Texas Instruments BQ4013MA-85

Name: BQ4013MA-85
Brand: Texas Instruments
SKU: 3240538-BQ4013MA-85
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BQ4013MA-85

Manufacturer:: Texas Instruments

Ventron No:: 3240538-BQ4013MA-85

Description:: IC NVSRAM 1MBIT 85NS 32DIP

ECAD Model:

Datasheet:: BQ4013(Y,LY)

Specifications

Texas Instruments BQ4013MA-85 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments BQ4013MA-85.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
32-DIP Module (0.61, 15.49mm)
Number of Pins
32
Operating Temperature
0°C~70°C TA
Packaging
Tube
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
32
ECCN Code
EAR99
Subcategory
SRAMs
Technology
NVSRAM (Non-Volatile SRAM)
Voltage - Supply
4.75V~5.5V
Terminal Position
DUAL
Number of Functions
1
Supply Voltage
5V
Terminal Pitch
2.54mm
Base Part Number
BQ4013
Operating Supply Voltage
5V
Power Supplies
5V
Memory Size
1Mb 128K x 8
Operating Supply Current
50mA
Nominal Supply Current
50mA
Memory Type
Non-Volatile
Memory Format
NVSRAM
Memory Interface
Parallel
Data Bus Width
8b
Organization
128KX8
Memory Width
8
Write Cycle Time - Word, Page
85ns
Density
1 Mb
Standby Current-Max
0.004A
Access Time (Max)
85 ns
Word Size
8b
Height Seated (Max)
9.53mm
Length
42.8mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

BQ4013MA-85 Overview
The mounting type for this electronic component is through hole, which means it can be easily attached to a circuit board using through-hole technology. Its operating temperature range is 0°C to 70°C, making it suitable for a variety of environments. The supply voltage required for this component is 5V. It has a terminal pitch of 2.54mm, allowing for easy connection to other components. The base part number for this component is BQ4013. It is a non-volatile memory type, meaning that it retains its data even when the power is turned off. Its memory interface is parallel, and it has a memory width of 8 bits. The write cycle time for this component is 85ns for both word and page operations. Its density is 1 Mb, making it capable of storing a large amount of data.

BQ4013MA-85 Features
Package / Case: 32-DIP Module (0.61, 15.49mm)
32 Pins
Operating Supply Voltage:5V

BQ4013MA-85 Applications
There are a lot of Texas Instruments
BQ4013MA-85 Memory applications.

mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer

BQ4013MA-85 More Descriptions

128Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 32-DIP MODULE 0 to 70
NVRAM NVSRAM Parallel 1M-Bit 5V 32-Pin DIP Module
EAR99 Through Hole BQ4013 Tube ic memory 85ns 42.8mm 50mA 1Mb
Non-Volative SRAM (NVSRAM) 128Kx8 Nonvolatile SRAM
IC NVSRAM 1MBIT PAR 32DIP MODULE
TEXAS INSTRUMENTS,BQ4013MA-85

Product Comparison

The three parts on the right have similar specifications to BQ4013MA-85.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Technology

Voltage - Supply

Terminal Position

Number of Functions

Supply Voltage

Terminal Pitch

Base Part Number

Operating Supply Voltage

Power Supplies

Memory Size

Operating Supply Current

Nominal Supply Current

Memory Type

Memory Format

Memory Interface

Data Bus Width

Organization

Memory Width

Write Cycle Time - Word, Page

Density

Standby Current-Max

Access Time (Max)

Word Size

Height Seated (Max)

Length

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Access Time

View Compare
BQ4013MA-85

Texas Instruments

Through Hole

Through Hole

32-DIP Module (0.61, 15.49mm)

32

0°C~70°C TA

Tube

no

Obsolete

1 (Unlimited)

32

EAR99

SRAMs

NVSRAM (Non-Volatile SRAM)

4.75V~5.5V

DUAL

1

5V

2.54mm

BQ4013

5V

5V

1Mb 128K x 8

50mA

50mA

Non-Volatile

NVSRAM

Parallel

8b

128KX8

8

85ns

1 Mb

0.004A

85 ns

8b

9.53mm

42.8mm

No

ROHS3 Compliant

Contains Lead

-

-

-
BQ4011YMA-200

ON Semiconductor

-

Through Hole

28-DIP Module (0.61, 15.49mm)

-

0°C~70°C TA

Tube

-

Obsolete

3 (168 Hours)

-

-

-

NVSRAM (Non-Volatile SRAM)

4.5V~5.5V

-

-

-

-

-

-

-

256Kb 32K x 8

-

-

Non-Volatile

NVSRAM

Parallel

-

-

-

200ns

-

-

-

-

-

-

-

ROHS3 Compliant

-

28-DIP Module (18.42x37.72)

200ns

BQ4013MA-85 vs BQ4011YMA-200
BQ4010MA-150

ON Semiconductor

-

Through Hole

28-DIP Module (0.61, 15.49mm)

-

0°C~70°C TA

Tube

-

Obsolete

3 (168 Hours)

-

-

-

NVSRAM (Non-Volatile SRAM)

4.75V~5.5V

-

-

-

-

-

-

-

64Kb 8K x 8

-

-

Non-Volatile

NVSRAM

Parallel

-

-

-

150ns

-

-

-

-

-

-

-

ROHS3 Compliant

-

28-DIP Module (18.42x37.72)

150ns

BQ4013MA-85 vs BQ4010MA-150
BQ4013MA-120

ON Semiconductor

-

Through Hole

32-DIP Module (0.61, 15.49mm)

-

0°C~70°C TA

Tube

-

Obsolete

3 (168 Hours)

-

-

-

NVSRAM (Non-Volatile SRAM)

4.75V~5.5V

-

-

-

-

-

-

-

1Mb 128K x 8

-

-

Non-Volatile

NVSRAM

Parallel

-

-

-

120ns

-

-

-

-

-

-

-

Non-RoHS Compliant

-

32-DIP Module (18.42x42.8)

120ns

BQ4013MA-85 vs BQ4013MA-120