Nexperia USA Inc. BCP55,135

Name: BCP55,135
Brand: Nexperia USA Inc.
SKU: 3069052-BCP55,135
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP55,135

Manufacturer:: Nexperia USA Inc.

Ventron No:: 3069052-BCP55,135

Description:: TRANS NPN 60V 1A SOT223

ECAD Model:

Datasheet:: BCP55,135

Specifications

Nexperia USA Inc. BCP55,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP55,135.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
73
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
1.35W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
180MHz
Base Part Number
BCP55
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.35W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
130MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BCP55,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.A maximum collector current of 1A volts can be achieved.

BCP55,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

BCP55,135 Applications
There are a lot of Nexperia USA Inc.
BCP55,135 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP55,135 More Descriptions

Bipolar junction transistor, NPN, 1 A, 60 ## Fehler ##, SMD, TO-261, BCP55,135
BJT - Bipolar Transistor 60V 1A Surface Mount SOT223
Trans GP BJT NPN 60V 1A 4-Pin(3 Tab) SOT-223 T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BCP55,135
60V 650mW 1A 63@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS

Certification