BCR158E6327HTSA1

Infineon Technologies BCR158E6327HTSA1

Part Number:
BCR158E6327HTSA1
Manufacturer:
Infineon Technologies
Ventron No:
3813456-BCR158E6327HTSA1
Description:
TRANS PREBIAS PNP 0.2W SOT23-3
ECAD Model:
Datasheet:
BCR158E6327HTSA1

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Specifications
Infineon Technologies BCR158E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCR158E6327HTSA1.
  • Factory Lead Time
    26 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Supplier Device Package
    SOT-23-3
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Voltage - Rated DC
    -50V
  • Max Power Dissipation
    200mW
  • Current Rating
    -100mA
  • Base Part Number
    BCR158
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power - Max
    200mW
  • Halogen Free
    Not Halogen Free
  • Transistor Type
    PNP - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 5mA 5V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Current - Collector (Ic) (Max)
    100mA
  • Collector Emitter Saturation Voltage
    300mV
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    200MHz
  • hFE Min
    70
  • Resistor - Base (R1)
    2.2 kOhms
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Height
    900μm
  • Length
    2.9mm
  • Width
    1.3mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BCR158E6327HTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR158E6327HTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR158E6327HTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BCR158E6327HTSA1 More Descriptions
BCR158 Series PNP 50 V 100 mA SMT Silicon Digital Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R - Bulk (Alt: BCR158)
PNP Silicon Digital Transistor, SOT23, RoHSInfineon SCT
PNP Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1=2.2 k, R2=47 k); Pb-free (RoHS compliant) package; Qualified according AEC Q101
BRT TRANS, 2.2K/47KOHM, SOT-23; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.047(Ratio); RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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