BSM180D12P2C101

Rohm Semiconductor BSM180D12P2C101

Part Number:
BSM180D12P2C101
Manufacturer:
Rohm Semiconductor
Ventron No:
2473390-BSM180D12P2C101
Description:
MOSFET 2N-CH 1200V 180A MODULE
ECAD Model:
Datasheet:
BSM180D12P2C101

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Specifications
Rohm Semiconductor BSM180D12P2C101 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor BSM180D12P2C101.
  • Factory Lead Time
    25 Weeks
  • Mount
    Screw
  • Package / Case
    Module
  • Number of Pins
    10
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2012
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Max Power Dissipation
    1.13kW
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-XUFM-X8
  • Number of Elements
    2
  • Configuration
    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Power - Max
    1130W
  • FET Type
    2 N-Channel (Half Bridge)
  • Transistor Application
    SWITCHING
  • Vgs(th) (Max) @ Id
    4V @ 35.2mA
  • Input Capacitance (Ciss) (Max) @ Vds
    23000pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    204A Tc
  • Drain to Source Voltage (Vdss)
    1200V 1.2kV
  • Continuous Drain Current (ID)
    180A
  • Threshold Voltage
    2.7V
  • Gate to Source Voltage (Vgs)
    22V
  • Pulsed Drain Current-Max (IDM)
    360A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Silicon Carbide (SiC)
  • Nominal Vgs
    2.7 V
  • Height
    21.1mm
  • Length
    122mm
  • Width
    45.6mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
Description
BSM180D12P2C101 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet BSM180D12P2C101 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSM180D12P2C101. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BSM180D12P2C101 More Descriptions
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 204 A, 1.2 kV, Module, 10 Pins
Trans MOSFET N-CH 1.2KV 180A Automotive 10-Pin Tray
Compliant Screw 45.6 mm 21.1 mm 122 mm No SVHC 2.7 V Module
SiC-N-Ch-Half-Bridge 1200V 204A C-Pack
MODULE, POWER, SIC, 1200V, 180A
IC REG CTRLR FLYBK ISO 16-TSSOP
Transistor Polarity:n Channel; Drain Source Voltage Vds:1.2Kv; Continuous Drain Current Id:180A; On Resistance Rds(On):-; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:1.13Kw; Product Range:-; Msl:- Rohs Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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