Alliance Memory, Inc. AS6C1016-55ZIN
- Part Number:
- AS6C1016-55ZIN
- Manufacturer:
- Alliance Memory, Inc.
- Ventron No:
- 3835445-AS6C1016-55ZIN
- Description:
- IC SRAM 1MBIT 55NS 44TSOP
- Datasheet:
- AS6C1016-55ZIN
Alliance Memory, Inc. AS6C1016-55ZIN technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS6C1016-55ZIN.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Number of Pins44
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2007
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations44
- ECCN CodeEAR99
- TechnologySRAM - Asynchronous
- Voltage - Supply2.7V~5.5V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.8mm
- Reflow Temperature-Max (s)40
- Pin Count44
- Qualification StatusNot Qualified
- Operating Supply Voltage3V
- Supply Voltage-Max (Vsup)5.5V
- Power Supplies3/5V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size1Mb 64K x 16
- Number of Ports1
- Memory TypeVolatile
- Supply Current-Max0.06mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page55ns
- Address Bus Width16b
- Density1 Mb
- Standby Current-Max0.00002A
- Access Time (Max)55 ns
- I/O TypeCOMMON
- Standby Voltage-Min2V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
AS6C1016-55ZIN Overview
This particular component is manufactured by a company called Alliance Memory, Inc. and falls under the category of Memory chips. It is packaged in a tray and has an ECCN Code of EAR99. The maximum temperature for reflow is 260 degrees Celsius. The required supply voltage for this chip is 3 volts. Currently, it does not have a qualification status. The maximum supply voltage allowed is 5.5 volts and the power supply options are 3 or 5 volts. The minimum supply voltage is 2.7 volts. This memory chip uses a parallel interface and is compliant with the ROHS3 standard.
AS6C1016-55ZIN Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3V
I/O Type: COMMON
AS6C1016-55ZIN Applications
There are a lot of Alliance Memory, Inc. AS6C1016-55ZIN Memory applications.
main computer memory
hard disk drive (HDD)
workstations,
personal digital assistants
eDRAM
graphics card
telecommunications
data buffer
mainframes
embedded logic
This particular component is manufactured by a company called Alliance Memory, Inc. and falls under the category of Memory chips. It is packaged in a tray and has an ECCN Code of EAR99. The maximum temperature for reflow is 260 degrees Celsius. The required supply voltage for this chip is 3 volts. Currently, it does not have a qualification status. The maximum supply voltage allowed is 5.5 volts and the power supply options are 3 or 5 volts. The minimum supply voltage is 2.7 volts. This memory chip uses a parallel interface and is compliant with the ROHS3 standard.
AS6C1016-55ZIN Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3V
I/O Type: COMMON
AS6C1016-55ZIN Applications
There are a lot of Alliance Memory, Inc. AS6C1016-55ZIN Memory applications.
main computer memory
hard disk drive (HDD)
workstations,
personal digital assistants
eDRAM
graphics card
telecommunications
data buffer
mainframes
embedded logic
AS6C1016-55ZIN More Descriptions
AS6C1016 Series 1 Mb (64 K x 16) 2.7 to 5.5 V 55 ns SMT Static RAM - TSOP II-44
SRAM Chip Async Single 3V 1M-Bit 64K x 16 55ns 44-Pin TSOP-II
EAR99 Surface Mount Tray SRAM - Asynchronous ic memory 55ns 0.8mm 0.00002A 1Mb
Low Power CMOS SRAM 1MB 44pin TSOP II 2.7-5V 64K x16
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
IC SRAM 1MBIT PARALLEL 44TSOP II
SRAM Chip Async Single 3V 1M-Bit 64K x 16 55ns 44-Pin TSOP-II
EAR99 Surface Mount Tray SRAM - Asynchronous ic memory 55ns 0.8mm 0.00002A 1Mb
Low Power CMOS SRAM 1MB 44pin TSOP II 2.7-5V 64K x16
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
IC SRAM 1MBIT PARALLEL 44TSOP II
The three parts on the right have similar specifications to AS6C1016-55ZIN.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Pin CountQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxAccess Time (Max)I/O TypeStandby Voltage-MinRoHS StatusLead FreeHTS CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOrganizationMemory DensityAlternate Memory WidthLengthHeight Seated (Max)WidthReach Compliance CodeJESD-609 CodeTerminal FinishOperating ModeView Compare
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AS6C1016-55ZIN8 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)YES44-40°C~85°C TATray2007yesActive3 (168 Hours)44EAR99SRAM - Asynchronous2.7V~5.5VDUAL26013V0.8mm4044Not Qualified3V5.5V3/5V2.7V1Mb 64K x 161Volatile0.06mASRAMParallel3-STATE1655ns16b1 Mb0.00002A55 nsCOMMON2VROHS3 CompliantLead Free--------------
-
8 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES--40°C~85°C TATape & Reel (TR)--Active3 (168 Hours)48-SRAM - Asynchronous2.7V~3.6VDUALNOT SPECIFIED13V0.5mm----3.6V-2.7V64Mb 4M x 16-Volatile-SRAMParallel-1655ns---55 ns--Non-RoHS Compliant-8542.32.00.41NOT SPECIFIEDR-PDSO-G484MX1667108864 bit818.4mm1.2mm12mm----
-
8 WeeksSurface Mount28-TSSOP (0.465, 11.80mm Width)-28-40°C~85°C TATape & Reel (TR)2005yesActive3 (168 Hours)--SRAM - Asynchronous2.7V~5.5V-NOT SPECIFIED----------256Kb 32K x 8-Volatile-SRAMParallel--55ns------ROHS3 Compliant--NOT SPECIFIED-------unknown---
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8 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES--40°C~85°C TATray-yesActive3 (168 Hours)48-CMOS2.7V~3.6VDUAL26013V0.5mm-48--3.6V-2.7V16Mb 1M x 16-Volatile-SRAMParallel-1655ns---55 ns--ROHS3 Compliant--40R-PDSO-G481MX1616777216 bit-18.4mm1.2mm12mm-e3/e6PURE MATTE TIN/TIN BISMUTHASYNCHRONOUS
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