Infineon Technologies AUIRFN8459TR

Name: AUIRFN8459TR
Brand: Infineon Technologies
SKU: 3585913-AUIRFN8459TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AUIRFN8459TR

Manufacturer:: Infineon Technologies

Ventron No:: 3585913-AUIRFN8459TR

Description:: MOSFET 2N-CH 40V 50A 8PQFN

ECAD Model:

Datasheet:: AUIRFN8459TR

Specifications

Infineon Technologies AUIRFN8459TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRFN8459TR.

Factory Lead Time
11 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
4.8mOhm
Additional Feature
ULTRA LOW RESISTANCE
Max Power Dissipation
50W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-F6
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.9m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
3.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
2250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Rise Time
55ns
Drain to Source Voltage (Vdss)
40V
Fall Time (Typ)
42 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
50A
Gate to Source Voltage (Vgs)
20V
DS Breakdown Voltage-Min
40V
Avalanche Energy Rating (Eas)
66 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
RoHS Status
ROHS3 Compliant

Description

AUIRFN8459TR Description
Designed for automotive applications, this HEXFET power MOSFET uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the design include a 175 ??C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these functions makes the product an extremely efficient and reliable device for automotive and a variety of other applications.
AUIRFN8459TR Features
?¤ Advanced Process Technology ?¤ Dual N-Channel MOSFET ?¤ Ultra Low On-Resistance ?¤ 175??C Operating Temperature ?¤ Fast Switching ?¤ Repetitive Avalanche Allowed up to Tjmax ?¤ Lead-Free, RoHS Compliant ?¤ Automotive Qualified * AUIRFN8459TR Applications
?¤ 12V Automotive Systems ?¤ Brushed DC Motor ?¤ Braking ?¤ Transmission

AUIRFN8459TR More Descriptions

40V Dual N Channel HEXFET Power MOSFET in a PQFN 5 x 6 L package, DUAL PQFN 5X6 8L, RoHSInfineon SCT
MOSFET, 40V, 50A, 4.8 mOhm, 40 nC Qg, Dual PQFN 5x6 | Infineon AUIRFN8459TR
Transistor MOSFET Array Dual N-Channel 40V 50A 8-Pin PQFN T/R - Product that comes on tape, but is n
Trans MOSFET N-CH Si 40V 70A Automotive 8-Pin QFN EP T/R
MOSFET, DUAL N-CH, 40V, 50A, PQFN; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3
Benefits: Advanced Process Technology; Dual N-Channel MOSFET; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

Certification