Infineon Technologies BCR158E6327HTSA1
- Part Number:
- BCR158E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3813456-BCR158E6327HTSA1
- Description:
- TRANS PREBIAS PNP 0.2W SOT23-3
- Datasheet:
- BCR158E6327HTSA1
Infineon Technologies BCR158E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCR158E6327HTSA1.
- Factory Lead Time26 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSOT-23-3
- PackagingTape & Reel (TR)
- Published2011
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Voltage - Rated DC-50V
- Max Power Dissipation200mW
- Current Rating-100mA
- Base Part NumberBCR158
- PolarityPNP
- Element ConfigurationSingle
- Power - Max200mW
- Halogen FreeNot Halogen Free
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Collector Emitter Saturation Voltage300mV
- Max Breakdown Voltage50V
- Frequency - Transition200MHz
- hFE Min70
- Resistor - Base (R1)2.2 kOhms
- Resistor - Emitter Base (R2)47 kOhms
- Height900μm
- Length2.9mm
- Width1.3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCR158E6327HTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR158E6327HTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR158E6327HTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR158E6327HTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR158E6327HTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BCR158E6327HTSA1 More Descriptions
BCR158 Series PNP 50 V 100 mA SMT Silicon Digital Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R - Bulk (Alt: BCR158)
PNP Silicon Digital Transistor, SOT23, RoHSInfineon SCT
PNP Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1=2.2 k, R2=47 k); Pb-free (RoHS compliant) package; Qualified according AEC Q101
BRT TRANS, 2.2K/47KOHM, SOT-23; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.047(Ratio); RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R - Bulk (Alt: BCR158)
PNP Silicon Digital Transistor, SOT23, RoHSInfineon SCT
PNP Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1=2.2 k, R2=47 k); Pb-free (RoHS compliant) package; Qualified according AEC Q101
BRT TRANS, 2.2K/47KOHM, SOT-23; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.047(Ratio); RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins
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