Infineon Technologies BFP196WH6327XTSA1
- Part Number:
- BFP196WH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2465622-BFP196WH6327XTSA1
- Description:
- TRANS RF NPN 12V 150MA SOT343
- Datasheet:
- BFP196WH6327XTSA1
Infineon Technologies BFP196WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFP196WH6327XTSA1.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-82A, SOT-343
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Additional FeatureLOW NOISE
- Max Power Dissipation700mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency7.5GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBFP196
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation700mW
- Transistor ApplicationAMPLIFIER
- Halogen FreeHalogen Free
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)12V
- Max Collector Current150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA 8V
- Collector Emitter Breakdown Voltage12V
- Gain12.5dB ~ 19dB
- Transition Frequency7500MHz
- Max Breakdown Voltage12V
- Collector Base Voltage (VCBO)20V
- Emitter Base Voltage (VEBO)2V
- Noise Figure (dB Typ @ f)1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Height900μm
- Length2mm
- Width1.25mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BFP196WH6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFP196WH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFP196WH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFP196WH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFP196WH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BFP196WH6327XTSA1 More Descriptions
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN
Trans RF BJT NPN 12V 0.15A 700mW Automotive 4-Pin(3 Tab) SOT-343 T/R
Trans GP BJT NPN 12V 0.15A 4-Pin(3 Tab) SOT-343 T/R - Product that comes on tape, but is not reeled
RF TRANSISTOR, NPN, 12V, 7.5GHZ, SOT-343
RF TRANSISTOR, NPN, 12V, 7.5GHZ, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 7.5GHz; Power Dissipation Pd: 700mW; DC Collector Current: 150mA; DC Current Gain hFE: 70hFE
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 150 / Collector-Emitter Voltage (Vceo) V = 12 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 20 / Emitter-Base Voltage (Vebo) V = 2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 7.5 / Power Dissipation (Pd) mW = 700 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel
NPN Silicon RF Transistor | Summary of Features: For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA; Power amplifier for DECT and PCN systems; fT = 7.5 GHz, F = 1.3 dB at 900 MHz; Pb-free (RoHS compliant) package; Qualification report according to AEC-Q101 available | Target Applications: Wireless Communications; LNA in RF Front-end; For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
Trans RF BJT NPN 12V 0.15A 700mW Automotive 4-Pin(3 Tab) SOT-343 T/R
Trans GP BJT NPN 12V 0.15A 4-Pin(3 Tab) SOT-343 T/R - Product that comes on tape, but is not reeled
RF TRANSISTOR, NPN, 12V, 7.5GHZ, SOT-343
RF TRANSISTOR, NPN, 12V, 7.5GHZ, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 7.5GHz; Power Dissipation Pd: 700mW; DC Collector Current: 150mA; DC Current Gain hFE: 70hFE
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 150 / Collector-Emitter Voltage (Vceo) V = 12 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 20 / Emitter-Base Voltage (Vebo) V = 2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 7.5 / Power Dissipation (Pd) mW = 700 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel
NPN Silicon RF Transistor | Summary of Features: For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA; Power amplifier for DECT and PCN systems; fT = 7.5 GHz, F = 1.3 dB at 900 MHz; Pb-free (RoHS compliant) package; Qualification report according to AEC-Q101 available | Target Applications: Wireless Communications; LNA in RF Front-end; For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
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