Infineon Technologies BCX5216E6327HTSA1
- Part Number:
- BCX5216E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2848079-BCX5216E6327HTSA1
- Description:
- TRANS PNP 60V 1A SOT-89
- Datasheet:
- BCX5216E6327HTSA1
Infineon Technologies BCX5216E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCX5216E6327HTSA1.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation2W
- Frequency125MHz
- Base Part NumberBCX52
- Number of Elements1
- Power Dissipation2W
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
BCX5216E6327HTSA1 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCX5216E6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCX5216E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCX5216E6327HTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCX5216E6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCX5216E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCX5216E6327HTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX5216E6327HTSA1 More Descriptions
Trans GP BJT PNP 60V 1A 4-Pin(3 Tab) SOT-89 T/R
PNP Bipolar Transistor, SOT89, RoHSInfineon SCT
CAPACITOR, SOFT TERMINATION, 3300PF
PNP Bipolar Transistor, SOT89, RoHSInfineon SCT
CAPACITOR, SOFT TERMINATION, 3300PF
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