Vishay Semiconductor Diodes Division BA783S-G3-08
- Part Number:
- BA783S-G3-08
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2436650-BA783S-G3-08
- Description:
- DIODE BAND SW 100MA SOD323
- ECAD Model:
-
- Datasheet:
- BA783S-G3-08
Vishay Semiconductor Diodes Division BA783S-G3-08 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BA783S-G3-08.
- Package / CaseSC-76, SOD-323
- Surface MountYES
- Diode Element MaterialSILICON
- Operating Temperature125°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.10.00.60
- SubcategoryRectifier Diodes
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- JESD-30 CodeR-PDSO-G2
- Number of Elements1
- Diode TypeStandard - Single
- Output Current-Max0.1A
- Current - Max100mA
- Capacitance @ Vr, F1.2pF @ 3V 1MHz
- Forward Voltage-Max1V
- Voltage - Peak Reverse (Max)35V
- Frequency BandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
- Resistance @ If, F1.2Ohm @ 3mA 1GHz
- Diode Capacitance-Max1.2pF
- RoHS StatusROHS3 Compliant
BA783S-G3-08 Overview
Operating from 100mA is the maximum current for this device.Its maximum forward voltage is 1V.The maximum peak reverse voltage for this device is 35V, according to the applicable device specifications.This device can read current voltages up to 0.1A.
BA783S-G3-08 Features
from a maximum current of 100mA volts
1V forward voltage
a maximum output current voltage of 0.1A
BA783S-G3-08 Applications
There are a lot of Vishay Semiconductor Diodes Division
BA783S-G3-08 applications of RF diodes.
Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Operating from 100mA is the maximum current for this device.Its maximum forward voltage is 1V.The maximum peak reverse voltage for this device is 35V, according to the applicable device specifications.This device can read current voltages up to 0.1A.
BA783S-G3-08 Features
from a maximum current of 100mA volts
1V forward voltage
a maximum output current voltage of 0.1A
BA783S-G3-08 Applications
There are a lot of Vishay Semiconductor Diodes Division
BA783S-G3-08 applications of RF diodes.
Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
BA783S-G3-08 More Descriptions
BAND SWITCHING DIODE SOD323-G3
RF DIODE STANDARD 35V SOD323
35V RF 3MA<1.2OHM CD<1.5PF
DIODE BAND SW 100MA SOD323
RF DIODE STANDARD 35V SOD323
35V RF 3MA<1.2OHM CD<1.5PF
DIODE BAND SW 100MA SOD323
The three parts on the right have similar specifications to BA783S-G3-08.
-
ImagePart NumberManufacturerPackage / CaseSurface MountDiode Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsDiode TypeOutput Current-MaxCurrent - MaxCapacitance @ Vr, FForward Voltage-MaxVoltage - Peak Reverse (Max)Frequency BandResistance @ If, FDiode Capacitance-MaxRoHS StatusPin CountReference StandardView Compare
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BA783S-G3-08SC-76, SOD-323YESSILICON125°C TJTape & Reel (TR)2015e3yesObsolete1 (Unlimited)2EAR99Matte Tin (Sn)8541.10.00.60Rectifier DiodesDUALGULL WING26010R-PDSO-G21Standard - Single0.1A100mA1.2pF @ 3V 1MHz1V35VVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY1.2Ohm @ 3mA 1GHz1.2pFROHS3 Compliant--- -
SOD-123YESSILICON125°C TJTape & Reel (TR)2015e3yesObsolete1 (Unlimited)2EAR99Matte Tin (Sn)8541.10.00.60-DUALGULL WING26010R-PDSO-G21PIN - Single-100mA1.2pF @ 3V 1MHz-35VULTRA HIGH FREQUENCY1.2Ohm @ 3mA 1GHz1.2pFROHS3 Compliant2AEC-Q101
-
SOD-123YESSILICON125°C TJTape & Reel (TR)2015e3yesObsolete1 (Unlimited)2EAR99Matte Tin (Sn)8541.10.00.60-DUALGULL WING26010R-PDSO-G21PIN - Single-100mA1.25pF @ 3V 1MHz-35VULTRA HIGH FREQUENCY700mOhm @ 3mA 1GHz1.25pFROHS3 Compliant2AEC-Q101
-
SOD-123YESSILICON125°C TJTape & Reel (TR)2015e3yesObsolete1 (Unlimited)2EAR99Matte Tin (Sn)8541.10.00.60Rectifier DiodesDUALGULL WING26010R-PDSO-G21PIN - Single0.1A100mA1.25pF @ 3V 1MHz1V35VVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY700mOhm @ 3mA 1GHz1.25pFROHS3 Compliant--
-
Vishay Semiconductor Diodes Division
PIN - Single 1.25pF @ 3V 1MHz 125°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SOD-123
-
Vishay Semiconductor Diodes Division
PIN - Single 1.25pF @ 3V 1MHz 125°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SOD-123
-
Vishay Semiconductor Diodes Division
PIN - Single 1.2pF @ 3V 1MHz 125°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SOD-123
-
Vishay Semiconductor Diodes Division
PIN - Single 1.25pF @ 3V 1MHz 125°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SOD-123
-
Vishay Semiconductor Diodes Division
PIN - Single 1.25pF @ 3V 1MHz 125°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SOD-123
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