Microsemi Corporation APTGT75SK60T1G
- Part Number:
- APTGT75SK60T1G
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2493360-APTGT75SK60T1G
- Description:
- IGBT 600V 100A 250W SP1
- Datasheet:
- APTGT75SK60T1G
Microsemi Corporation APTGT75SK60T1G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT75SK60T1G.
- Factory Lead Time22 Weeks
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseSP1
- Number of Pins1
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- Published2007
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations12
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation250W
- Terminal PositionUPPER
- Terminal FormTHROUGH-HOLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count12
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSingle
- Case ConnectionISOLATED
- Power - Max250W
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)1.9V
- Max Collector Current100A
- Current - Collector Cutoff (Max)250μA
- Collector Emitter Breakdown Voltage600V
- Input Capacitance4.62nF
- Turn On Time170 ns
- Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 75A
- Turn Off Time-Nom (toff)310 ns
- IGBT TypeTrench Field Stop
- NTC ThermistorYes
- Gate-Emitter Voltage-Max20V
- Input Capacitance (Cies) @ Vce4.62nF @ 25V
- RoHS StatusRoHS Compliant
APTGT75SK60T1G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT75SK60T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT75SK60T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT75SK60T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT75SK60T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APTGT75SK60T1G More Descriptions
Trans IGBT Module N-CH 600V 100A 12-Pin Case SP1
POWER IGBT TRANSISTOR
Contact for details
POWER IGBT TRANSISTOR
Contact for details
The three parts on the right have similar specifications to APTGT75SK60T1G.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeInputCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageInput CapacitanceTurn On TimeVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeNTC ThermistorGate-Emitter Voltage-MaxInput Capacitance (Cies) @ VceRoHS StatusMax Operating TemperatureMin Operating TemperatureVoltage - Collector Emitter Breakdown (Max)VCEsat-MaxRadiation HardeningLead FreeJESD-30 CodeElement ConfigurationView Compare
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APTGT75SK60T1G22 WeeksChassis Mount, ScrewChassis MountSP11SILICON-40°C~175°C TJ2007e1yesObsolete1 (Unlimited)12EAR99TIN SILVER COPPERInsulated Gate BIP Transistors250WUPPERTHROUGH-HOLENOT SPECIFIEDNOT SPECIFIED12Not Qualified1SingleISOLATED250WMOTOR CONTROLN-CHANNELStandard1.9V100A250μA600V4.62nF170 ns1.9V @ 15V, 75A310 nsTrench Field StopYes20V4.62nF @ 25VRoHS Compliant---------
-
-Chassis Mount, ScrewChassis MountSP112--2007e1yesObsolete1 (Unlimited)12EAR99TIN SILVER COPPERInsulated Gate BIP Transistors208WUPPERUNSPECIFIED--12-4Full Bridge InverterISOLATED-MOTOR CONTROLN-CHANNELStandard1.2kV40A250μA1.2kV1.65nF110 ns3.7V @ 15V, 25A386 nsNPTYes20V1.65nF @ 25VRoHS Compliant150°C-40°C1200V3.7 VNoLead Free--
-
-Chassis Mount, ScrewChassis MountSP332--2012e1yesObsolete1 (Unlimited)25EAR99TIN SILVER COPPERInsulated Gate BIP Transistors208WUPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIED25Not Qualified4Full Bridge InverterISOLATED-MOTOR CONTROLN-CHANNELStandard1.2kV40A250μA1.2kV1.65nF110 ns3.7V @ 15V, 25A386 nsNPTYes20V1.65nF @ 25VRoHS Compliant150°C-40°C1200V3.7 V--R-XUFM-X25-
-
-Chassis Mount, ScrewChassis MountSP218--2012--Obsolete1 (Unlimited)-EAR99-Insulated Gate BIP Transistors568W------1Half Bridge----Standard1.2kV135A250μA1.2kV6.5nF-3.7V @ 15V, 100A-NPTNo20V6.5nF @ 25VRoHS Compliant150°C-40°C1200V3.7 V---Dual
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