Microsemi Corporation APTC80A10SCTG

Name: APTC80A10SCTG
Brand: Microsemi Corporation
SKU: 2474673-APTC80A10SCTG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTC80A10SCTG

Manufacturer:: Microsemi Corporation

Ventron No:: 2474673-APTC80A10SCTG

Description:: MOSFET 2N-CH 800V 42A SP4

ECAD Model:

Datasheet:: APTC80A10SCTG

Specifications

Microsemi Corporation APTC80A10SCTG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTC80A10SCTG.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
22 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP4
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Bulk
Published
1997
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
10
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Additional Feature
AVALANCHE RATED
Max Power Dissipation
416W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
10
JESD-30 Code
R-XUFM-X10
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
416W
Case Connection
ISOLATED
Turn On Delay Time
10 ns
FET Type
2 N-Channel (Half Bridge)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 21A, 10V
Vgs(th) (Max) @ Id
3.9V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds
6761pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
273nC @ 10V
Rise Time
13ns
Drain to Source Voltage (Vdss)
800V
Fall Time (Typ)
35 ns
Turn-Off Delay Time
83 ns
Continuous Drain Current (ID)
42A
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.1Ohm
Pulsed Drain Current-Max (IDM)
168A
DS Breakdown Voltage-Min
800V
Avalanche Energy Rating (Eas)
670 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

APTC80A10SCTG Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet APTC80A10SCTG or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTC80A10SCTG. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTC80A10SCTG More Descriptions

Pm-Mosfet-Coolmos-Sbd-Sp4 Sp4 Tube Rohs Compliant: Yes |Microchip APTC80A10SCTG
High Voltage Power Module, Phase leg series FRED and SiC parallel diodes, RoHSMicrochip SCT
Trans MOSFET Array Dual N-CH 800V 42A 20-Pin Case SP4
SILICON CARBIDE/SILICON HYBRID MODULES

Product Comparison

The three parts on the right have similar specifications to APTC80A10SCTG.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

FET Feature

Radiation Hardening

RoHS Status

Series

Qualification Status

Subcategory

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

View Compare
APTC80A10SCTG

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

22 Weeks

Chassis Mount, Screw

Chassis Mount

SP4

4

SILICON

-40°C~150°C TJ

Bulk

1997

e1

yes

Active

1 (Unlimited)

10

EAR99

TIN SILVER COPPER

AVALANCHE RATED

416W

UPPER

UNSPECIFIED

10

R-XUFM-X10

2

ENHANCEMENT MODE

416W

ISOLATED

10 ns

2 N-Channel (Half Bridge)

SWITCHING

100m Ω @ 21A, 10V

3.9V @ 3mA

6761pF @ 25V

273nC @ 10V

13ns

800V

35 ns

83 ns

42A

30V

0.1Ohm

168A

800V

670 mJ

METAL-OXIDE SEMICONDUCTOR

Standard

No

RoHS Compliant

-

-

-

-

-

-

-
APTC60HM45SCTG

Microsemi Corporation

IN PRODUCTION (Last Updated: 2 weeks ago)

36 Weeks

Chassis Mount, Screw

Chassis Mount

SP4

4

SILICON

-40°C~150°C TJ

Bulk

1997

-

-

Active

1 (Unlimited)

14

EAR99

-

AVALANCHE RATED, ULTRA-LOW RESISTANCE

250W

UPPER

UNSPECIFIED

14

-

4

ENHANCEMENT MODE

250W

ISOLATED

21 ns

4 N-Channel (H-Bridge)

SWITCHING

45m Ω @ 22.5A, 10V

3.9V @ 3mA

7200pF @ 25V

150nC @ 10V

30ns

600V

45 ns

100 ns

49A

20V

-

130A

600V

1900 mJ

METAL-OXIDE SEMICONDUCTOR

Super Junction

-

RoHS Compliant

CoolMOS™

Not Qualified

-

-

-

-

APTC80A10SCTG vs APTC60HM45SCTG
APTC60HM70RT3G

Microsemi Corporation

-

36 Weeks

Screw

-

SP3

3

-

-40°C~150°C TJ

Bulk

1999

-

-

Active

1 (Unlimited)

-

EAR99

-

-

250W

-

-

-

-

4

-

250W

-

21 ns

4 N-Channel (H-Bridge) Bridge Rectifier

-

70m Ω @ 39A, 10V

3.9V @ 2.7mA

7000pF @ 25V

259nC @ 10V

30ns

600V

84 ns

283 ns

39A

20V

-

-

-

-

METAL-OXIDE SEMICONDUCTOR

Standard

No

RoHS Compliant

CoolMOS™

-

FET General Purpose Power

-

-

-

APTC80A10SCTG vs APTC60HM70RT3G
APTC80A15T1G

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

SP1

1

SILICON

-40°C~150°C TJ

Bulk

2007

e1

-

Obsolete

1 (Unlimited)

12

-

TIN SILVER COPPER

AVALANCHE RATED

277W

UPPER

UNSPECIFIED

12

-

2

ENHANCEMENT MODE

277W

ISOLATED

-

2 N-Channel (Half Bridge)

SWITCHING

150m Ω @ 14A, 10V

3.9V @ 2mA

4507pF @ 25V

180nC @ 10V

-

800V

-

-

28A

30V

-

-

800V

670 mJ

METAL-OXIDE SEMICONDUCTOR

Standard

-

RoHS Compliant

-

Not Qualified

FET General Purpose Power

NOT SPECIFIED

unknown

NOT SPECIFIED

APTC80A10SCTG vs APTC80A15T1G