Fairchild/ON Semiconductor BC548BTF
- Part Number:
- BC548BTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2846617-BC548BTF
- Description:
- TRANS NPN 30V 0.1A TO-92
- Datasheet:
- BC546-50 Datasheet
Fairchild/ON Semiconductor BC548BTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC548BTF.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberBC548
- Power - Max500mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)100mA
- Frequency - Transition300MHz
BC548BTF Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BC548BTF Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
BC548BTF Applications
There are a lot of ON Semiconductor
BC548BTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BC548BTF Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
BC548BTF Applications
There are a lot of ON Semiconductor
BC548BTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC548BTF More Descriptions
NPN Epitaxial Silicon Transistor
TRANS NPN 30V 0.1A TO-92
MOSFET N-CH 40V 8WDFN
TRANS NPN 30V 0.1A TO-92
MOSFET N-CH 40V 8WDFN
The three parts on the right have similar specifications to BC548BTF.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyRoHS StatusHTS CodeSubcategoryReach Compliance CodePower Dissipation-Max (Abs)VCEsat-MaxSource Url Status Check DateView Compare
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BC548BTFThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)150°C TJTape & Reel (TR)Obsolete1 (Unlimited)BC548500mWNPN200 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA30V100mA300MHz---------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)150°C TJTape & Box (TB)Obsolete1 (Unlimited)BC546500mWNPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA65V100mA300MHz--------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)BC54*625mWNPN110 @ 2mA 5V-300mV @ 5mA, 100mA45V100mA300MHzNOSILICON2006e3yes3EAR99Matte Tin (Sn)BOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not Qualified1SINGLEAMPLIFIERNPN300MHzRoHS Compliant------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)150°C TJTape & Box (TB)Obsolete1 (Unlimited)BC546500mWNPN200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA65V100mA100MHzNOSILICON1999e3-3EAR99Matte Tin (Sn)BOTTOM250403O-PBCY-T3Not Qualified1SINGLESWITCHINGNPN100MHzROHS3 Compliant8541.21.00.95Other Transistorsunknown0.625W0.6 V2013-06-14 00:00:00
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