NXP USA Inc. BFG541,115
- Part Number:
- BFG541,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3585003-BFG541,115
- Description:
- TRANS NPN 15V 9GHZ SOT223
- Datasheet:
- BFG541
NXP USA Inc. BFG541,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFG541,115.
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature175°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureHIGH RELIABILITY
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBFG541
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max650mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 40mA 8V
- Voltage - Collector Emitter Breakdown (Max)15V
- Current - Collector (Ic) (Max)120mA
- Transition Frequency9000MHz
- Frequency - Transition9GHz
- Power Dissipation-Max (Abs)0.65W
- Highest Frequency BandL B
- Noise Figure (dB Typ @ f)1.3dB ~ 2.4dB @ 900MHz
- Power Dissipation Ambient-Max0.65W
- RoHS StatusROHS3 Compliant
BFG541,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFG541,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFG541,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFG541,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFG541,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BFG541,115 More Descriptions
Trans GP BJT NPN 15V 0.12A 4-Pin(3 Tab) SOT-223 T/R
NXP BFG541,115 RF WIDEBAND TRANSISTOR, NPN, 15V, 9GHZ,
BFG541 - NPN 9 GHz wideband transistor
Rf Wideband Transistor, Npn, 15V, 9Ghz, 3-Sot-223; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:15V; Transition Frequency Ft:9Ghz; Power Dissipation Pd:650Mw; Dc Collector Current:120Ma; Dc Current Gain Hfe:120Hfe Rohs Compliant: Yes
NXP BFG541,115 RF WIDEBAND TRANSISTOR, NPN, 15V, 9GHZ,
BFG541 - NPN 9 GHz wideband transistor
Rf Wideband Transistor, Npn, 15V, 9Ghz, 3-Sot-223; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:15V; Transition Frequency Ft:9Ghz; Power Dissipation Pd:650Mw; Dc Collector Current:120Ma; Dc Current Gain Hfe:120Hfe Rohs Compliant: Yes
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