Alliance Memory, Inc. AS4C8M16S-6TANTR
- Part Number:
- AS4C8M16S-6TANTR
- Manufacturer:
- Alliance Memory, Inc.
- Ventron No:
- 3231926-AS4C8M16S-6TANTR
- Description:
- IC SDRAM 128MBIT 166MHZ 54TSOP
- Datasheet:
- AS4C8M16S
Alliance Memory, Inc. AS4C8M16S-6TANTR technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS4C8M16S-6TANTR.
- Mounting TypeSurface Mount
- Package / Case54-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Number of Pins54
- Operating Temperature-40°C~105°C TA
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3/e6
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations54
- ECCN CodeEAR99
- Terminal FinishPURE MATTE TIN/TIN BISMUTH
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count54
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)3V
- Memory Size128Mb 8M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency166MHz
- Access Time5ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization8MX16
- Memory Width16
- Write Cycle Time - Word, Page2ns
- Memory Density134217728 bit
- Height Seated (Max)1.2mm
- Length22.22mm
- RoHS StatusRoHS Compliant
AS4C8M16S-6TANTR Overview
In 2012, a new electronic device was published with an ECCN Code of EAR99, indicating that it is classified as a low-level technology and can be exported without a license. This device has a peak reflow temperature of 260 degrees Celsius, ensuring its durability and reliability. With only one function, it is designed for a specific purpose, making it efficient and user-friendly. The terminal pitch of 0.8mm allows for compact and precise connections, while the supply voltage-max of 3.6V ensures optimal performance. The memory format of DRAM and data bus width of 16b provide ample storage and data transfer capabilities. Additionally, the device is RoHS compliant, ensuring it meets environmental standards.
AS4C8M16S-6TANTR Features
Package / Case: 54-TSOP (0.400, 10.16mm Width)
54 Pins
Additional Feature:AUTO/SELF REFRESH
AS4C8M16S-6TANTR Applications
There are a lot of Alliance Memory, Inc.
AS4C8M16S-6TANTR Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
In 2012, a new electronic device was published with an ECCN Code of EAR99, indicating that it is classified as a low-level technology and can be exported without a license. This device has a peak reflow temperature of 260 degrees Celsius, ensuring its durability and reliability. With only one function, it is designed for a specific purpose, making it efficient and user-friendly. The terminal pitch of 0.8mm allows for compact and precise connections, while the supply voltage-max of 3.6V ensures optimal performance. The memory format of DRAM and data bus width of 16b provide ample storage and data transfer capabilities. Additionally, the device is RoHS compliant, ensuring it meets environmental standards.
AS4C8M16S-6TANTR Features
Package / Case: 54-TSOP (0.400, 10.16mm Width)
54 Pins
Additional Feature:AUTO/SELF REFRESH
AS4C8M16S-6TANTR Applications
There are a lot of Alliance Memory, Inc.
AS4C8M16S-6TANTR Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
AS4C8M16S-6TANTR More Descriptions
IC SDRAM 128MBIT 166MHZ 54TSOP
IC DRAM 128MBIT PAR 54TSOP II
DRAM 128Mb, 3.3V, 166Mhz 8M x 16 SDRAM
IC DRAM 128M PARALLEL 54TSOP
IC DRAM 128MBIT PAR 54TSOP II
DRAM 128Mb, 3.3V, 166Mhz 8M x 16 SDRAM
IC DRAM 128M PARALLEL 54TSOP
The three parts on the right have similar specifications to AS4C8M16S-6TANTR.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityHeight Seated (Max)LengthRoHS StatusFactory Lead TimeJESD-30 CodeWidthSeriesView Compare
-
AS4C8M16S-6TANTRSurface Mount54-TSOP (0.400, 10.16mm Width)YES54-40°C~105°C TATape & Reel (TR)2012e3/e6yesObsolete3 (168 Hours)54EAR99PURE MATTE TIN/TIN BISMUTHAUTO/SELF REFRESHSDRAM3V~3.6VDUAL26013.3V0.8mm40543.6V3V128Mb 8M x 161VolatileSYNCHRONOUS166MHz5nsDRAMParallel16b8MX16162ns134217728 bit1.2mm22.22mmRoHS Compliant-----
-
Surface Mount60-VFBGA---30°C~85°C TJTape & Reel (TR)2015--Active3 (168 Hours)----SDRAM - Mobile LPDDR1.7V~1.9V-NOT SPECIFIED---NOT SPECIFIED---512Mb 32M x 16-Volatile-200MHz700psDRAMParallel---15ns---ROHS3 Compliant8 Weeks---
-
Surface Mount60-TFBGAYES--40°C~95°C TCTray2014-yesActive3 (168 Hours)60--AUTO/SELF REFRESHSDRAM - DDR21.7V~1.9VBOTTOMNOT SPECIFIED11.8V0.8mmNOT SPECIFIED-1.9V1.7V2Gb 256M x 81VolatileSYNCHRONOUS400MHz57.5nsDRAMParallel-256MX8815ns2147483648 bit1.2mm13mmROHS3 Compliant8 WeeksR-PBGA-B6010.5mm-
-
Surface Mount96-TFBGA---40°C~105°C TCTape & Reel (TR)---Active3 (168 Hours)----SDRAM - DDR31.425V~1.575V-NOT SPECIFIED---NOT SPECIFIED---4Gb 256M x 16-Volatile-800MHz20nsDRAMParallel---15ns---ROHS3 Compliant8 Weeks--Automotive, AEC-Q100
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