Nexperia USA Inc. BCX56-16,135

Name: BCX56-16,135
Brand: Nexperia USA Inc.
SKU: 2462738-BCX56-16,135
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCX56-16,135

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2462738-BCX56-16,135

Description:: TRANS NPN 80V 1A SOT89

ECAD Model:

Datasheet:: BCX56-16,135

Specifications

Nexperia USA Inc. BCX56-16,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX56-16,135.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
1.25W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
180MHz
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
BCX56
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Max Junction Temperature (Tj)
150°C
Ambient Temperature Range High
150°C
Height
1.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCX56-16,135 Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.

BCX56-16,135 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz

BCX56-16,135 Applications
There are a lot of Nexperia USA Inc.
BCX56-16,135 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCX56-16,135 More Descriptions

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Certification