Alliance Memory, Inc. AS4C4M16S-7TCNTR

Name: AS4C4M16S-7TCNTR
Brand: Alliance Memory, Inc.
SKU: 3245119-AS4C4M16S-7TCNTR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AS4C4M16S-7TCNTR

Manufacturer:: Alliance Memory, Inc.

Ventron No:: 3245119-AS4C4M16S-7TCNTR

Description:: IC SDRAM 64MBIT 143MHZ 54TSOP

ECAD Model:

Datasheet:: AS4C4M16S

Specifications

Alliance Memory, Inc. AS4C4M16S-7TCNTR technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS4C4M16S-7TCNTR.

Mounting Type
Surface Mount
Package / Case
54-TSOP (0.400, 10.16mm Width)
Surface Mount
YES
Number of Pins
54
Operating Temperature
0°C~70°C TA
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3/e6
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
54
ECCN Code
EAR99
Terminal Finish
PURE MATTE TIN/TIN BISMUTH
Additional Feature
AUTO/SELF REFRESH
Technology
SDRAM
Voltage - Supply
3V~3.6V
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
3.3V
Terminal Pitch
0.8mm
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
54
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
3V
Memory Size
64Mb 4M x 16
Number of Ports
1
Memory Type
Volatile
Operating Mode
SYNCHRONOUS
Clock Frequency
143MHz
Access Time
5.4ns
Memory Format
DRAM
Memory Interface
Parallel
Data Bus Width
16b
Organization
4MX16
Memory Width
16
Write Cycle Time - Word, Page
2ns
Memory Density
67108864 bit
Height Seated (Max)
1.2mm
Length
22.22mm
RoHS Status
RoHS Compliant

Description

AS4C4M16S-7TCNTR Overview
The DRAM memory format is a popular choice for its high storage capacity and efficient data retrieval. With a data bus width of 16b and an organization of 4MX16, this particular DRAM chip boasts a total of 54 pins, allowing for a wide range of functions to be performed. With a supply voltage of 3.3V and a minimum supply voltage of 3V, this chip is designed to operate at low power consumption levels. The terminal pitch of 0.8mm ensures precise connections and smooth data transfer. Additionally, the write cycle time for both a word and a page is an impressive 2ns, making this DRAM chip a top contender for any memory-intensive applications.

AS4C4M16S-7TCNTR Features
Package / Case: 54-TSOP (0.400, 10.16mm Width)
54 Pins
Additional Feature:AUTO/SELF REFRESH

AS4C4M16S-7TCNTR Applications
There are a lot of Alliance Memory, Inc.
AS4C4M16S-7TCNTR Memory applications.

eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer

AS4C4M16S-7TCNTR More Descriptions

DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II
NCNR - SDRAM 64Mb 4Mx16 143MHz RoHSconf
DRAM 64Mb, 3.3V, 143Mhz 4M x 16 SDRAM

Product Comparison

The three parts on the right have similar specifications to AS4C4M16S-7TCNTR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Number of Pins

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

Pin Count

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Memory Type

Operating Mode

Clock Frequency

Access Time

Memory Format

Memory Interface

Data Bus Width

Organization

Memory Width

Write Cycle Time - Word, Page

Memory Density

Height Seated (Max)

Length

RoHS Status

Factory Lead Time

Mount

HTS Code

Operating Supply Voltage

Data Rate

Address Bus Width

Density

Height

Width

Radiation Hardening

Lead Free

JESD-30 Code

View Compare
AS4C4M16S-7TCNTR

Alliance Memory, Inc.

Surface Mount

54-TSOP (0.400, 10.16mm Width)

YES

54

0°C~70°C TA

Tape & Reel (TR)

2012

e3/e6

yes

Obsolete

3 (168 Hours)

54

EAR99

PURE MATTE TIN/TIN BISMUTH

AUTO/SELF REFRESH

SDRAM

3V~3.6V

DUAL

260

1

3.3V

0.8mm

40

54

3.6V

3V

64Mb 4M x 16

1

Volatile

SYNCHRONOUS

143MHz

5.4ns

DRAM

Parallel

16b

4MX16

16

2ns

67108864 bit

1.2mm

22.22mm

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-
AS4C256M16D3LB-12BINTR

Alliance Memory, Inc.

Surface Mount

96-TFBGA

-

-

-40°C~95°C TC

Tape & Reel (TR)

-

-

-

Active

3 (168 Hours)

-

-

-

-

SDRAM - DDR3L

1.283V~1.45V

-

-

-

-

-

-

-

-

-

4Gb 256M x 16

-

Volatile

-

800MHz

20ns

DRAM

Parallel

-

-

-

15ns

-

-

-

Non-RoHS Compliant

8 Weeks

-

-

-

-

-

-

-

-

-

-

-

AS4C4M16S-7TCNTR vs AS4C256M16D3LB-12BINTR
AS4C32M16D1-5TIN

Alliance Memory, Inc.

Surface Mount

66-TSSOP (0.400, 10.16mm Width)

-

66

-40°C~85°C TA

Tray

2012

e3/e6

yes

Obsolete

3 (168 Hours)

66

EAR99

PURE MATTE TIN/TIN BISMUTH

AUTO/SELF REFRESH

SDRAM - DDR

2.3V~2.7V

DUAL

260

1

2.5V

0.65mm

40

66

2.7V

2.3V

512Mb 32M x 16

1

Volatile

-

200MHz

700ps

DRAM

Parallel

16b

32MX16

-

15ns

-

-

22.35mm

RoHS Compliant

-

Surface Mount

8542.32.00.28

2.5V

400 Mbps

13b

512 Mb

1.1mm

10.29mm

No

Lead Free

-

AS4C4M16S-7TCNTR vs AS4C32M16D1-5TIN
AS4C256M8D2-25BIN

Alliance Memory, Inc.

Surface Mount

60-TFBGA

YES

-

-40°C~95°C TC

Tray

2014

-

yes

Active

3 (168 Hours)

60

-

-

AUTO/SELF REFRESH

SDRAM - DDR2

1.7V~1.9V

BOTTOM

NOT SPECIFIED

1

1.8V

0.8mm

NOT SPECIFIED

-

1.9V

1.7V

2Gb 256M x 8

1

Volatile

SYNCHRONOUS

400MHz

57.5ns

DRAM

Parallel

-

256MX8

8

15ns

2147483648 bit

1.2mm

13mm

ROHS3 Compliant

8 Weeks

-

-

-

-

-

-

-

10.5mm

-

-

R-PBGA-B60

AS4C4M16S-7TCNTR vs AS4C256M8D2-25BIN