NXP USA Inc. BFG67/X,215
- Part Number:
- BFG67/X,215
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3585004-BFG67/X,215
- Description:
- TRANS RF NPN 10V 8GHZ SOT143R
- Datasheet:
- BFG67,BFG67/X(R)
NXP USA Inc. BFG67/X,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFG67/X,215.
- Mounting TypeSurface Mount
- Package / CaseTO-253-4, TO-253AA
- Supplier Device PackageSOT-143B
- Operating Temperature175°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max380mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 15mA 5V
- Voltage - Collector Emitter Breakdown (Max)10V
- Current - Collector (Ic) (Max)50mA
- Frequency - Transition8GHz
- Noise Figure (dB Typ @ f)1.3dB @ 1GHz
- RoHS StatusROHS3 Compliant
Description: The Rochester Electronics BFG67/X,215 is a NPN Bipolar Junction Transistor (BJT) designed for RF applications. It is housed in a SOT143R package and has a maximum voltage rating of 10V. It is capable of operating at frequencies up to 8GHz.
Features:
- NPN Bipolar Junction Transistor (BJT)
- SOT143R package
- Maximum voltage rating of 10V
- Operating frequency up to 8GHz
Applications:
- RF amplifiers
- RF switches
- RF mixers
- RF oscillators
- RF detectors
Features:
- NPN Bipolar Junction Transistor (BJT)
- SOT143R package
- Maximum voltage rating of 10V
- Operating frequency up to 8GHz
Applications:
- RF amplifiers
- RF switches
- RF mixers
- RF oscillators
- RF detectors
BFG67/X,215 More Descriptions
Trans GP BJT NPN 10V 0.05A 4-Pin(3 Tab) SOT-143B T/R
TRANS RF NPN 10V 8GHZ SOT143R
RF Bipolar Transistors TAPE7 TNS-RFSS
NPN 8GHZ wideband transistors
TRANS RF NPN 10V 8GHZ SOT143R
RF Bipolar Transistors TAPE7 TNS-RFSS
NPN 8GHZ wideband transistors
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