ohm
Drain to Source Breakdown Voltage
-60V
Avalanche Energy Rating (Eas)
47 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

BSO612CV Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet BSO612CV or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSO612CV. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

BSO612CV More Descriptions

MOSFET N/P-CH 60V 3A/2A 8SOIC
OEMs, CMs ONLY (NO BROKERS)
Contact for details

Product Comparison

The three parts on the right have similar specifications to BSO612CV.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Base Part Number

Pin Count

Number of Elements

Configuration

Operating Mode

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

FET Technology

FET Feature

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Contact Plating

Pbfree Code

Voltage - Rated DC

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Power - Max

Transistor Application

Halogen Free

Max Dual Supply Voltage

Pulsed Drain Current-Max (IDM)

Reference Standard

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

View Compare
BSO612CV

Infineon Technologies

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

1999

e0

Obsolete

1 (Unlimited)

8

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED

Other Transistors

2W

DUAL

GULL WING

235

3A

BSO612

8

2

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ENHANCEMENT MODE

2W

N and P-Channel

120m Ω @ 3A, 10V

4V @ 20μA

340pF @ 25V

3A 2A

15.5nC @ 10V

60ns

60V

N-CHANNEL AND P-CHANNEL

95 ns

145 ns

2A

20V

3A

0.12Ohm

-60V

47 mJ

METAL-OXIDE SEMICONDUCTOR

Standard

No

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSO604NS2XUMA1

Infineon Technologies

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2008

e3

Active

3 (168 Hours)

8

EAR99

-

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

-

2W

-

GULL WING

NOT SPECIFIED

5A

BSO604NS2

8

2

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ENHANCEMENT MODE

-

2 N-Channel (Dual)

35m Ω @ 2.5A, 10V

2V @ 30μA

870pF @ 25V

-

26nC @ 10V

8ns

-

-

-

-

5A

20V

5A

0.044Ohm

-

90 mJ

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

ROHS3 Compliant

Lead Free

8 Weeks

Tin

yes

55V

NOT SPECIFIED

Not Qualified

2W

SWITCHING

Halogen Free

55V

20A

-

-

-

BSO612CV vs BSO604NS2XUMA1
BSO612CVGHUMA1

Infineon Technologies

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

1999

e4

Obsolete

3 (168 Hours)

8

EAR99

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

AVALANCHE RATED

-

2W

DUAL

GULL WING

NOT SPECIFIED

3A

BSO612

-

2

-

ENHANCEMENT MODE

2W

N and P-Channel

120m Ω @ 3A, 10V

4V @ 20μA

340pF @ 25V

3A 2A

15.5nC @ 10V

-

60V

N-CHANNEL AND P-CHANNEL

-

-

2A

20V

3A

-

-

47 mJ

METAL-OXIDE SEMICONDUCTOR

Standard

-

RoHS Compliant

Lead Free

12 Weeks

Tin

-

-

NOT SPECIFIED

-

-

-

Not Halogen Free

-60V

-

AEC-Q101

-

-

BSO612CV vs BSO612CVGHUMA1
BSO615C G

Infineon Technologies

-

-

PG-DSO-8

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N & P Channel

150mΩ @ 2.7A,4.5V;450mΩ @ 1.7A,4.5V

2V @ 20uA,2V @ 450uA

-

-

-

-

60V

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

3.1A2A

2W

BSO612CV vs BSO615C G