BFG67/X,215

NXP USA Inc. BFG67/X,215

Part Number:
BFG67/X,215
Manufacturer:
NXP USA Inc.
Ventron No:
3585004-BFG67/X,215
Description:
TRANS RF NPN 10V 8GHZ SOT143R
ECAD Model:
Datasheet:
BFG67,BFG67/X(R)

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Specifications
NXP USA Inc. BFG67/X,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFG67/X,215.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-253-4, TO-253AA
  • Supplier Device Package
    SOT-143B
  • Operating Temperature
    175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Power - Max
    380mW
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 15mA 5V
  • Voltage - Collector Emitter Breakdown (Max)
    10V
  • Current - Collector (Ic) (Max)
    50mA
  • Frequency - Transition
    8GHz
  • Noise Figure (dB Typ @ f)
    1.3dB @ 1GHz
  • RoHS Status
    ROHS3 Compliant
Description
Description: The Rochester Electronics BFG67/X,215 is a NPN Bipolar Junction Transistor (BJT) designed for RF applications. It is housed in a SOT143R package and has a maximum voltage rating of 10V. It is capable of operating at frequencies up to 8GHz.

Features:
- NPN Bipolar Junction Transistor (BJT)
- SOT143R package
- Maximum voltage rating of 10V
- Operating frequency up to 8GHz

Applications:
- RF amplifiers
- RF switches
- RF mixers
- RF oscillators
- RF detectors
BFG67/X,215 More Descriptions
Trans GP BJT NPN 10V 0.05A 4-Pin(3 Tab) SOT-143B T/R
TRANS RF NPN 10V 8GHZ SOT143R
RF Bipolar Transistors TAPE7 TNS-RFSS
NPN 8GHZ wideband transistors
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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