ON Semiconductor BC857CDW1T1G
- Part Number:
- BC857CDW1T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3813309-BC857CDW1T1G
- Description:
- TRANS 2PNP 45V 0.1A SOT363
- Datasheet:
- BC857CDW1T1G
ON Semiconductor BC857CDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC857CDW1T1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-45V
- Max Power Dissipation380mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-100mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC857CD
- Pin Count6
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Power Dissipation380mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product100MHz
- Transistor Type2 PNP (Dual)
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-650mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min420
- Height1.1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description:
The BC857CDW1T1G is a PNP Bipolar Junction Transistor (BJT) from ON Semiconductor. It is designed for use in general purpose switching and amplification applications. It has a maximum collector-emitter voltage of -45V, a maximum frequency of 100MHz, a maximum power dissipation of 380mW, a maximum collector current of -100mA, and a maximum DC current gain of 270.
Features:
• PNP Bipolar Junction Transistor (BJT)
• Maximum Collector-Emitter Voltage: -45V
• Maximum Frequency: 100MHz
• Maximum Power Dissipation: 380mW
• Maximum Collector Current: -100mA
• Maximum DC Current Gain: 270
Applications:
• General purpose switching and amplification
• Audio amplifiers
• Motor control
• Power management
• Automotive applications
The BC857CDW1T1G is a PNP Bipolar Junction Transistor (BJT) from ON Semiconductor. It is designed for use in general purpose switching and amplification applications. It has a maximum collector-emitter voltage of -45V, a maximum frequency of 100MHz, a maximum power dissipation of 380mW, a maximum collector current of -100mA, and a maximum DC current gain of 270.
Features:
• PNP Bipolar Junction Transistor (BJT)
• Maximum Collector-Emitter Voltage: -45V
• Maximum Frequency: 100MHz
• Maximum Power Dissipation: 380mW
• Maximum Collector Current: -100mA
• Maximum DC Current Gain: 270
Applications:
• General purpose switching and amplification
• Audio amplifiers
• Motor control
• Power management
• Automotive applications
BC857CDW1T1G More Descriptions
BC857CDW1T1G - 45 V 100 mA Dual PNP General Purpose Transistor - SOT-363
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon
TRANS 2PNP 45V 0.1A SOT363 / Trans GP BJT PNP 45V 0.1A 380mW 6-Pin SC-88 T/R
ON Semi BC857CDW1T1G PNP Bipolar Transistor, 0.1 A, 45 V, 6-Pin SOT-363 | ON Semiconductor BC857CDW1T1G
ON SEMICONDUCTOR - BC857CDW1T1G - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 380 mW, -100 mA, 270 hFE
TRANS, BIPOL, DUALPNP, SOT-363; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 380mW; DC Collector Current: -100mA; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Bipolar Transistor, Pnp, Dual, -45V Sot363, Full Reel; Transistor Polarity:Pnp; No. Of Pins:6Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Msl:Msl 1 - Unlimited Rohs Compliant: Yes |Onsemi BC857CDW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon
TRANS 2PNP 45V 0.1A SOT363 / Trans GP BJT PNP 45V 0.1A 380mW 6-Pin SC-88 T/R
ON Semi BC857CDW1T1G PNP Bipolar Transistor, 0.1 A, 45 V, 6-Pin SOT-363 | ON Semiconductor BC857CDW1T1G
ON SEMICONDUCTOR - BC857CDW1T1G - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 380 mW, -100 mA, 270 hFE
TRANS, BIPOL, DUALPNP, SOT-363; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 380mW; DC Collector Current: -100mA; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Bipolar Transistor, Pnp, Dual, -45V Sot363, Full Reel; Transistor Polarity:Pnp; No. Of Pins:6Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Msl:Msl 1 - Unlimited Rohs Compliant: Yes |Onsemi BC857CDW1T1G
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