APTM100TA35FPG

Microsemi Corporation APTM100TA35FPG

Part Number:
APTM100TA35FPG
Manufacturer:
Microsemi Corporation
Ventron No:
3585757-APTM100TA35FPG
Description:
MOSFET 6N-CH 1000V 22A SP6-P
ECAD Model:
Datasheet:
APTM100TA35FPG

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Specifications
Microsemi Corporation APTM100TA35FPG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTM100TA35FPG.
  • Factory Lead Time
    36 Weeks
  • Mount
    Chassis Mount, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    SP6
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2012
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    21
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    AVALANCHE RATED
  • Max Power Dissipation
    390W
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Pin Count
    21
  • JESD-30 Code
    R-XUFM-X21
  • Number of Elements
    6
  • Configuration
    3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    390W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    18 ns
  • FET Type
    6 N-Channel (3-Phase Bridge)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    420m Ω @ 11A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 2.5mA
  • Input Capacitance (Ciss) (Max) @ Vds
    5200pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    186nC @ 10V
  • Rise Time
    12ns
  • Drain to Source Voltage (Vdss)
    1000V 1kV
  • Fall Time (Typ)
    40 ns
  • Turn-Off Delay Time
    155 ns
  • Continuous Drain Current (ID)
    22A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain-source On Resistance-Max
    0.42Ohm
  • Pulsed Drain Current-Max (IDM)
    88A
  • DS Breakdown Voltage-Min
    1000V
  • Avalanche Energy Rating (Eas)
    3000 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
APTM100TA35FPG Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet APTM100TA35FPG or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTM100TA35FPG. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APTM100TA35FPG More Descriptions
Pm-Mosfet-Fredfet-7-Sp6P Sp6-P Tube Rohs Compliant: Yes |Microchip APTM100TA35FPG
Trans MOSFET Array Dual N-CH 1KV 22A 21-Pin Case SP6-P
Compliant Chassis Mount, Screw 40 ns Bulk 12 ns 420 mΩ Module 6
High Voltage Power Module, Triple Phase leg, RoHSMicrochip SCT
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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