Infineon Technologies BFQ790H6327XTSA1
- Part Number:
- BFQ790H6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3585021-BFQ790H6327XTSA1
- Description:
- RF BIP TRANSISTORS
- Datasheet:
- BFQ790H6327XTSA1
Infineon Technologies BFQ790H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFQ790H6327XTSA1.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- PackagingCut Tape (CT)
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Operating Temperature105°C
- Min Operating Temperature-40°C
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency1.8GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power - Max1.5W
- Halogen FreeHalogen Free
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 250mA 5V
- Gain17dB
- Voltage - Collector Emitter Breakdown (Max)6.1V
- Current - Collector (Ic) (Max)300mA
- Frequency - Transition1.85GHz
- Noise Figure (dB Typ @ f)2.6dB @ 1.8GHz
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BFQ790H6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFQ790H6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFQ790H6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFQ790H6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFQ790H6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BFQ790H6327XTSA1 More Descriptions
Trans RF BJT NPN 6.1V 0.6A 1500mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Rf Trans, Npn, 6.1V, 0.3A, 1.5W, Sot-89; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:6.1V; Transition Frequency Ft:20Ghz; Power Dissipation Pd:1.5W; Dc Collector Current:300Ma; Dc Current Gain Hfe:60Hfe; Rf Transistorrohs Compliant: Yes |Infineon BFQ790H6327XTSA1
The BFQ790 is a single stage driver amplifier with very high linearity. Its output 1dB compression point is 27 dBm. The device is housed in the halogen-free industry standard package SOT89. The high thermal conductivity of silicon substrate and the low thermal resistance of the package add up to a thermal resistance of only 35 K/W, which leads to moderate junction temperatures even at high dissipated power values. The proper die attach with good thermal contact is 100% tested to ensure the thermal properties. The device is based on Infineon's reliable and cost effective NPN SiGe technology running in high volume. The collector design allows safe operation with 5 V supply voltage. The BFQ790 is very rugged. A special collector design prevents from thermal runaway respectively 2nd breakdown, which leads to a high ruggedness against mismatch at the output. The special design of the emitter/base diode makes it robust and yields to a high maximum RF input power capability. | Summary of Features: High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 MHz and 2650 MHz Class A application circuits; High compression point OP1dB of 27 dBm @ 5 V, 250 mA corresponding to 40% collector efficiency; High power gain of 17 dB @ 5V, 250 mA in 1850 MHz Class A application circuit; Low minimum noise figure of 2.6 dB @ 1800 MHz, 5 V, 70 mA; Single stage, intended for external matching; Exceptional ruggedness up to VSWR 10:1 at output; High maximum RF input power PRFinmax of 18 dBm; Safe operation with single 5 V supply; 100% test of proper die attach for reproducible thermal contact; 100% DC and RF tested; Easy to use large signal compact (VBIC) model available; In-house NPN SiGe technology running in very high volume; Easy to use Pb-free (RoHS compliant) and halogen-free industry standard package SOT89, low RTHJS of 35 K/W | Target Applications: High linearity driver or pre-driver in the transmit chain; 2nd or 3rd stage LNA in the receive chain; IF or LO buffer amplifier; Commercial / industrial wireless infrastructure / Base stations / Small cells; Repeaters; Automated test equipment
Rf Trans, Npn, 6.1V, 0.3A, 1.5W, Sot-89; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:6.1V; Transition Frequency Ft:20Ghz; Power Dissipation Pd:1.5W; Dc Collector Current:300Ma; Dc Current Gain Hfe:60Hfe; Rf Transistorrohs Compliant: Yes |Infineon BFQ790H6327XTSA1
The BFQ790 is a single stage driver amplifier with very high linearity. Its output 1dB compression point is 27 dBm. The device is housed in the halogen-free industry standard package SOT89. The high thermal conductivity of silicon substrate and the low thermal resistance of the package add up to a thermal resistance of only 35 K/W, which leads to moderate junction temperatures even at high dissipated power values. The proper die attach with good thermal contact is 100% tested to ensure the thermal properties. The device is based on Infineon's reliable and cost effective NPN SiGe technology running in high volume. The collector design allows safe operation with 5 V supply voltage. The BFQ790 is very rugged. A special collector design prevents from thermal runaway respectively 2nd breakdown, which leads to a high ruggedness against mismatch at the output. The special design of the emitter/base diode makes it robust and yields to a high maximum RF input power capability. | Summary of Features: High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 MHz and 2650 MHz Class A application circuits; High compression point OP1dB of 27 dBm @ 5 V, 250 mA corresponding to 40% collector efficiency; High power gain of 17 dB @ 5V, 250 mA in 1850 MHz Class A application circuit; Low minimum noise figure of 2.6 dB @ 1800 MHz, 5 V, 70 mA; Single stage, intended for external matching; Exceptional ruggedness up to VSWR 10:1 at output; High maximum RF input power PRFinmax of 18 dBm; Safe operation with single 5 V supply; 100% test of proper die attach for reproducible thermal contact; 100% DC and RF tested; Easy to use large signal compact (VBIC) model available; In-house NPN SiGe technology running in very high volume; Easy to use Pb-free (RoHS compliant) and halogen-free industry standard package SOT89, low RTHJS of 35 K/W | Target Applications: High linearity driver or pre-driver in the transmit chain; 2nd or 3rd stage LNA in the receive chain; IF or LO buffer amplifier; Commercial / industrial wireless infrastructure / Base stations / Small cells; Repeaters; Automated test equipment
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