Fairchild/ON Semiconductor BCP55
- Part Number:
- BCP55
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463880-BCP55
- Description:
- TRANS NPN 60V 1.5A SOT223-4
- Datasheet:
- BCP55
Fairchild/ON Semiconductor BCP55 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BCP55.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time5 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight188mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation1.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating1.5A
- Base Part NumberBCP55
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.5W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- Height1.6mm
- Length6.5mm
- Width3.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCP55 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BCP55 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BCP55 Applications
There are a lot of ON Semiconductor
BCP55 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BCP55 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BCP55 Applications
There are a lot of ON Semiconductor
BCP55 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP55 More Descriptions
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 60V 1.5A 1500mW 4-Pin(3 Tab) SOT-223 T/R / TRANS NPN 60V 1.5A SOT223-4
BCP55 Series 60 V CE Breakdown 1.5 A PNP General Purpose Amplifier - SOT-223
Bipolar Transistors - BJT SOT-223 NPN GP AMP
BIPOLAR TRANSISTOR, NPN, 60V, SOT-223
Trans GP BJT NPN 60V 1.5A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 38. See BCP54 for characteristics.
Trans GP BJT NPN 60V 1.5A 1500mW 4-Pin(3 Tab) SOT-223 T/R / TRANS NPN 60V 1.5A SOT223-4
BCP55 Series 60 V CE Breakdown 1.5 A PNP General Purpose Amplifier - SOT-223
Bipolar Transistors - BJT SOT-223 NPN GP AMP
BIPOLAR TRANSISTOR, NPN, 60V, SOT-223
Trans GP BJT NPN 60V 1.5A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 38. See BCP54 for characteristics.
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