BR35H128F-WCE2

Rohm Semiconductor BR35H128F-WCE2

Part Number:
BR35H128F-WCE2
Manufacturer:
Rohm Semiconductor
Ventron No:
3227807-BR35H128F-WCE2
Description:
IC EEPROM 128KBIT 5MHZ 8SOP
ECAD Model:
Datasheet:
BR35H128F-WCE2

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Specifications
Rohm Semiconductor BR35H128F-WCE2 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor BR35H128F-WCE2.
  • Factory Lead Time
    10 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.173, 4.40mm Width)
  • Surface Mount
    YES
  • Operating Temperature
    -40°C~125°C TA
  • Packaging
    Cut Tape (CT)
  • Published
    2013
  • Series
    Automotive, AEC-Q100
  • Pbfree Code
    yes
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • HTS Code
    8542.32.00.51
  • Technology
    CMOS
  • Voltage - Supply
    2.5V~5.5V
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Number of Functions
    1
  • Supply Voltage
    5V
  • Terminal Pitch
    1.27mm
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    Not Qualified
  • Supply Voltage-Max (Vsup)
    5.5V
  • Power Supplies
    3/5V
  • Supply Voltage-Min (Vsup)
    2.5V
  • Memory Size
    128Kb 16K x 8
  • Memory Type
    Non-Volatile
  • Operating Mode
    SYNCHRONOUS
  • Clock Frequency
    5MHz
  • Supply Current-Max
    0.0055mA
  • Memory Format
    EEPROM
  • Memory Interface
    SPI
  • Organization
    16KX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    5ms
  • Standby Current-Max
    0.00001A
  • Memory Density
    131072 bit
  • Parallel/Serial
    SERIAL
  • Serial Bus Type
    SPI
  • Endurance
    300000 Write/Erase Cycles
  • Data Retention Time-Min
    20
  • Write Protection
    SOFTWARE
  • Height Seated (Max)
    1.6mm
  • Length
    5mm
  • Width
    4.4mm
  • RoHS Status
    ROHS3 Compliant
Description
BR35H128F-WCE2 Overview
The operating temperature for this technology, which was published in 2013, is -40°C to 125°C. It is based on CMOS technology and currently has a qualification status of not qualified. The power supplies for this technology are 3/5V and the memory type is non-volatile. The memory interface is SPI and the write cycle time for both word and page is 5ms. This technology operates on a serial mode rather than parallel, making it more efficient. Additionally, it is important to note that this technology is compliant with the RoHS3 standards, ensuring its environmental friendliness. With these specifications, this technology is suitable for a wide range of applications.

BR35H128F-WCE2 Features
Package / Case: 8-SOIC (0.173, 4.40mm Width)

BR35H128F-WCE2 Applications
There are a lot of ROHM Semiconductor BR35H128F-WCE2 Memory applications.

data buffer
multimedia computers
Cache memory
main computer memory
eSRAM
mainframes
networking
personal computers
nonvolatile BIOS memory
DVD disk buffer
BR35H128F-WCE2 More Descriptions
French Electronic Distributor since 1988
IC EEPROM 128KBIT SPI 5MHZ 8SOP
125°C Operation SPI Bus EEPROM 128Kbit Capacity 16Kx8 Bit Format 2.5V to 5.5V Supply Voltage High Speed Clock Operation up to 5MHz Double Cell 8-Pin SOP Emboss T/R
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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