Infineon Technologies BFP540H6327XTSA1

Name: BFP540H6327XTSA1
Brand: Infineon Technologies
SKU: 3585311-BFP540H6327XTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFP540H6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3585311-BFP540H6327XTSA1

Description:: TRANS RF NPN 4.5V 80MA SOT343

ECAD Model:

Datasheet:: BFP540H6327XTSA1

Specifications

Infineon Technologies BFP540H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFP540H6327XTSA1.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-82A, SOT-343
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
30GHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BFP540
Number of Elements
1
Configuration
SINGLE
Test Frequency
1.8GHz
Power Dissipation
250mW
Case Connection
EMITTER
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
4.5V
Max Collector Current
80mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 20mA 3.5V
Collector Emitter Breakdown Voltage
4.5V
Gain
16dB
Voltage - Collector Emitter Breakdown (Max)
5V
Transition Frequency
30000MHz
Max Breakdown Voltage
5V
Collector Base Voltage (VCBO)
14V
Emitter Base Voltage (VEBO)
1V
hFE Min
50
Noise Figure (dB Typ @ f)
0.9dB ~ 1.4dB @ 1.8GHz
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BFP540H6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFP540H6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFP540H6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

BFP540H6327XTSA1 More Descriptions

NPN Silicon RF Transistor for highest gain low noise amplifier at 1, SOT343, RoHSInfineon SCT
Trans RF BJT NPN 4.5V 0.08A 250mW Automotive 4-Pin(3 Tab) SOT-343 T/R
Transistor: NPN, bipolar, RF, 4.5V, 80mA, 250mW, SOT343
BFP540 Series 14 V 80 mA Low Noise Silicon Bipolar RF Transistor - SOT-23-3
NPN Silicon RF Transistor for highest gain low noise amplifier at 1.8 GHz | Summary of Features: Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB; Gold metallization for high reliability; SIEGET 45 - Line; Pb-free (RoHS compliant) package; Qualification report according to AEC-Q101 available | Target Applications: Wireless Communications; For amplifier and oscillator applications in RF Front-end
RF TRANSISTOR, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.5V; Transition Frequency ft: 1.8GHz; Power Dissipation Pd: 250mW; DC Collector Current: 80mA; DC Current Gain hFE: 110hFE; RF Transistor Case: SOT-343; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Associated Gain Ga: 21.5dB; Continuous Collector Current Ic: 80mA; Continuous Collector Current Ic Max: 80mA; Current Ic Continuous a Max: 80mA; Current Ic hFE: 50mA; Gain Bandwidth ft Min: 1.8GHz; Gain Bandwidth ft Typ: 1.8GHz; Hfe Min: 50; No. of Transistors: 1; Noise Figure Typ: 0.9dB; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Output @ Third Order Intercept Point IP3: 24.5dB; Power @ 1dB Gain Compression, P1dB: 11dB; Power Dissipation Ptot Max: 250mW; SMD Marking: ATs; Termination Type: Surface Mount Device; Test Frequency: 1.8GHz; Transistor Case Style: SOT-343; Voltage Vcbo: 14V

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